Patents by Inventor Benjamin F. Froemming
Benjamin F. Froemming has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20110219160Abstract: An apparatus and method for exchanging data between devices. An interface between at least two devices features a serial clock line coupled to each device and a bidirectional serial data line coupled to each device. A delay relative to the clock signal is added to an edge of an output enable signal to prevent a collision between devices when control of the data line is switched. Multiple masters and slaves may be connected to the interface.Type: ApplicationFiled: May 16, 2011Publication date: September 8, 2011Applicant: ATMEL CORPORATIONInventors: Emil Lambrache, Benjamin F. Froemming
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Patent number: 7752427Abstract: A stack pointer is copied to a stack pointer base to debug stack underflow. A move instruction, used to initialize the stack pointer, is modified to additionally copy the stack pointer to a stack pointer base register. During a course of execution in a single context, the stack pointer base sticks to the initial base value while the stack pointer is altered by a succession of PUSH and POP instructions. By monitoring for equivalence in the stack pointer and the stack pointer base values, a balanced number of PUSH and POP instructions is detected. If an equal number of PUSH and POP instructions is detected and an additional POP instruction is programmed, a stack underflow condition exists, an exception condition signaled, and exception flag produced. The exception condition allows the stack to be protected from an excessive POP instruction retrieving data out of context and subsequent loss of stack data.Type: GrantFiled: December 9, 2005Date of Patent: July 6, 2010Assignee: Atmel CorporationInventors: Emil Lambrache, Benjamin F. Froemming
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Patent number: 7710814Abstract: Separate read and write ports in a memory system allow simultaneous access to a memory cell array by read and write operations. A single cycle operation of a central processing unit coupled to a memory array depends on a memory access capability providing simultaneous reading and writing to different locations. A pair of pull-down transistor stacks connected to memory cell latch loops allows a single selected pull-down stack of the pair to toggle a memory cell latch loop to a desired data content without any requirement for a precharge scheme. A single pull-down stack of transistors connected to a memory cell latch loop provides a read port with low input loading. A sense amplifier provides a mid-supply-level precharging capability provided by a feedback device within a front-end inversion stage. When not in a feedback mode, the front-end inversion stage cascaded with a second inversion stage provides a rapid read response.Type: GrantFiled: October 29, 2007Date of Patent: May 4, 2010Assignee: Atmel CorporationInventors: Emil Lambrache, Benjamin F. Froemming
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Publication number: 20090319760Abstract: An n architecture for implementing an instruction pipeline within a CPU comprises an arithmetic logic unit (ALU), an address arithmetic unit (AAU), a program counter (PC), a read-only memory (ROM) coupled to the program counter, to an instruction register, and to an instruction decoder coupled to the arithmetic logic unit. A random access memory (RAM) is coupled to the instruction decoder, to the arithmetic logic unit, and to a RAM address register.Type: ApplicationFiled: August 27, 2009Publication date: December 24, 2009Inventors: Benjamin F. Froemming, Emil Lambrache
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Publication number: 20080259712Abstract: Separate read and write ports in a memory system allow simultaneous access to a memory cell array by read and write operations. A single cycle operation of a central processing unit coupled to a memory array depends on a memory access capability providing simultaneous reading and writing to different locations. A pair of pull-down transistor stacks connected to memory cell latch loops allows a single selected pull-down stack of the pair to toggle a memory cell latch loop to a desired data content without any requirement for a precharge scheme. A single pull-down stack of transistors connected to a memory cell latch loop provides a read port with low input loading. A sense amplifier provides a mid-supply-level precharging capability provided by a feedback device within a front-end inversion stage. When not in a feedback mode, the front-end inversion stage cascaded with a second inversion stage provides a rapid read response.Type: ApplicationFiled: October 29, 2007Publication date: October 23, 2008Applicant: ATMEL CORPORATIONInventors: Emil Lambrache, Benjamin F. Froemming
