Patents by Inventor Benjamin H. Kwan

Benjamin H. Kwan has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Aluminum alloy/silicon-chromium sandwich schottky diode
    Patent number: 5296406
    Abstract: A Schottky diode is presented which has reduced minority carrier injection and reduced diffusion of the metallization into the semiconductor. These improvements are obtained by interposing a layer comprising a mixture of silicon and chromium between the anode metallization layer and the semiconductor in a Schottky diode. The layer including chromium acts an effective barrier against the diffusion of the metallization layer into the semiconductor, and at the same time reduces the amount of minority carrier injection into the substrate. The layer including chromium requires no addition photolithograpic masks because it can be plasma etched using the metallization layer as a mask after that layer has been patterned.
    Type: Grant
    Filed: July 7, 1993
    Date of Patent: March 22, 1994
    Assignee: Linear Technology Corporation
    Inventors: John E. Readdie, Benjamin H. Kwan, Jeng Chang
  • Aluminum alloy/silicon chromium sandwich schottky diode
    Patent number: 5254869
    Abstract: A Schottky diode is presented which has reduced minority carrier injection and reduced diffusion of the metallization into the semiconductor. These improvements are obtained by interposing a layer comprising a mixture of silicon and chromium between the anode metallization layer and the semiconductor in a Schottky diode. The layer including chromium acts an effective barrier against the diffusion of the metallization layer into the semiconductor, and at the same time reduces the amount of minority carrier injection into the substrate. The layer including chromium requires no addition photolithograpic masks because it can be plasma etched using the metallization layer as a mask after that layer has been patterned.
    Type: Grant
    Filed: June 28, 1991
    Date of Patent: October 19, 1993
    Assignee: Linear Technology Corporation
    Inventors: John E. Readdie, Benjamin H. Kwan, Jeng Chang