Patents by Inventor Benjamin Gérard Pierre Damilano

Benjamin Gérard Pierre Damilano has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Thin semiconductor GaInN layer, method for preparing same, light-emitting diode comprising said layer and illumination device
    Patent number: 6730943
    Abstract: Thin, single semi conducting layer of GaInN, possibly containing a small percentage of arsenic, phosphorus or antimony, the said layer emitting at least two visible lights with determined colors which can be combined, particularly to obtain white light. Method for preparing this layer. Light emitting diode (LED), particularly a LED emitting white light comprising such a thin layer in its active zone, and lighting device comprising such a diode.
    Type: Grant
    Filed: October 11, 2002
    Date of Patent: May 4, 2004
    Assignee: Centre National de la Recherche Scientifique
    Inventors: Jean Claude Massies, Nicolas Pierre Grandjean, Benjamin Gérard Pierre Damilano
  • Thin semiconductor gainn layer, method for preparing same, light-emitting diode comprising said layer and illumination device
    Publication number: 20030092209
    Abstract: Thin, single semi conducting layer of GaInN, possibly containing a small percentage of arsenic, phosphorus or antimony, the said layer emitting at least two visible lights with determined colours which can be combined, particularly to obtain white light.
    Type: Application
    Filed: October 11, 2002
    Publication date: May 15, 2003
    Inventors: Jean Claude Massies, Nicolas Pierre Grandjean, Benjamin Gerard Pierre Damilano
  • Stacking of GaN or GaInN quantum dots on a silicon substrate, their preparation procedure electroluminescent device and lighting device comprising these stackings
    Patent number: 6445009
    Abstract: A device includes a silicon substrate provided with a coating including at least one stacking constituted by a plane of GaN or GaInN quantum dots emitting visible light at room temperature in a respective layer of AIN or GaN. The method of making the device is also disclosed. The device can be incorporated in electroluminescent devices and exchange devices, emitting white light in particular.
    Type: Grant
    Filed: August 8, 2000
    Date of Patent: September 3, 2002
    Assignee: Centre National de la Recherche Scientifique
    Inventors: Nicolas Pierre Grandjean, Jean Massies, Benjamin Gérard Pierre Damilano, Fabrice Semond, Mathieu Leroux