Abstract: In an embodiment, an optoelectronic component includes a structured region including a semiconductor body having a first semiconductor region and a second semiconductor region, which have different conductivities, a first main surface and a second main surface and at least one first delimiting surface and at least one second delimiting surface delimiting a recess, a protective layer, which is arranged on the at least one first delimiting surface and covers a junction between the first semiconductor region and the second semiconductor region in the recess, wherein the first main surface is not covered by the protective layer and the protective layer does not adjoin any further protective layer on a side facing the junction and on a side facing away from the junction, and wherein the protective layer is retracted from the first delimiting surface and the second delimiting surface or wherein the protective layer has an L-shape in cross-section.

Abstract: A method for producing a semiconductor component may include applying a semiconductor chip over a first main surface of an insulating substrate, thinning a second main surface of the insulating substrate where the second main surface has a roughness of more than 300 nm after thinning, applying a smoothing metal layer over the second main surface of the insulating substrate, and smoothing the smoothing metal layer. A semiconductor component may include a semiconductor chip, an insulating substrate where the semiconductor chip is arranged over a first main surface of the insulating substrate and a second main surface of the insulating substrate has a roughness Ra of more than 300 nm, and a smoothing metal layer over the second main surface.

Abstract: A semiconductor component may include a first compressive strain layer on top of a semiconductor body. A material for the first compressive strain layer may include Ta, Mo, Nb, compounds thereof, and combinations thereof.

Abstract: An optoelectronic semiconductor device includes a semiconductor layer sequence having an active zone that generates radiation, a first electrode that supplies current directly to a bottom side of the semiconductor layer sequence, and a second electrode that supplies current and extends from the bottom side to a top side of the semiconductor layer sequence opposite the bottom side, wherein the second electrode includes at least one current distribution structure on the top side, and the current distribution structure is impermeable to the generated radiation and electrically connected in a plurality of contact regions to at least one further component of the second electrode and configured for lateral current distribution starting from the contact regions.

Abstract: A semiconductor component may include a first compressive strain layer on top of a semiconductor body. A material for the first compressive strain layer may include Ta, Mo, Nb, compounds thereof, and combinations thereof.

Abstract: A method for producing a semiconductor component may include applying a semiconductor chip over a first main surface of an insulating substrate, thinning a second main surface of the insulating substrate where the second main surface has a roughness of more than 300 nm after thinning, applying a smoothing metal layer over the second main surface of the insulating substrate, and smoothing the smoothing metal layer. A semiconductor component may include a semiconductor chip, an insulating substrate where the semiconductor chip is arranged over a first main surface of the insulating substrate and a second main surface of the insulating substrate has a roughness Ra of more than 300 nm, and a smoothing metal layer over the second main surface.

Abstract: An optoelectronic semiconductor device includes a semiconductor layer sequence having an active zone that generates radiation, a first electrode that supplies current directly to a bottom side of the semiconductor layer sequence, and a second electrode that supplies current and extends from the bottom side to a top side of the semiconductor layer sequence opposite the bottom side, wherein the second electrode includes at least one current distribution structure on the top side, and the current distribution structure is impermeable to the generated radiation and electrically connected in a plurality of contact regions to at least one further component of the second electrode and configured for lateral current distribution starting from the contact regions.