Patents by Inventor BENJAMIN JAMES TIMMER

BENJAMIN JAMES TIMMER has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • IC with thin film resistor with metal walls
    Patent number: 11424183
    Abstract: An integrated circuit (IC) includes a substrate having a semiconductor surface layer with functional circuitry for realizing at least one circuit function, with an inter level dielectric (ILD) layer on a metal layer that is above the semiconductor surface layer. A thin film resistor (TFR) including a TFR layer is on the ILD layer. At least one vertical metal wall is on at least two sides of the TFR. The metal walls include at least 2 metal levels coupled by filled vias. The functional circuitry is outside the metal walls.
    Type: Grant
    Filed: August 17, 2020
    Date of Patent: August 23, 2022
    Assignee: Texas Instruments Incorporated
    Inventors: Qi-Zhong Hong, Honglin Guo, Benjamin James Timmer, Gregory Boyd Shinn
  • IC WITH THIN FILM RESISTOR WITH METAL WALLS
    Publication number: 20200381358
    Abstract: An integrated circuit (IC) includes a substrate having a semiconductor surface layer with functional circuitry for realizing at least one circuit function, with an inter level dielectric (ILD) layer on a metal layer that is above the semiconductor surface layer. A thin film resistor (TFR) including a TFR layer is on the ILD layer. At least one vertical metal wall is on at least two sides of the TFR. The metal walls include at least 2 metal levels coupled by filled vias. The functional circuitry is outside the metal walls.
    Type: Application
    Filed: August 17, 2020
    Publication date: December 3, 2020
    Inventors: Qi-Zhong HONG, Honglin GUO, Benjamin James Timmer, Gregory Boyd SHINN
  • IC with thin film resistor with metal walls
    Patent number: 10784193
    Abstract: An integrated circuit (IC) includes a substrate having a semiconductor surface layer with functional circuitry for realizing at least one circuit function, with an inter level dielectric (ILD) layer on a metal layer that is above the semiconductor surface layer. A thin film resistor (TFR) including a TFR layer is on the ILD layer. At least one vertical metal wall is on at least two sides of the TFR. The metal walls include at least 2 metal levels coupled by filled vias. The functional circuitry is outside the metal walls.
    Type: Grant
    Filed: July 27, 2018
    Date of Patent: September 22, 2020
    Assignee: TEXAS INSTRUMENTS INCORPORATED
    Inventors: Qi-Zhong Hong, Honglin Guo, Benjamin James Timmer, Gregory Boyd Shinn
  • IC WITH THIN FILM RESISTOR WITH METAL WALLS
    Publication number: 20200035598
    Abstract: An integrated circuit (IC) includes a substrate having a semiconductor surface layer with functional circuitry for realizing at least one circuit function, with an inter level dielectric (ILD) layer on a metal layer that is above the semiconductor surface layer. A thin film resistor (TFR) including a TFR layer is on the ILD layer. At least one vertical metal wall is on at least two sides of the TFR. The metal walls include at least 2 metal levels coupled by filled vias. The functional circuitry is outside the metal walls.
    Type: Application
    Filed: July 27, 2018
    Publication date: January 30, 2020
    Inventors: QI-ZHONG HONG, HONGLIN GUO, BENJAMIN JAMES TIMMER, GREGORY BOYD SHINN