Abstract: A self-aligned photoresist process for selectively covering a pattern on a substrate with photoresist without using a mask or needing an alignment step. It may be used when the pattern to be covered or not covered has a much different reflectivity than the non-pattern areas. A photoresist layer is deposited over the substrate and exposed to a flood beam. The higher reflectivity regions reflect much more exposing radiation and cause increased exposure in the regions overlying the higher reflectivity pattern. Upon development, the more exposed regions (or in the case of a negative resist, the less exposed regions) preferentially develop away, leaving a resist pattern corresponding with the reflective pattern and aligned therewith. This process can be used, for example, to cover a substrate with resist everywhere except at metallized areas.

Abstract: Resist images are hardened so that they are flow resistant at elevated temperatures by coating the image with a layer of a porous metal or metal oxide.

Abstract: The cross-sectional profile which is produced upon development of a layer of alkali soluble resin-diazo ketone photoresist is modified by treating the layer with a solvent or solvent mixture which is different from but miscible with the solvent or solvent mixture used to form the resist layer. The treating solvent is believed to dilute the resist solvent in a surface layer portion of the resist thereby modifying the alkaline developer solubility of this portion. Undercut resist profiles may be obtained by this method with normal optical exposure of the resist.