Patents by Inventor Benjamin Michaelis

Benjamin Michaelis has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 11227977
    Abstract: An optoelectronic semiconductor device includes a semiconductor layer sequence having an active zone that generates radiation, a first electrode that supplies current directly to a bottom side of the semiconductor layer sequence, and a second electrode that supplies current and extends from the bottom side to a top side of the semiconductor layer sequence opposite the bottom side, wherein the second electrode includes at least one current distribution structure on the top side, and the current distribution structure is impermeable to the generated radiation and electrically connected in a plurality of contact regions to at least one further component of the second electrode and configured for lateral current distribution starting from the contact regions.
    Type: Grant
    Filed: December 19, 2018
    Date of Patent: January 18, 2022
    Assignee: OSRAM OLED GmbH
    Inventor: Benjamin Michaelis
  • Publication number: 20210265213
    Abstract: A semiconductor component may include a first compressive strain layer on top of a semiconductor body. A material for the first compressive strain layer may include Ta, Mo, Nb, compounds thereof, and combinations thereof.
    Type: Application
    Filed: June 27, 2019
    Publication date: August 26, 2021
    Inventors: Benjamin Michaelis, Markus Broell, Robert Walter, Franz Eberhard, Michael Huber, Wolfgang Schmid
  • Publication number: 20210226108
    Abstract: A method for producing a semiconductor component may include applying a semiconductor chip over a first main surface of an insulating substrate, thinning a second main surface of the insulating substrate where the second main surface has a roughness of more than 300 nm after thinning, applying a smoothing metal layer over the second main surface of the insulating substrate, and smoothing the smoothing metal layer. A semiconductor component may include a semiconductor chip, an insulating substrate where the semiconductor chip is arranged over a first main surface of the insulating substrate and a second main surface of the insulating substrate has a roughness Ra of more than 300 nm, and a smoothing metal layer over the second main surface.
    Type: Application
    Filed: May 16, 2019
    Publication date: July 22, 2021
    Inventor: Benjamin Michaelis
  • Publication number: 20190189852
    Abstract: An optoelectronic semiconductor device includes a semiconductor layer sequence having an active zone that generates radiation, a first electrode that supplies current directly to a bottom side of the semiconductor layer sequence, and a second electrode that supplies current and extends from the bottom side to a top side of the semiconductor layer sequence opposite the bottom side, wherein the second electrode includes at least one current distribution structure on the top side, and the current distribution structure is impermeable to the generated radiation and electrically connected in a plurality of contact regions to at least one further component of the second electrode and configured for lateral current distribution starting from the contact regions.
    Type: Application
    Filed: December 19, 2018
    Publication date: June 20, 2019
    Inventor: Benjamin Michaelis