Abstract: A system and method for testing performance of a plurality of memory modules includes generating a clock signal at a set frequency and sending the clock signal to the memory modules. An initial data pattern is sent to an input of a first memory module. A subsequent data pattern received from the first memory module is delayed by a predetermined delay time and sent to an input of a last memory module. The initial data pattern and the subsequent data pattern received from the output of the last memory module are compared and a performance of the memory modules is also calculated.

Abstract: A methodology for the simulation of semiconductor memory devices that exhibits improved accuracy and speed, and the apparatus performing the methodology are disclosed. Embodiments may include determining a state of a bitcell of an integrated circuit (IC) design, determining a first threshold voltage for the bitcell based on the state of the bitcell, and simulating electrical characteristics of the bitcell according to the first threshold voltage to verify the IC design.

Abstract: A methodology for the simulation of semiconductor memory devices that exhibits improved accuracy and speed, and the apparatus performing the methodology are disclosed. Embodiments may include determining a state of a bitcell of an integrated circuit (IC) design, determining a first threshold voltage for the bitcell based on the state of the bitcell, and simulating electrical characteristics of the bitcell according to the first threshold voltage to verify the IC design.

Abstract: A system and method for testing performance of a plurality of memory modules includes generating a clock signal at a set frequency and sending the clock signal to the memory modules. An initial data pattern is sent to an input of a first memory module. A subsequent data pattern received from the first memory module is delayed by a predetermined delay time and sent to an input of a last memory module. The initial data pattern and the subsequent data pattern received from the output of the last memory module are compared and a performance of the memory modules is also calculated.

Abstract: A fuse circuit having a fuse unit cell containing two fuses. In the program/write mode, only one of the fuses in the fuse unit cell will be blown. In read mode, since only one fuse is blown, the current that goes through the two fuses in the fuse unit cell will be very small. Hence, the read power consumption for the fuse circuit is also very small and its sensing speed is also very high.

Abstract: A fuse sensing circuit is disclosed. Embodiments include: providing a sense input terminal; providing a sense output terminal; and providing first and second capacitors that are configured to charge and discharge based on the sense input terminal, wherein the first and second capacitors are further configured to discharge current to a fuse unit cell, and the sense output terminal is configured to indicate a fuse state of the fuse unit cell based on the discharging of the first and second capacitors. Embodiments include the indicated fuse state being based on a discharge rate difference between the discharging of the first capacitor and the discharging of the second capacitor.

Abstract: A fuse circuit having a fuse unit cell containing two fuses. In the program/write mode, only one of the fuses in the fuse unit cell will be blown. In read mode, since only one fuse is blown, the current that goes through the two fuses in the fuse unit cell will be very small. Hence, the read power consumption for the fuse circuit is also very small and its sensing speed is also very high.

Abstract: A fuse sensing circuit is disclosed. Embodiments include: providing a sense input terminal; providing a sense output terminal; and providing first and second capacitors that are configured to charge and discharge based on the sense input terminal, wherein the first and second capacitors are further configured to discharge current to a fuse unit cell, and the sense output terminal is configured to indicate a fuse state of the fuse unit cell based on the discharging of the first and second capacitors. Embodiments include the indicated fuse state being based on a discharge rate difference between the discharging of the first capacitor and the discharging of the second capacitor.

Abstract: An enhanced method of testing semiconductor devices having nonvolatile elements by determining regions of the semiconductor having differing orders of probability that a defect will occur. The enhanced method of testing includes testing of regions from the highest probability to the lowest probability of having a defect. Nonvolatile memory elements in the region being tested are placed in a high impedance state, bypass circuits in the region being tested are activated to bypass the nonvolatile memory elements that control the state of elements in the region being tested and test vectors are applied to the elements that are controlled by the bypassed nonvolatile memory elements. This procedure is repeated for the next untested region having the highest probability of having a defect until all regions have been tested.