Abstract: Lu-containing compositions comprising a particle coated by a Lu-containing film are disclosed. The process of depositing the Lu-containing film on the particle is also disclosed.

Abstract: An improved hydrogen generation system and method for using the same are provided. The system includes an HDS unit configured to remove sulfur, a first and second pre-reformers configured to pre-reform a process gas and fuel gas, respectively, a first and second heat exchangers configured to dry and heat the pre-reformed fuel gas, respectively, and a reformer configured to produce a syngas and flue gas. The method includes using a process stream selected from the group consisting of air, PSA off-gas, hydrocarbon gas, and combinations thereof to dry the fuel gas and using a process stream selected from the group consisting of the flue gas, the syngas, and combinations thereof to heat the dry fuel gas. The second pre-reformer is a low-pressure pre-reformer, so that the heat contents of the fuel gas is increased through converting heavy hydrocarbons in the fuel gas to CO and H2 by the second pre-reformer.

Abstract: An improved hydrogen generation system and method for using the same are provided. The system includes an HDS unit configured to remove sulfur, a first and second pre-reformers configured to pre-reform a process gas and fuel gas, respectively, a first and second heat exchangers configured to dry and heat the pre-reformed fuel gas, respectively, and a reformer configured to produce a syngas and flue gas. The method includes using a process stream selected from the group consisting of air, PSA off-gas, hydrocarbon gas, and combinations thereof to dry the fuel gas and using a process stream selected from the group consisting of the flue gas, the syngas, and combinations thereof to heat the dry fuel gas. The second pre-reformer is a low-pressure pre-reformer, so that the heat contents of the fuel gas is increased through converting heavy hydrocarbons in the fuel gas to CO and H2 by the second pre-reformer.

Abstract: An improved hydrogen generation system and method for using the same are provided. The system includes an HDS unit configured to remove sulfur from a process gas and a fuel gas, a pre-reformer configured to convert heavy hydrocarbons in the process gas and the fuel gas to methane, a first heat exchanger configured to dry the pre-reformed fuel gas, a second heat exchanger configured to heat the dry pre-reformed fuel gas, and a reformer configured to produce a syngas and flue gas.

Abstract: A carbon molecular sieve (CMS) membrane is made by pyrolyzing a polymeric precursor membrane in a pyrolysis atmosphere containing a sulfur-containing compound.

Abstract: Atomic layer or cyclic plasma etching chemistries and processes to etch films are disclosed. Films include Si, Ti, Ta, W, Al, Pd, Ir, Co, Fe, B, Cu, Ni, Pt, Ru, Mn, Mg, Cr, Au, alloys thereof, oxides thereof, nitrides thereof, and combinations thereof.

Abstract: A carbon molecular sieve (CMS) membrane is made by pyrolyzing a polymeric precursor membrane in a pyrolysis atmosphere containing a sulfur-containing compound.

Abstract: A carbon molecular sieve (CMS) membrane is made by pyrolyzing a polymeric precursor membrane in a pyrolysis atmosphere containing a sulfur-containing compound.

Abstract: Disclosed are homoleptic diazabutadiene nickel precursors used for the vapor deposition of nickel-containing films. The precursors have the general formula Ni(R-DAD)2, wherein R-DAD stands for substituted 1,4-diazabuta-1,3-diene ligands. The sole presence of the Ni—N bonds was also considered to avoid too high intrusion of other elements, such as carbon, into the nickel-containing films. The flexibility of the Ni—N bond in terms of film deposition also allows using the molecules for nickel, nickel-nitride, nickel-carbonitride, nickel oxide or any other type of nickel-containing films. The nickel-containing film depositions can be carried out by thermal and/or plasma-enhanced CVD, ALD, and pulse CVD or any other type of depositions methods.

Abstract: Disclosed are smart canisters for use in the materials industry. The smart canisters include sensors and communication devices that allow users to continuously monitor various physical and chemical properties of the product insider the canisters. For a variety of products that have limited stability and tend to decompose over time, variations in product properties can adversely impact the process in which the material is used. The smart canister can alert the user, in real time, when the product is starting to deviate from pre-set functional parameters.

Abstract: Atomic layer or cyclic plasma etching chemistries and processes to etch films are disclosed. Films include Si, Ti, Ta, W, Al, Pd, Ir, Co, Fe, B, Cu, Ni, Pt, Ru, Mn, Mg, Cr, Au, alloys thereof, oxides thereof, nitrides thereof, and combinations thereof.

