Abstract: An integrated circuit includes FDSOI-type MOS transistors formed inside and on top of a semiconductor layer resting on an insulating layer. The transistors include a logic MOS transistor of a first conductivity type, a logic MOS transistor of a second conductivity type, and an analog MOS transistor of the first conductivity type, A gate stack of the logic transistors successively includes a gate insulator layer, a first titanium nitride layer, a lanthanum layer, and a second titanium nitride layer. A gate stack of the analog transistor includes the gate insulator layer, the lanthanum layer and the second titanium nitride layer but not the first titanium nitride layer.

Abstract: A process for forming a wire portion in an integrated electronic circuit includes epitaxially growing the wire portion on a side surface of a seed layer portion (11, 12). Cross-sectional dimensions of the wire portion correspond to a thickness of the seed layer portion and to a duration of the growing step. The seed layer portion is then selectively removed while the wire portion is retained fixedly on the circuit. Afterwards, heating of the circuit can cause the wire portion becoming rounded in cross-section. The wire portion obtained may be about 10 nanometers in diameter. It may be used for forming a channel of a MOS transistor devoid of short channel effect.

Abstract: A process for forming a wire portion in an integrated electronic circuit includes epitaxially growing the wire portion on a side surface of a seed layer portion (11, 12). Cross-sectional dimensions of the wire portion correspond to a thickness of the seed layer portion and to a duration of the growing step. The seed layer portion is then selectively removed while the wire portion is retained fixedly on the circuit. Afterwards, heating of the circuit can cause the wire portion becoming rounded in cross-section. The wire portion obtained may be about 10 nanometers in diameter. It may be used for forming a channel of a MOS transistor devoid of short channel effect.