Patents by Inventor BENJAMIN MADON

BENJAMIN MADON has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • MAGNESIUM OXIDE BASED HARDMASK FOR REACTIVE ION ETCHING
    Publication number: 20230137983
    Abstract: Forming a hardmask layer for reactive ion etching includes depositing a hardmask above an underlayer. The hardmask includes a layer of magnesium oxide having a thickness of up to 10 nm. A resist layer is deposited above the hardmask and developed to form a pattern that exposes portions of the hardmask. The pattern is transferred from the resist layer to the hardmask by rinsing exposed portions of the hardmask with a deionized water solution.
    Type: Application
    Filed: October 28, 2021
    Publication date: May 4, 2023
    Inventors: Aakash Pushp, M A Mueed, Benjamin Madon, Noel Arellano, Krystelle Lionti, Gregory Michael Wallraff, Anthony Bock Fong, Brian Peter Hughes, Vincent Ouazan-Reboul
  • Method of growing titanium nitride on silicon substrate free from silicon nitride interface by using a titanium seed layer
    Patent number: 11177549
    Abstract: A titanium (Ti) seed layer is formed from a Ti source directly on a surface of a substrate, where the surface is substantially free of oxide and nitride, and a reactive nitrogen species is introduced from a nitrogen plasma source and additional Ti is introduced from the Ti source, wherein the nitrogen plasma: (a) reacts with the Ti seed layer to form TiN and (b) reacts with the additional Ti to form additional TiN. The TiN and additional TiN collectively form a TiN superconducting layer that directly contacts the surface of the substrate.
    Type: Grant
    Filed: November 6, 2019
    Date of Patent: November 16, 2021
    Assignee: International Business Machines Corporation
    Inventors: Aakash Pushp, Benjamin Madon, M A Mueed
  • Method of Growing Titanium Nitride on Silicon Substrate Free from Silicon Nitride Interface by Using a Titanium Seed Layer
    Publication number: 20210135330
    Abstract: A titanium (Ti) seed layer is formed from a Ti source directly on a surface of a substrate, where the surface is substantially free of oxide and nitride, and a reactive nitrogen species is introduced from a nitrogen plasma source and additional Ti is introduced from the Ti source, wherein the nitrogen plasma: (a) reacts with the Ti seed layer to form TiN and (b) reacts with the additional Ti to form additional TiN. The TiN and additional TiN collectively form a TiN superconducting layer that directly contacts the surface of the substrate.
    Type: Application
    Filed: November 6, 2019
    Publication date: May 6, 2021
    Inventors: AAKASH PUSHP, BENJAMIN MADON, M A MUEED