Abstract: Disclosed are homoleptic diazabutadiene nickel precursors used for the vapor deposition of nickel-containing films. The precursors have the general formula Ni(R-DAD)2, wherein R-DAD stands for substituted 1,4-diazabuta-1,3-diene ligands. The sole presence of the Ni—N bonds was also considered to avoid too high intrusion of other elements, such as carbon, into the nickel-containing films. The flexibility of the Ni—N bond in terms of film deposition also allows using the molecules for nickel, nickel-nitride, nickel-carbonitride, nickel oxide or any other type of nickel-containing films. The nickel-containing film depositions can be carried out by thermal and/or plasma-enhanced CVD, ALD, and pulse CVD or any other type of depositions methods.

Abstract: Methods and compositions for depositing metal films are described herein. In general, the disclosed methods utilize precursor compounds comprising gold, silver or copper. More specifically, the disclosed precursor compounds utilize neutral ligands derived from ethylene or acetylene.

Abstract: A chemical storage device and a method for monitoring chemical usage are described herein. The device and disclosed method utilize a chemical storage canister and a load cell integrated into one transportable unit. The load cell is capable of compensating for the added weight of attached dispensing devices used in the semiconductor industry. Additionally, the load cell continuously displays the weight of the chemicals as they are withdrawn from the chemical storage device. These functionalities are included in the control logic of the load cell which is incorporated into the load cell itself.

Abstract: Provided is a novel chamber effluent monitoring system. The system comprises a chamber having an exhaust line connected thereto. The exhaust line includes a sample region, wherein substantially all of a chamber effluent also passes through the sample region. The system further comprises an absorption spectroscopy measurement system for detecting a gas phase molecular species. The measurement system comprises a light source and a main detector in optical communication with the sample region through one or more light transmissive window. The light source directs a light beam into the sample region through one of the one or more light transmissive window. The light beam passes through the sample region and exits the sample region through one of the one or more light transmissive window. The main detector responds to the light beam exiting the sample region.

Abstract: Provided is a novel chamber effluent monitoring system. The system comprises a chamber having an exhaust line connected thereto. The exhaust line includes a sample region, wherein substantially all of a chamber effluent also passes through the sample region. The system further comprises an absorption spectroscopy measurement system for detecting a gas phase molecular species. The measurement system comprises a light source and a main detector in optical communication with the sample region through one or more light transmissive window. The light source directs a light beam into the sample region through one of the one or more light transmissive window. The light beam passes through the sample region and exits the sample region through one of the one or more light transmissive window. The main detector responds to the light beam exiting the sample region.

Abstract: Provided is a novel chamber effluent monitoring system. The system comprises a chamber having an exhaust line connected thereto. The exhaust line includes a sample region, wherein substantially all of a chamber effluent also passes through the sample region. The system further comprises an absorption spectroscopy measurement system for detecting a gas phase molecular species. The measurement system comprises a light source and a main detector in optical communication with the sample region through one or more light transmissive window. The light source directs a light beam into the sample region through one of the one or more light transmissive window. The light beam passes through the sample region and exits the sample region through one of the one or more light transmissive window. The main detector responds to the light beam exiting the sample region.

Abstract: Provided is a novel semiconductor processing system. The system includes a process chamber for treating a semiconductor substrate with one or more process gases comprising water vapor, means for delivering the water vapor or one or more precursors thereof to the process chamber, an exhaust conduit connected to the process chamber, an absorption spectroscopy system for sensing water vapor in a sample region, and a control system which controls water vapor content in the process chamber. Also provided is a method for controlling the water vapor level in a semiconductor process chamber. The system and method allow for measurement and control of the water vapor level in a semiconductor processing chamber in which water vapor is present as a process gas.

Abstract: Provided is a novel system and method for delivery of gas from a liquefied state. The system includes (a) a delivery vessel holding a bulk quantity of liquefied gas therein; (b) a heat exchanger disposed on the delivery vessel to provide or remove energy from the liquefied gas only; and (c) a pressure controller for monitoring and adjusting the energy delivered to the vessel. The system and method allow for controlled delivery of liquefied gas from a delivery vessel at a predetermined flow rate. Particular applicability is found in the delivery of gases to semiconductor process tools.

Abstract: Burner firing method and device are presented where an oxidizing oxygen-fuel burner is fired at an angle to the reducing air-fuel burner flame to reduce overall NOx emissions from high temperature furnaces. The oxidizing oxy-fuel burner stoichiometric equivalence ratio (oxygen/fuel) is maintained in the range of about 1.5 to about 12.5. The reducing air-fuel burner is fired at an equivalence ratio of 0.6 to 1.00 to reduce the availability of oxygen in the flame and reducing NOx emissions. The oxidizing flame from the oxy-fuel burner is oriented such that the oxidizing flame gas stream intersects the reducing air-fuel flame gas stream at or near the tail section of the air-fuel flame. The inventive methods improve furnace temperature control and thermal efficiency by eliminating some nitrogen and provide an effective burnout of CO and other hydrocarbons using the higher mixing ability of the oxidizing flame combustion products.