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Patent number: 7437616Abstract: The same microcontroller chip is configured to be either a Target version or a Link version of a microcontroller. The Target version runs an application program. To debug the Target microcontroller, the Link version of the microcontroller functions as a master debug microcontroller to the slave Target microcontroller running the application program. The Link microcontroller runs an interface translator program between a Host computer that runs a debug program, and the Target microcontroller. The Link microcontroller communicates with the Target microcontroller using a fast, 2-wire interface. The Link microcontroller communicates with the Host computer through a general purpose interface.Type: GrantFiled: December 15, 2005Date of Patent: October 14, 2008Assignee: Atmel CorporationInventors: Emil Lambrache, Benjamin F. Froemming, Andrew K. Au
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Patent number: 7397723Abstract: Separate read and write ports in a memory system allow simultaneous access to a memory cell array by read and write operations. A single cycle operation of a central processing unit coupled to a memory array depends on a memory access capability providing simultaneous reading and writing to different locations. A pair of pull-down transistor stacks connected to memory cell latch loops allows a single selected pull-down stack of the pair to toggle a memory cell latch loop to a desired data content without any requirement for a precharge scheme. A single pull-down stack of transistors connected to a memory cell latch loop provides a read port with low input loading. A sense amplifier provides a mid-supply-level precharging capability provided by a feedback device within a front-end inversion stage. When not in a feedback mode, the front-end inversion stage cascaded with a second inversion stage provides a rapid read response.Type: GrantFiled: April 20, 2007Date of Patent: July 8, 2008Assignee: Atmel CorporationInventors: Emil Lambrache, Benjamin F. Froemming
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Patent number: 7304904Abstract: Separate read and write ports in a memory system allow simultaneous access to a memory cell array by read and write operations. A single cycle operation of a central processing unit coupled to a memory array depends on a memory access capability providing simultaneous reading and writing to different locations. A pair of pull-down transistor stacks connected to memory cell latch loops allows a single selected pull-down stack of the pair to toggle a memory cell latch loop to a desired data content without any requirement for a precharge scheme. A single pull-down stack of transistors connected to a memory cell latch loop provides a read port with low input loading. A sense amplifier provides a mid-supply-level precharging capability provided by a feedback device within a front-end inversion stage. When not in a feedback mode, the front-end inversion stage cascaded with a second inversion stage provides a rapid read response.Type: GrantFiled: April 20, 2007Date of Patent: December 4, 2007Assignee: Atmel CorporationInventors: Emil Lambrache, Benjamin F. Froemming
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Patent number: 7224635Abstract: Separate read and write ports in a memory system allow simultaneous access to a memory cell array by read and write operations. A single cycle operation of a central processing unit coupled to a memory array depends on a memory access capability providing simultaneous reading and writing to different locations. A pair of pull-down transistor stacks connected to memory cell latch loops allows a single selected pull-down stack of the pair to toggle a memory cell latch loop to a desired data content without any requirement for a precharge scheme. A single pull-down stack of transistors connected to a memory cell latch loop provides a read port with low input loading. A sense amplifier provides a mid-supply-level precharging capability provided by a feedback device within a front-end inversion stage. When not in a feedback mode, the front-end inversion stage cascaded with a second inversion stage provides a rapid read response.Type: GrantFiled: May 17, 2005Date of Patent: May 29, 2007Assignee: Atmel CorporationInventors: Emil Lambrache, Benjamin F. Froemming
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Patent number: 7082481Abstract: A serial peripheral interface apparatus has a second parallel write buffer to load in a subsequent data byte while a current data byte is being transferred serially through the apparatus instead of waiting for the previous data byte to complete the serial transfer and other commands to avoid write collision. The subsequent data byte is transferred into the second parallel write buffer only after the software driven CPU examines the status of a load enable and the status of a write buffer provided by a finite state machine controller. The software driven CPU orders the subsequent data byte to be transferred into the second parallel write buffer when the load enable is favorable and the second parallel write buffer is available. The load enable becomes favorable when a bit counter counts the first half of the transfer of the previous data set. Thus, the second parallel write buffer avoids the stretching the master clock and improves data throughput of the system.Type: GrantFiled: November 25, 2003Date of Patent: July 25, 2006Assignee: Atmel CorporationInventors: Emil Lambrache, Benjamin F. Froemming