Abstract: A method for structuring an insulating layer on a semiconductor wafer includes providing a semiconductor wafer with a top, a bottom and includes multiple solar cell stacks, wherein each solar cell stack is a Ge substrate, which forms the bottom of the semiconductor wafer, a Ge subcell and at least two III-V subcells, in the above order, and at least one passage opening, which extends from the top to the bottom of the semiconductor wafer and has a connected side wall, an insulating layer two-dimensionally deposited on the top of the semiconductor wafer, on the side wall of the passage opening and/or on the bottom of the semiconductor wafer, and the deposition of an etch-resistant filling material by means of a printing process on an area of the top which include the passage opening, and into the passage opening.

Abstract: A method for structuring an insulating layer on a semiconductor wafer, at least comprising the steps of: Provision of a semiconductor wafer with a top, a bottom and comprising multiple solar cell stacks, wherein each solar cell stack is a Ge substrate, which forms the bottom of the semiconductor wafer, a Ge subcell and at least two III-V subcells, in the above order, and at least one passage opening, which extends from the top to the bottom of the semiconductor wafer and has a connected side wall, an insulating layer two-dimensionally deposited on the top of the semiconductor wafer, on the side wall of the passage opening and/or on the bottom of the semiconductor wafer, and the deposition of an etch-resistant filling material by means of a printing process on an area of the top which comprises the passage opening, and into the passage opening.

Abstract: A liquid composition for improving the facial contour and shape of the human or animal face by injection, the liquid composition comprising water and at least one of the following components A, B and C: at least one component A, which leads to an osmotic concentration in the range from 500 to 5000 mOsm in the liquid composition, at least one high viscosity component B, which leads to a viscosity of the liquid composition in the range from 10 to 1500 mPas, at least one micro-particles component C, comprising micro-particles with an average particle size not larger than 0.25 mm, preferably in the range of 0.001 mm to 0.25 mm, and optionally comprising a local anesthetic compound D.

Abstract: A method for structuring an insulating layer on a semiconductor wafer, at least comprising the steps of: Provision of a semiconductor wafer with a top, a bottom and comprising multiple solar cell stacks, wherein each solar cell stack is a Ge substrate, which forms the bottom of the semiconductor wafer, a Ge subcell and at least two III-V subcells, in the above order, and at least one passage opening, which extends from the top to the bottom of the semiconductor wafer and has a connected side wall, an insulating layer two-dimensionally deposited on the top of the semiconductor wafer, on the side wall of the passage opening and/or on the bottom of the semiconductor wafer, and the deposition of an etch-resistant filling material by means of a printing process on an area of the top which comprises the passage opening, and into the passage opening.

Abstract: A stacked multi-junction solar cell with a metallization comprising a multilayer system, wherein the multi-junction solar cell has a germanium substrate forming a bottom side of the multi-junction solar cell, a germanium subcell, and at least two III-V subcells, the multilayer system of the metallization has a first layer, comprising gold and germanium, a second layer comprising titanium, a third layer, comprising palladium or nickel or platinum, with a layer thickness, and at least one metallic fourth layer, and the multilayer system of the metallization covers at least one first and second surface section and is integrally connected to the first and second surface section, wherein the first surface section is formed by the dielectric insulation layer and the second surface section is formed by the germanium substrate or by a III-V layer.

Abstract: A protection method for through-holes of a semiconductor wafer having the steps: providing a semiconductor wafer, and comprising a plurality of solar cell stacks, wherein each solar cell stack has a Ge substrate forming a bottom side of the semiconductor wafer, a Ge subcell, and at least two III-V subcells in the order mentioned, as well as at least one through-hole, extending from the top side to the bottom side of the semiconductor wafer, with a continuous side wall and a circumference that is oval in cross section; applying a photoresist layer to a top side of the semiconductor wafer and to at least one region of the side wall of the through-hole, said region adjoining the top side, and applying an organic filler material by means of a printing process to a region of the top side, said region comprising the through-hole, and into the through-hole.

Abstract: A stacked multi-junction solar cell with a metallization comprising a multilayer system, wherein the multi-junction solar cell has a germanium substrate forming a bottom side of the multi-junction solar cell, a germanium subcell, and at least two III-V subcells, the multilayer system of the metallization has a first layer, comprising gold and germanium, a second layer comprising titanium, a third layer, comprising palladium or nickel or platinum, with a layer thickness, and at least one metallic fourth layer, and the multilayer system of the metallization covers at least one first and second surface section and is integrally connected to the first and second surface section, wherein the first surface section is formed by the dielectric insulation layer and the second surface section is formed by the germanium substrate or by a III-V layer.

Abstract: A protection method for through-holes of a semiconductor wafer having the steps: providing a semiconductor wafer, and comprising a plurality of solar cell stacks, wherein each solar cell stack has a Ge substrate forming a bottom side of the semiconductor wafer, a Ge subcell, and at least two III-V subcells in the order mentioned, as well as at least one through-hole, extending from the top side to the bottom side of the semiconductor wafer, with a continuous side wall and a circumference that is oval in cross section; applying a photoresist layer to a top side of the semiconductor wafer and to at least one region of the side wall of the through-hole, said region adjoining the top side, and applying an organic filler material by means of a printing process to a region of the top side, said region comprising the through-hole, and into the through-hole.

Abstract: A metallization method for a semiconductor wafer having at least the steps: providing a semiconductor wafer having a top side and a bottom side and comprising a plurality of solar cell stacks, wherein each solar cell stack has a Ge substrate forming the bottom side of the semiconductor wafer, a Ge subcell, and at least two III-V subcells in the order mentioned, as well as at least one through-hole, extending from the top side to the bottom side of the semiconductor wafer, with a continuous side wall and a circumference that is oval in cross section, applying a photoresist layer in certain areas as a resist pattern by means of a printing method to the top side and/or to bottom side of the semiconductor wafer, applying a metal layer in a planar manner to exposed regions of the surface of the semiconductor wafer.

Abstract: A liquid composition for improving the facial contour and shape of the human or animal face by injection, the liquid composition comprising water and at least one of the following components A, B and C: at least one component A, which leads to an osmotic concentration in the range from 500 to 5000 mOsm in the liquid composition, at least one high viscosity component B, which leads to a viscosity of the liquid composition in the range from 10 to 1500 mPas, at least one micro-particles component C, comprising micro-particles with an average particle size not larger than 0.25 mm, preferably in the range of 0.001 mm to 0.25 mm, and optionally comprising a local anesthetic compound D.