Patents by Inventor Benjamin F. Fieselmann

Benjamin F. Fieselmann has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 5496583
    Abstract: The present invention relates to the production of hydrogen fluoride dopant source gases for use in the production of conductive coatings on a substrate. More specifically, a fluorocarbon source gas is decomposed in the presence of oxygen to yield HF which is passed to a deposition furnace wherein a fluoride doped metal oxide coated glass substrate is prepared.
    Type: Grant
    Filed: August 29, 1994
    Date of Patent: March 5, 1996
    Assignee: Amoco/Enron Solar
    Inventors: Kai W. Jansen, Benjamin F. Fieselmann
  • Patent number: 5358755
    Abstract: Amorphous hydrogenated silicon-carbon alloys having particular usefulness in the preparation of photovoltaic devices, such as solar cells, with improved properties, such as high open circuit voltage with high fill factor and improved blue response, and stability, are provided by the process of depositing the alloy on a substrate maintained at a relatively low temperature below about 260.degree. C. in a vapor deposition chamber, and introducing a gaseous mixture comprising at least one compound having the formula (SiX.sub.3).sub.3 CX.sup.1 wherein each X and X.sup.1 is selected from the group consisting of hydrogen and halogen, and a high proportion of hydrogen, in a ratio by volume of from about 50 parts to about 2000 parts hydrogen to 1 part of (SiX.sub.3).sub.3 CX.sup.1 compound, under deposition conditions of low excitation power density of less than about 50 mw/cm.sup.2, and high pressure of more than about 0.1 torr.
    Type: Grant
    Filed: August 13, 1993
    Date of Patent: October 25, 1994
    Assignee: Amoco Corporation
    Inventors: Yuan-Min Li, Benjamin F. Fieselmann
  • Patent number: 4777023
    Abstract: A method for preparing a hydride containing at least two different Group 4A atoms wherein at least one of the Group 4A atoms is silicon or germanium. The method includes the steps of reacting an alkali metal and a macrocyclic compound with a silicon or germanium hydride to form a salt. The salt is then reacted with a Group 4A halide. The resulting hydrides are useful as deposition feedstock material for use in the formation of hydrogenated amorphous silicon alloy in the fabrication of photovoltaic devices and other semiconductor devices.
    Type: Grant
    Filed: February 18, 1986
    Date of Patent: October 11, 1988
    Assignee: Solarex Corporation
    Inventor: Benjamin F. Fieselmann
  • Patent number: 4341741
    Abstract: Residues are formed in the carbonylation of esters or ethers, particularly in the production of acetic anhydride or ethylidene diacetate. Such residues contain noble metal, typically rhodium, used as a catalyst, which must be recovered before the residues can be disposed of. The rhodium values are freed from the residues by treatment with amines, preferably primary aliphatic amines and/or hydrazine, thereby enabling the rhodium to be extracted by subsequent contact with an aqueous halogen acid.
    Type: Grant
    Filed: March 6, 1981
    Date of Patent: July 27, 1982
    Assignee: The Halcon SD Group, Inc.
    Inventors: Walter C. Davidson, Benjamin F. Fieselmann