Abstract: A system and method for simulating an electronic circuit is disclosed. The method includes creating a finite set of circuit or device parameter points selected from within an n-dimensional parameter space. The method includes determining, for each circuit or device parameter point of the set, a corresponding response value of the performance metric and a corresponding probability of occurrence. The method includes determining, for a predetermined value of the performance metric, the total probability of occurrence.

Abstract: A p-channel metal-oxide-semiconductor (pMOS) transistor including a gate stack which includes: a silicon oxide comprising dielectric interlayer on a substrate, wherein the dielectric interlayer has a thickness below 1 nm; a high-k dielectric layer having a higher dielectric constant compared to the dielectric interlayer; a first dipole-forming capping layer between the dielectric interlayer and the high-k dielectric layer and in direct contact with the dielectric interlayer, for shifting down a high-K bandgap of the high-k dielectric layer with relation to a valence band of the substrate, where the first dipole-forming capping layer has a thickness below 2 nm; at least one work function metal above the high-k dielectric layer. Advantageously, the pMOS transistor includes low negative bias temperature instability (NBTI) and therefore high reliability without the use of a reliability anneal which makes the pMOS transistor suitable for use as back end of line (BEOL) devices.

Abstract: A p-channel metal-oxide-semiconductor (pMOS) transistor including a gate stack which includes: a silicon oxide comprising dielectric interlayer on a substrate, wherein the dielectric interlayer has a thickness below lnm; a high-k dielectric layer having a higher dielectric constant compared to the dielectric interlayer; a first dipole-forming capping layer between the dielectric interlayer and the high-k dielectric layer and in direct contact with the dielectric interlayer, for shifting down a high-K bandgap of the high-k dielectric layer with relation to a valence band of the substrate, where the first dipole-forming capping layer has a thickness below 2nm; at least one work function metal above the high-k dielectric layer. Advantageously, the pMOS transistor includes low negative bias temperature instability (NBTI) and therefore high reliability without the use of a reliability anneal which makes the pMOS transistor suitable for use as back end of line (BEOL) devices.

Abstract: A system and method for simulating an electronic circuit is disclosed. The method includes creating a finite set of circuit or device parameter points selected from within an n-dimensional parameter space. The method includes determining, for each circuit or device parameter point of the set, a corresponding response value of the performance metric and a corresponding probability of occurrence. The method includes determining, for a predetermined value of the performance metric, the total probability of occurrence.

Abstract: A device and a method for implementing a physically unclonable function is disclosed. In one aspect, the device includes at least one electronic structure including a dielectric. A conductive path is formed at a random position through the dielectric due to an electrical breakdown of the dielectric, or the electronic structure is adapted for generating an electrical breakdown of the dielectric such that the conductive path is formed through the dielectric at a random position. The at least one electronic structure is adapted for determining a distinct value of a set comprising at least two predetermined values. The distinct value is determined by the position of the conductive path through the dielectric.

Abstract: A device and a method for implementing a physically unclonable function is disclosed. In one aspect, the device includes at least one electronic structure including a dielectric. A conductive path is formed at a random position through the dielectric due to an electrical breakdown of the dielectric, or the electronic structure is adapted for generating an electrical breakdown of the dielectric such that the conductive path is formed through the dielectric at a random position. The at least one electronic structure is adapted for determining a distinct value of a set comprising at least two predetermined values. The distinct value is determined by the position of the conductive path through the dielectric.

Abstract: A system and method for simulating an electronic circuit is disclosed. The method includes creating a finite set of circuit or device parameter points selected from within an n-dimensional parameter space. The method includes determining, for each circuit or device parameter point of the set, a corresponding response value of the performance metric and a corresponding probability of occurrence. The method includes determining, for a predetermined value of the performance metric, the total probability of occurrence.

Abstract: A method for forming a semiconductor device is disclosed. The device includes a control electrode on a semiconductor P-channel layer having at least a gate dielectric layer. The gate dielectric layer has an exponentially decreasing density of defect levels Et in as function of energy from the band edges of the adjacent layer (the semiconductor P-channel layer or optionally the capping layer) toward the center of the bandgap of this layer. The method includes selecting at least one parameter of the P-channel semiconductor device such that the inversion carrier injection into the distribution of defect levels deviates from the energy level at the center of the bandgap of a layer adjacent the gate dielectric layer at the same side of the gate dielectric layer as the P-channel layer, with a value not more than about 49%, such as not more than about 40%, for example not more than about 20%, not more than about 10%, even not more than about 5% of that bandgap in eV. In one aspect, this allows reducing NBTI.

Abstract: A method for forming a semiconductor device is disclosed. The device includes a control electrode on a semiconductor P-channel layer having at least a gate dielectric layer. The gate dielectric layer has an exponentially decreasing density of defect levels Et in as function of energy from the band edges of the adjacent layer (the semiconductor P-channel layer or optionally the capping layer) toward the center of the bandgap of this layer. The method includes selecting at least one parameter of the P-channel semiconductor device such that the inversion carrier injection into the distribution of defect levels deviates from the energy level at the center of the bandgap of a layer adjacent the gate dielectric layer at the same side of the gate dielectric layer as the P-channel layer, with a value not more than about 49%, such as not more than about 40%, for example not more than about 20%, not more than about 10%, even not more than about 5% of that bandgap in eV. In one aspect, this allows reducing NBTI.