Abstract: An approach for detecting sudden changes in acceleration in a semiconductor device or semiconductor package containing the semiconductor device is disclosed. In one embodiment, a piezoelectric sensor is embedded in a semiconductor die. The piezoelectric sensor is configured to sense a mechanical force applied to the semiconductor die. An excessive force indicator is coupled to the piezoelectric sensor. The excessive force indicator is configured to generate an excessive force indication in response to the piezoelectric sensor sensing that the mechanical force applied to the semiconductor die has exceeded a predetermined threshold indicative of an excessive mechanical force.

Abstract: A self-healing crack stop structure and methods of manufacture are disclosed herein. The structure comprises a crack stop structure formed in one or more dielectric layers and surrounding an active region of an integrated circuit chip. The crack stop comprises self healing material which, upon propagation of a crack, is structured to seal the crack and prevent further propagation of the crack.

Abstract: Various embodiments include localized hardening of dicing channels in an integrated circuit (IC) wafer. In some embodiments, a method includes: applying localized heat to a metal interconnect in a wafer kerf on an IC wafer using a heat source; and removing the heat source to cool the metal interconnect after the applying of the localized heat to the metal interconnect, wherein the applying of the heat and the removing of the heat source increases a hardness of the metal interconnect.

Abstract: Various embodiments include localized hardening of dicing channels in an integrated circuit (IC) wafer. In some embodiments, a method includes: applying localized heat to a metal interconnect in a wafer kerf on an IC wafer using a heat source; and removing the heat source to cool the metal interconnect after the applying of the localized heat to the metal interconnect, wherein the applying of the heat and the removing of the heat source increases a hardness of the metal interconnect.

Abstract: A self-healing crack stop structure and methods of manufacture are disclosed herein. The structure comprises a crack stop structure formed in one or more dielectric layers and surrounding an active region of an integrated circuit chip. The crack stop comprises self healing material which, upon propagation of a crack, is structured to seal the crack and prevent further propagation of the crack.

Abstract: An approach for detecting sudden changes in acceleration in a semiconductor device or semiconductor package containing the semiconductor device is disclosed. In one embodiment, a piezoelectric sensor is embedded in a semiconductor die. The piezoelectric sensor is configured to sense a mechanical force applied to the semiconductor die. An excessive force indicator is coupled to the piezoelectric sensor. The excessive force indicator is configured to generate an excessive force indication in response to the piezoelectric sensor sensing that the mechanical force applied to the semiconductor die has exceeded a predetermined threshold indicative of an excessive mechanical force.

Abstract: A process for the preparation of .alpha.-chloroacetoacetanilide compounds (.alpha.-Cl AAA) which comprises the steps of:(a) reacting an acetoacetanilide compound (AAA) with chlorine in the presence of a solvent mixture consisting essentially of an organic solvent and water, wherein the percent water to organic solvent in the solvent mixture is between about 10% and 150% (v/v);(b) isolating the .alpha.-Cl AAA produced in step (a); and(c) optionally hydrogenating any .alpha.,.alpha.-dichloroacetoacetanilide compound (.alpha.,.alpha.-diCl AAA) produced in step (a), with hydrogen in the presence of a catalyst selected from the group consisting of palladium, platinum and Raney nickel, and in the presence of a solvent mixture consisting essentially of water and an organic solvent, wherein the percent of the water to the organic solvent in the solvent mixture is between 10% to 150% (v/v), for a period of time sufficient to produce .alpha.-Cl AAA; and isolating the .alpha.-Cl AAA so produced.

Abstract: An organophosphorus compound having the structural formula ##STR1## where R is C.sub.1 -C.sub.4 alkyl; R.sup.1 is hydrogen or methyl; or R and R.sup.1 together are a diradical having the formula --SC(Y).dbd.Z--, where Y is halogen, hydrogen or C.sub.1 -C.sub.2 alkyl; and Z is nitrogen, CH, C(CH.sub.3) or C(C.sub.2 H.sub.5) with the proviso that if Y is hydrogen, Z cannot be CH; R.sup.2 is hydrogen, chlorine or bromine; R.sup.3 is methyl or ethyl; R.sup.4 is methoxy, ethoxy, --SCH.sub.3 or --SC.sub.2 H.sub.5 ; and X is oxygen or sulfur and their hydrochlorides is disclosed. These compounds are useful as insecticides or nematocides.In another aspect of this invention a method of controlling rice planthoppers is provided. In this method an insecticidally effective amount of a compound having the formula given above where R is C.sub.1 -C.sub.4 alkyl or benzyl; R.sup.1 is hydrogen or C.sub.1 -C.sub.3 alkyl; or R and R.sup.1 together are a diradical selected from the group consisting of --CH.dbd.CH--CH.dbd.

Abstract: An organophosphorus compound of the formula ##STR1## where R and R.sup.1 together form a 1,3-butadien-1,4-diyl group optionally substituted with a chloro group, or R and R.sup.1 together form a 1,2-ethenediylthio group wherein sulfur is attached to carbon; R.sup.2 is hydrogen, chlorine or bromine; X is O or S; R.sup.3 is C.sub.1 -C.sub.2 alkyl; and R.sup.4 is C.sub.1 or C.sub.2 alkoxy or propylthio is disclosed. The organophosphorus compounds defined above are effective in the control of insects, nematodes and acarids.

Abstract: A compound of the formula ##STR1## wherein R and R.sup.1 together form a 1,3-butadien-1,4-diyl group optionally substituted with a methyl or chloro group and R.sup.2 is halogen is disclosed. The compound is useful as an intermediate in the synthesis of insecticidal organophosphorus compounds.