Patents by Inventor Benjamin Lu chen Wang

Benjamin Lu chen Wang has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 7323112
    Abstract: A method for milling a structure. A single- or multi-layer resist having no undercut is added to a surface of a structure to be milled, the surface to be milled defining a plane. A milling process, such as ion milling, is performed. The milling process includes milling the structure at high incidence and milling the structure at razing incidence. The milling process can be performed only once, or repeated multiple times. High incidence can be defined as about 65 to about 90 degrees from the plane of the surface being milled. Razing incidence can be defined as about 0 to about 30 degrees from the plane of the surface being milled.
    Type: Grant
    Filed: August 29, 2003
    Date of Patent: January 29, 2008
    Assignee: Hitachi Global Storage Technologies Netherlands B.V.
    Inventors: Amanda Baer, Marie-Claire Cyrille, Frederick Hayes Dill, Wipul Pemsiri Jayaekara, Jui-Lung Li, Hugo Alberto Emilio Santini, Benjamin Lu Chen Wang
  • Patent number: 7270758
    Abstract: A method is presented for fabricating a read head having a read head sensor and a hard bias/lead layer which includes depositing a strip of sensor material in a sensor material region, and depositing strips of fast-milling dielectric material in first and second fast-milling dielectric material regions adjacent to the sensor material region. A protective layer and a layer of masking material is deposited on the strip of sensor material and the strips of fast-milling dielectric material to provide masked areas and exposed areas. A shaping source, such as an ion milling source, is provided which shapes the exposed areas. Hard bias/lead material is then deposited on the regions of sensor material and fast-milling dielectric material to form first and second leads and a cap on each of these regions. The cap of hard bias/lead material and the masking material is then removed from each of these regions.
    Type: Grant
    Filed: March 15, 2005
    Date of Patent: September 18, 2007
    Assignee: Hitachi Global Storage Technologies Netherlands, B.V.
    Inventors: Shawn Marie Collier Hernandez, Wipul Pemsiri Jayasekara, Timothy J. Minvielle, Benjamin Lu chen Wang, Howard Gordon Zolla
  • Patent number: 7185310
    Abstract: A charge-balanced, continuous-write mask and wafer process changes the magneto resistive photo-definition step to a two-mask step operation. Critical images are written on one mask layer at a very small electron beam spot size, and non-critical images are written on a second mask layer at a relatively larger electron beam spot size. Both mask layers are put onto the same glass substrate where the critical mask layer is located at the most accurate position on the substrate. The non-critical images may be placed in a peripheral field. In wafer processing, the critical field is aligned and exposed onto the wafer and then the non-critical field is aligned and exposed.
    Type: Grant
    Filed: April 14, 2004
    Date of Patent: February 27, 2007
    Assignee: Hitachi Global Storage Technologies
    Inventors: Robin Lynn Almes, Mark Anthony Church, Mary Kathyrn Gutberlet, Jiunn Tsay, Benjamin Lu Chen Wang
  • Patent number: 6862798
    Abstract: A method of making a magnetic head assembly wherein the magnetic head assembly has a write head with a pole tip includes the steps of forming a shaping layer on an underlying layer wherein the shaping layer has a side surface and a top surface, ion beam sputter depositing a ferromagnetic material layer on the underlying layer and on the side and top surfaces of the shaping layer and removing first and second portions of the ferromagnetic material layer from the underlying layer and the top surface of the shaping layer, respectively, leaving a remaining portion of the ferromagnetic material layer on the side surface of the shaping layer which is the aforementioned pole tip.
    Type: Grant
    Filed: January 18, 2002
    Date of Patent: March 8, 2005
    Assignee: Hitachi Global Storage Technologies Netherlands B.V.
    Inventors: James Bernard Kruger, Benjamin Lu chen Wang, Patrick Rush Webb, Howard Gordon Zolla
  • Publication number: 20030135987
    Abstract: A method of making a magnetic head assembly wherein the magnetic head assembly has a write head with a pole tip includes the steps of forming a shaping layer on an underlying layer wherein the shaping layer has a side surface and a top surface, ion beam sputter depositing a ferromagnetic material layer on the underlying layer and on the side and top surfaces of the shaping layer and removing first and second portions of the ferromagnetic material layer from the underlying layer and the top surface of the shaping layer, respectively, leaving a remaining portion of the ferromagnetic material layer on the side surface of the shaping layer which is the aforementioned pole tip.
    Type: Application
    Filed: January 18, 2002
    Publication date: July 24, 2003
    Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION
    Inventors: James Bernard Kruger, Benjamin Lu Chen Wang, Patrick Rush Webb, Howard Gordon Zolla