Abstract: Entrained metal hydride particle are removed from a flow of hydrogen from a Mg-based hydride storage unit using not only a particle filter but improvements for reducing or eliminating drastic changes in flow. In addition to or alternative to removal of entrained metal hydride particles, methane produced by reaction of hydrogen with steel in a metal hydride system preferably operated above 350° C. is removed downstream of the Mg-based hydride storage unit using an adsorption cartridge, preferably containing activated carbon.

Abstract: Entrained metal hydride particle are removed from a flow of hydrogen from a Mg-based hydride storage unit using not only a particle filter but improvements for reducing or eliminating drastic changes in flow. In addition to or alternative to removal of entrained metal hydride particles, methane produced by reaction of hydrogen with steel in a metal hydride system preferably operated above 350° C. is removed downstream of the Mg-based hydride storage unit using an adsorption cartridge, preferably containing activated carbon.

Abstract: Entrained metal hydride particle are removed from a flow of hydrogen from a Mg-based hydride storage unit using not only a particle filter but improvements for reducing or eliminating drastic changes in flow. In addition to or alternative to removal of entrained metal hydride particles, methane produced by reaction of hydrogen with steel in a metal hydride system preferably operated above 350° C. is removed downstream of the Mg-based hydride storage unit using an adsorption cartridge, preferably containing activated carbon.

Abstract: Entrained metal hydride particle are removed from a flow of hydrogen from a Mg-based hydride storage unit using not only a particle filter but improvements for reducing or eliminating drastic changes in flow. In addition to or alternative to removal of entrained metal hydride particles, methane produced by reaction of hydrogen with steel in a metal hydride system preferably operated above 350° C. is removed downstream of the Mg-based hydride storage unit using an adsorption cartridge, preferably containing activated carbon.

Abstract: Methods and compositions for depositing metal films are described herein. In general, the disclosed methods utilize precursor compounds comprising gold, silver or copper. More specifically, the disclosed precursor compounds utilize neutral ligands derived from ethylene or acetylene.

Abstract: Method for producing a metal silicon (oxy)nitride by introducing a carbon-free silicon source (for example, (SiH3)3N), a metal precursor with the general formula MXn (for example, Hf(NEt2)4), and an oxidizing agent (for example, O2) into a CVD chamber and reacting same at the surface of a substrate. MsiN, MSIo and/or MSiON films may be obtained. These films are useful are useful as high k dielectrics films.

Abstract: Method for producing a metal silicon (oxy)nitride by introducing a carbon-free silicon source (for example, (SiH3)3N), a metal precursor with the general formula MXn (for example, Hf(NEt2)4), and an oxidizing agent (for example, O2) into a CVD chamber and reacting same at the surface of a substrate. MsiN, MSIo and/or MSiON films may be obtained. These films are useful are useful as high k dielectrics films.

Abstract: A chemical storage device and a method for monitoring chemical usage are described herein. The device and disclosed method utilize a chemical storage canister and a load cell integrated into one transportable unit. The load cell is capable of compensating for the added weight of attached dispensing devices used in the semiconductor industry. Additionally, the load cell continuously displays the weight of the chemicals as they are withdrawn from the chemical storage device. These functionalities are included in the control logic of the load cell which is incorporated into the load cell itself.

Abstract: This disclosure discusses the forming of gate dielectrics in semi conductor devices, and more specifically to forming thin high-k dielectric films on silicon substrates typically using chemical vapor deposition or atomic layer deposition processes. The current invention forms a high-k dielectric film in a single film-forming step using a vapor phase silicon precursor in conjunction with a liquid phase metal precursor, a nitrogen source and an oxygen source for the deposition of a metal silicon oxy nitride (MSiON) film of desired stochiometry. The vapor phase silicon precursor is not coordinated to a metal allowing independent control over feeding of the metal source and the silicon source. Thus, the M/Si ratio can be easily varied over a wide range.

Abstract: Liquid precursor refill systems of the type typically used in the semiconductor industry. A remote precursor reservoir and a secondary vapor delivery system provide a CVD precursor to a local source. The local source contains a heat transfer means and a local CVD precursor reservoir. A delivery line connects this remote, secondary vapor delivery system and the local heat transfer means. During the constant or periodic operation, no liquid is present in the delivery line. The local CVD precursor reservoir may serve as an ampoule in a bubbler system, or may provide CVD precursor to an ampoule in a bubbler system.

Abstract: This disclosure discusses the forming of gate dielectrics in semi conductor devices, and more specifically to forming thin high-k dielectric films on silicon substrates typically using chemical vapor deposition or atomic layer deposition processes. The current invention forms a high-k dielectric film in a single film-forming step using a vapor phase silicon precursor in conjunction with a liquid phase metal precursor, a nitrogen source and an oxygen source for the deposition of a metal silicon oxy nitride (MSiON) film of desired stochiometry. The vapor phase silicon precursor is not coordinated to a metal allowing independent control over feeding of the metal source and the silicon source. Thus, the M/Si ratio can be easily varied over a wide range.

