Patents by Inventor Benjamin J. Sloan, Jr.

Benjamin J. Sloan, Jr. has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Selective diffusion and etching method for isolation of integrated logic circuit
    Patent number: 4137109
    Abstract: An integrated injection logic circuit, wherein the inverted, multi-collector transistor of each cell includes active base regions separated by dielectric isolation, and wherein a heavily-doped channel-stop layer is selectively located along the sidewalls of the isolation, to prevent collector-to-emitter surface inversion leakage. The isolated geometry substantially reduces parasitic capacitance between the substrate and the extrinsic base, thereby increasing the switching speed of the device.
    Type: Grant
    Filed: February 3, 1977
    Date of Patent: January 30, 1979
    Assignee: Texas Instruments Incorporated
    Inventors: James G. Aiken, Benjamin J. Sloan, Jr.