Abstract: A system and method for processing substrates that achieves isothermal and uniform fluid flow processing conditions for a plurality of substrates. In one aspect, the invention is a system and method that utilizes matching the emissivity value of the surfaces of a process chamber that oppose exposed surfaces of the substrates with the emissivity value of the exposed surfaces to achieve isothermal conditions throughout a substrate stack. In another aspect, the invention is system and method of processing substrates in a process chamber that exhibits excellent fluid flow uniformity by eliminating cavities or geometrical irregularities in the process chamber profile due to substrate loading openings. In yet anther aspect, the invention is a system and method of processing substrates wherein the process chamber comprises a liner and a shell, the liner constructed of a highly thermally conductive material, such as carbon, and the shell is constructed of a non-porous material, such as stainless steel.

Abstract: A chemical vapor deposition (CVD) reactor comprising: a reactor chamber; a substrate holder located within the reactor chamber; a gas inlet system arranged to provide a gas flow rotating above the substrate holder; and a gas exhaust. The flow characteristics of the precursor gas are controlled to equalize the thin film thickness across the substrate surface by forcing the gas into a smaller volume as it moves across the substrate. With a central exhaust, this is done by reducing the height of the reactor chamber with increasing proximity to the center of the reactor chamber so that the reactor volume per unit distance decreases as the gas moves from the inlet to the exhaust.

Abstract: Chemical vapor deposition reactor incorporating gas flow vortex formation for uniform chemical vapor deposition upon a stationary wafer substrate. Gas flow including chemical vapors is introduced in tangential fashion to the interior of the heated reactor to provide for suitable uniform boundary layer control within the reactor upon the stationary wafer substrate.

Abstract: Chemical vapor deposition reactor incorporating gas flow vortex formation for uniform chemical vapor deposition upon a stationary wafer substrate. Gas flow including chemical vapors is introduced in tangential fashion to the interior of the heated reactor to provide for suitable uniform boundary layer control within the reactor upon the stationary wafer substrate.

Abstract: Method and apparatus for uniform direct radiant heating in a rapid thermal processing reactor where uniformity of temperature across the width and breadth of a semiconductor wafer is achieved by placement of a dome-shaped thermal insert in close proximity to a semiconductor wafer in process. Thermal energy is absorbed by the thermal insert from the semiconductor wafer at a high rate where the spacing between the thermal insert and semiconductor wafer is at a minimum and at a gradually reduced rate where the spacing between the thermal insert and semiconductor wafer is gradually increased. A guard ring is also incorporated to negate bottom side reflective thermal energy exposure.

Abstract: A self-contained modular processing apparatus is disclosed for processing workpieces, and in particular, silicon wafers. The apparatus is constructed of framed modules which plug into a service facility docking subassembly and interlock therewith to make up a complete modular processing system for wafer processing. Each module may be provided with its own wafer transporting mechanism and includes a built-in CPU such that each module is an independent, stand-alone processing unit. Each processing unit, by being capable of independent operation, functions as a building block to configure a modular processing system capable of handling wafer flow in multiple directions while performing a multitude of processing functions or operations. Individual modules are arranged along a line of single fold symmetry such that a single transport mechanism may be employed for transferring wafers among adjacent modules.

Abstract: A self-contained modular processing apparatus is disclosed for processing workpieces, and in particular, silicon wafers. The apparatus is constructed of framed modules which plug into a service facility docking subassembly and interlock therewith to make up a complete modular processing system for wafer processing. Each module may be provided with its own wafer transporting mechanism and includes a built-in CPU such that each module is an independent, stand-alone processing unit. Each processing unit, by being capable of independent operation, functions as a building block to configure a modular processing system capable of handling wafer flow in multiple directions while performing a multitude of processing functions or operations. Individual modules are arranged along a line of single fold symmetry such that a single transport mechanism may be employed for transferring wafers among adjacent modules.