Abstract: A device for depositing layers on flat substrates includes a susceptor which can be heated by a heating device. The substrates and cover plates enclosing same are arranged on an upper face of the susceptor facing a process chamber. The cover plates include inner cover plates, each of which forms an edge adjoining a substrate edge facing the center of the susceptor. The inner cover plates are arranged about the center of the susceptor in the circumferential direction, and adjacent ones of the inner cover plates adjoin each other at a separation joint. The separation joint is arranged at an angle ? to a line which extends through the center of the susceptor and the center of one of the substrates in a radial direction.

Abstract: A susceptor assembly, which is situated in a reactor housing, has at least one wide side plane that faces a process chamber, at least one pocket, and a carrying element that lies in the at least one pocket, for carrying and handling a substrate. An upper face of the carrying element is adjacent to a limiting face of a recess in which the substrate is arranged. A section of the limiting face which runs along a cylinder inner lateral face merges into the upper face of the carrying element, forming a rounded edge or chamfer. To reduce the growth of parasitic deposits on an inner edge of the carrying element, the section of the limiting face which runs along the cylinder inner lateral face has a height which is greater than the material thickness of the substrate, and the radius of the rounded edge is greater than 0.4 mm.

Abstract: A device for depositing layers on flat substrates includes a susceptor which can be heated by a heating device. The substrates and cover plates enclosing same are arranged on an upper face of the susceptor facing a process chamber. The cover plates include inner cover plates, each of which forms an edge adjoining a substrate edge facing the center of the susceptor. The inner cover plates are arranged about the center of the susceptor in the circumferential direction, and adjacent ones of the inner cover plates adjoin each other at a separation joint. The separation joint is arranged at an angle ? to a line which extends through the center of the susceptor and the center of one of the substrates in a radial direction.

Abstract: A gas inlet element for a CVD reactor includes a cylindrical main body, which together with an outer wall, forms a gas outlet face. The outer wall surrounds at least one gas distribution chamber. A plurality of gas outlet openings originating in the gas distribution chamber open out into the gas outlet face. A cooling device includes a plurality of cooling channels running adjacently but separately in the outer wall, and the gas outlet openings extend between the cooling channels.

Abstract: A device for depositing layers on flat substrates includes a susceptor which can be heated by a heating device. The substrates and cover plates enclosing same are arranged on an upper face of the susceptor facing a process chamber. The cover plates include inner cover plates, each of which forms an edge adjoining a substrate edge facing the center of the susceptor. The inner cover plates are arranged about the center of the susceptor in the circumferential direction, and adjacent ones of the inner cover plates adjoin each other at a separation joint. The separation joint is arranged at an angle ? to a line which extends through the center of the susceptor and the center of one of the substrates in a radial direction.

Abstract: A susceptor assembly, which is situated in a reactor housing, has at least one wide side plane that faces a process chamber, at least one pocket, and a carrying element that lies in the at least one pocket, for carrying and handling a substrate. An upper face of the carrying element is adjacent to a limiting face of a recess in which the substrate is arranged. A section of the limiting face which runs along a cylinder inner lateral face merges into the upper face of the carrying element, forming a rounded edge or chamfer. To reduce the growth of parasitic deposits on an inner edge of the carrying element, the section of the limiting face which runs along the cylinder inner lateral face has a height which is greater than the material thickness of the substrate, and the radius of the rounded edge is greater than 0.4 mm.