Patents by Inventor Benjamin Luke Fletcher

Benjamin Luke Fletcher has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Method to enable the process and enlarge the process window for silicide, germanide or germanosilicide formation in structures with extremely small dimensions
    Patent number: 8247319
    Abstract: Techniques for silicide, germanide or germanosilicide formation in extremely small structures are provided. In one aspect, a method for forming a silicide, germanide or germanosilicide in a three-dimensional silicon, germanium or silicon germanium structure having extremely small dimensions is provided. The method includes the following steps. At least one element is implanted into the structure. At least one metal is deposited onto the structure. The structure is annealed to intersperse the metal within the silicon, germanium or silicon germanium to form the silicide, germanide or germanosilicide wherein the implanted element serves to prevent morphological degradation of the silicide, germanide or germanosilicide. The implanted element can include at least one of carbon, fluorine and silicon.
    Type: Grant
    Filed: February 7, 2011
    Date of Patent: August 21, 2012
    Assignee: International Business Machines Corporation
    Inventors: Benjamin Luke Fletcher, Christian Lavoie, Siegfried Lutz Maurer, Zhen Zhang
  • METHOD TO ENABLE THE PROCESS AND ENLARGE THE PROCESS WINDOW FOR SILICIDE, GERMANIDE OR GERMANOSILICIDE FORMATION IN STRUCTURES WITH EXTREMELY SMALL DIMENSIONS
    Publication number: 20120202345
    Abstract: Techniques for silicide, germanide or germanosilicide formation in extremely small structures are provided. In one aspect, a method for forming a silicide, germanide or germanosilicide in a three-dimensional silicon, germanium or silicon germanium structure having extremely small dimensions is provided. The method includes the following steps. At least one element is implanted into the structure. At least one metal is deposited onto the structure. The structure is annealed to intersperse the metal within the silicon, germanium or silicon germanium to form the silicide, germanide or germanosilicide wherein the implanted element serves to prevent morphological degradation of the silicide, germanide or germanosilicide. The implanted element can include at least one of carbon, fluorine and silicon.
    Type: Application
    Filed: February 7, 2011
    Publication date: August 9, 2012
    Applicant: International Business Machines Corporation
    Inventors: Benjamin Luke Fletcher, Christian Lavoie, Siegfried Lutz Maurer, Zhen Zhang