Abstract: This disclosure discusses the forming of gate dielectrics in semi conductor devices, and more specifically to forming thin high-k dielectric films on silicon substrates typically using chemical vapor deposition or atomic layer deposition processes. The current invention forms a dielectric film in a single film-forming step using a vapor phase silicon precursor in conjunction with a nitrogen source and an oxygen source for the deposition of a silicon oxy nitride (SiON) film of desired stochiometry. The vapor phase silicon precursor, nitrogen source and oxygen source are carbon and chlorine free, eliminating the undesirable effects of carbon and chlorine in the dielectric film or solid deposits in the chamber exhaust.

Abstract: This disclosure discusses the forming of gate dielectrics in semi conductor devices, and more specifically to forming thin high-k dielectric films on silicon substrates typically using chemical vapor deposition or atomic layer deposition processes. The current invention forms a high-k dielectric film in a single film-forming step using a vapor phase silicon precursor in conjunction with a liquid phase metal precursor, a nitrogen source and an oxygen source for the deposition of a metal silicon oxy nitride (MSiON) film of desired stochiometry. The vapor phase silicon precursor is not coordinated to a metal allowing independent control over feeding of the metal source and the silicon source. Thus, the M/Si ratio can be easily varied over a wide range.

Abstract: Provided are novel methods of preventing deposition on an optical component in an absorption spectroscopy measurement cell. The methods involve performing an absorption spectroscopy measurement of a sample gas introduced into the cell, and introducing a flow of purge gas from a purge gas inlet pipe across a critical surface of the optical element at a velocity effective to prevent deposition on the critical surface. The gas inlet is disposed adjacent said critical surface. Also provided are devices for practicing the inventive method, measurement cells useful in absorption spectroscopy measurements, apparatuses for performing an absorption spectroscopy measurement and semiconductor processing apparatuses. The invention allows for the performance of accurate spectroscopic measurements. Because deposits are prevented from forming on the surface of an optical element, interference therefrom can effectively be avoided.

Abstract: This device for treating items stored in at least one container (12), comprises means (14) for supplying the containers with a treatment gas and means (16) for continuously purging the containers, the supply means being equipped with means (22) for regulating the pressure of the treatment gas upstream of the containers. The purging means comprise a gas ejector (28) connected to the outlet of the containers (12) and supplied with a drive gas so as to regulate the pressure of the treatment gas downstream of the containers (12) and thus control the flow rate of the treatment gas therein.

Abstract: Provided is a novel system and method for delivery of a gas from a liquified state. The system includes: (a) a compressed liquified gas cylinder having a gas line connected thereto through which the gas is withdrawn; (b) a gas cylinder cabinet in which the gas cylinder is housed; and (c) means for increasing the heat transfer rate between ambient and the gas cylinder without increasing the temperature of the liquid in the gas cylinder above ambient temperature. The apparatus and method allow for the controlled delivery of liquified gases from gas cabinets at high flowrates. Particular applicability is found in the delivery of gases to semiconductor process tools.

Abstract: Provided is a novel system and method for delivery of a gas from a liquified state. The system includes: (a) a compressed liquified gas cylinder having a gas line connected thereto through which the gas is withdrawn; (b) a gas cylinder cabinet in which the gas cylinder is housed; and (c) means for increasing the heat transfer rate between ambient and the gas cylinder without increasing the gas cylinder temperature above ambient temperature. The apparatus and method allow for the controlled delivery of liquified gases from gas cabinets at high flowrates. Particular applicability is found in the delivery of gases to semiconductor process tools.

Abstract: Provided is a novel method for rapidly determining an impurity level in a gas source. A gas source and a measurement tool are provided for measuring an impurity level in a gas flowing from the gas source. The measurement tool is in communication with the gas source through a sampling line. The sampling line has a gas inlet disposed upstream from a gas outlet. The sampling line is baked according to a baking strategy, such that when baking is terminated, a concentration profile of the impurity in the sampling line contains a first region and a second region. In the first region, extending from the gas inlet to a point downstream from the inlet, the vapor phase concentration of the impurity is less than the vapor phase concentration of the impurity in the gas entering the sampling line.

Abstract: A circuit board is wave soldered as it is carried by a conveyor through a solder wave established in a solder reservoir. Disposed on both sides of the solder wave are gas plenums which discharge shield gas. The gas plenums include orifices for directing shield gas (i) at high velocity toward the solder wave to protect the solder wave with an atmosphere of shield gas, and/or (ii) upwardly toward an underside of the circuit board to strip entrained air therefrom. The solder wave is generated by a pump driven by a drive shaft that extends downwardly into the solder reservoir. An upper portion of the drive shaft is surrounded by a stationary hollow sleeve which projects into the solder reservoir to restrict the churning of the solder during rotation of the drive shaft. A shield gas is introduced into the sleeve to inert the solder being churned. An enclosure is positioned above the solder reservoir having an inlet and an outlet through which the circuit boards are conveyed.

Abstract: A device and a method for its use for the removal of contaminants from a gas cylinder valve assembly. The valve assembly output is fed to the device which in turn has inlet and outlet connections to receive and to pass purge gas therethrough. The device is sized and positioned so that contaminants can be purged and a vacuum drawn from the gas cylinder valve assembly at the assembly location itself thus increasing the efficiency of contaminant removal.