Abstract: A method of tuning a resonant frequency of a nano-electromechanical systems (NEMS) drum device is performed by applying a gate voltage between the drum membrane [100] and a back gate [104] to alter the resonant frequency of the membrane to a desired frequency; photoionizing the drum membrane with a laser to detune the membrane resonant frequency to a ground state frequency; and releasing the gate voltage to set the membrane to the desired resonant frequency. The method provides the basis for various applications including NEMS memory and photodetection techniques. The NEMS device may be implemented as a graphene/hBN membrane [100] suspended on a SiO2 layer [102] deposited on a Si substrate [104].

Abstract: A method of timing a resonant frequency of a nanoelectromechanical systems (NEMS) drum device is performed by applying a gate voltage between the drum membrane [100] and a back gate [104] to alter the resonant frequency of the membrane to a desired frequency; photoionizing the drum membrane with a laser to detune the membrane resonant frequency to a ground state frequency; and releasing the gate voltage to set the membrane to the desired resonant frequency. The method provides the basis for various applications including NEMS memory and photodetection techniques. The NEMS device may be implemented as a graphene/hBN membrane [100] suspended on a Si02 layer [102] deposited on a Si substrate [104].

Abstract: A thermo-mechanical resonating microbolometer has a graphene absorber suspended above a metallic silicon substrate to form a mechanical resonator. Microelectronic circuitry electrically connected to the graphene resonator and the metallic silicon substrate drives electronically the motion of the graphene absorber. Shifts in the mechanical resonant frequency of the graphene layer due to the absorption of incident radiation is measured electronically or using optical interferometry. A bolometer sensor array may be fabricated using such graphene microbolometer elements.

Abstract: A quantum emitter device is composed of a hole milled in a layer of hexagonal boron nitride (hBN) on a substrate made of silicon dioxide. The hole preferably has a side wall angle 1.1°±0.28° from the horizontal, has an oval shape with minor axis 516 nm±20 nm and major axis 600 nm±20 nm, and/or has a depth 4 nm±1 nm. The hBN layer preferably has a total thickness of 5-10 nm. The holes may be fabricated using a gallium focused ion beam, a helium focused ion beam, electron beam directed etching, or photolithography and reactive ion etch (RIE) with sidewall tapering.

Abstract: A quantum emitter device is composed of a hole milled in a layer of hexagonal boron nitride (hBN) on a substrate made of silicon dioxide. The hole preferably has a side wall angle 1.1°±0.28° from the horizontal, has an oval shape with minor axis 516 nm±20 nm and major axis 600 nm±20 nm, and/or has a depth 4 nm±1 nm. The hBN layer preferably has a total thickness of 5-10 nm. The holes may be fabricated using a gallium focused ion beam, a helium focused ion beam, electron beam directed etching, or photolithography and reactive ion etch (RIE) with sidewall tapering.

Abstract: A thermo-mechanical resonating microbolometer has a graphene absorber suspended above a metallic silicon substrate to form a mechanical resonator. Microelectronic circuitry electrically connected to the graphene resonator and the metallic silicon substrate drives electronically the motion of the graphene absorber. Shifts in the mechanical resonant frequency of the graphene layer due to the absorption of incident radiation is measured electronically or using optical interferometry. A bolometer sensor array may be fabricated using such graphene microbolometer elements.

Abstract: Disclosed is a method of preparing a support structure suitable for use, e.g., in microscopic studies, comprising a free standing atomically thin film (e.g. graphene) suspended across an opening in the support structure. The method in one aspect comprises the steps of preparing a thin film which is an atomically thin film (e.g., graphene) on a surface of a solid substrate to form a graphene-layered substrate; attaching the graphene layer to a hole-containing support mesh; removing the solid support, thereby transferring the graphene layer from the substrate to the carbonaceous hole-containing layer on the support mesh; and then removing contaminants to obtain said structure. In another aspect, the present method does not involve a transfer, but comprises a lithography and etching process in which the atomically thin layer is applied to a support which is marked with a lithographic pattern and selectively etched, leaving the free standing film.