Abstract: An integrated injection logic circuit having improved operating characteristics is provided, comprising an inverted, multiple-collector transistor having base regions characterized by a central active portion surrounded by a heavily-doped extrinsic base region to which the base contact is made. Using ion implantation, each active portion of the base region is provided with a dopant concentration which increases with distance from the collector junction, thereby increasing transistor speed and gain. The extrinsic portion of the base reduces series resistance for multicollector transistors, provides heavy doping at the surface for good ohmic base contacts; and most importantly, defines the active emitter-base regions. The effective or "active" collector-to-emitter area ratio of the device is improved by more than 50:1 compared with prior devices.

Abstract: Disclosed is a method of fabricating dielectrically isolated semiconductor components of an integrated circuit, and the semiconductor component formed by this method, each component having a plurality of high conductivity regions extending from the interior of said component to the surface thereof to provide high conductivity paths to selected semiconductor regions of the component.

Abstract: A self-aligning process for fabrication of integrated circuits utilizing ion implantation to effect doping. A composed masking technique is used to define self-aligned areas in a silicon oxide layer for definition of isolation, base, resistor and collector contact regions. Only two oxide removal steps are required for isolation through emitter process steps, and the process uses the silicon oxide layer and photoresist material for implantation masking. Formation of the emitter region by ion implantation and by diffusion are described.