Abstract: Acoustic filtering circuitry includes a piezoelectric layer, a dielectric layer, a plurality of acoustic resonators, and a capacitor. The dielectric layer is over a surface of the piezoelectric layer. The plurality of acoustic resonators each includes a transducer on the surface of the piezoelectric layer such that the transducer is between the piezoelectric layer and the dielectric layer. The capacitor includes a first plate on the surface of the piezoelectric layer such that the first plate is between the piezoelectric layer and the dielectric layer and a second plate over the first plate such that the second plate and the first plate are separated by at least a portion of the dielectric layer.

Abstract: An acoustic wave device includes a piezoelectric layer, an interdigital transducer, and a slow wave propagation overlay over a portion of the interdigital transducer. By providing electrode fingers of the interdigital transducer such that a portion of the width thereof is dependent on an electrode period, a desirable wave mode may be maintained in the acoustic wave device. Further, by varying a width of the slow wave propagation overlay based on the electrode period, the desirable wave mode may be further maintained.

Abstract: Embodiments of a Surface Acoustic Wave (SAW) device, or filter, and methods of fabrication thereof are disclosed. In some embodiments, the SAW filter comprises a piezoelectric substrate and an Interdigitated Transducer (IDT) on a surface of the piezoelectric substrate. The IDT includes multiple fingers, each comprising a metal stack. The SAW filter further includes a cap layer on a surface of the IDT opposite the piezoelectric substrate and on areas of the surface of the piezoelectric substrate exposed by the IDT. The cap layer has a thickness in a range of and including 10 to 500 Angstroms and a high electrical resistivity (and thus a low electrical conductivity). For instance, in some embodiments, the electrical resistivity of the cap layer is greater than 10 kilo-ohm meters (K?·m). The SAW filter further includes an oxide overcoat layer on a surface of the cap layer opposite the IDT and the piezoelectric substrate.

Abstract: An acoustic wave device includes a piezoelectric layer, an interdigital transducer, and a slow wave propagation overlay over a portion of the interdigital transducer. By providing electrode fingers of the interdigital transducer such that a portion of the width thereof is dependent on an electrode period, a desirable wave mode may be maintained in the acoustic wave device. Further, by varying a width of the slow wave propagation overlay based on the electrode period, the desirable wave mode may be further maintained.

Abstract: Acoustic filtering circuitry includes a piezoelectric layer, a dielectric layer, a plurality of acoustic resonators, and a capacitor. The dielectric layer is over a surface of the piezoelectric layer. The plurality of acoustic resonators each includes a transducer on the surface of the piezoelectric layer such that the transducer is between the piezoelectric layer and the dielectric layer. The capacitor includes a first plate on the surface of the piezoelectric layer such that the first plate is between the piezoelectric layer and the dielectric layer and a second plate over the first plate such that the second plate and the first plate are separated by at least a portion of the dielectric layer.

Abstract: A surface acoustic wave (SAW) resonator is provided with reduced rattling at frequencies lower than the resonance value. The SAW resonator includes an interdigital transducer (IDT) on a piezoelectric substrate. The IDT includes a first set of interdigital electrodes distributed between and parallel to the first end of the IDT and the second end of the IDT and a second set of interdigital electrodes interleaved with the first plurality of interdigital electrodes. A first resonant cavity is formed a predetermined distance from the first end of the IDT, and a second resonant cavity is formed a predetermined distance from the second end of the IDT. Additionally, a radio frequency (RF) filter is provided that includes multiple SAW resonators that include the resonant cavities formed a predetermined distance from the first and second ends of the IDT. This RF filter may provide increased bandwidth and reduced insertion loss.

Abstract: Embodiments of a Surface Acoustic Wave (SAW) device, or filter, and methods of fabrication thereof are disclosed. In some embodiments, the SAW filter comprises a piezoelectric substrate and an Interdigitated Transducer (IDT) on a surface of the piezoelectric substrate. The IDT includes multiple fingers, each comprising a metal stack. The SAW filter further includes a cap layer on a surface of the IDT opposite the piezoelectric substrate and on areas of the surface of the piezoelectric substrate exposed by the IDT. The cap layer has a thickness in a range of and including 10 to 500 Angstroms and a high electrical resistivity (and thus a low electrical conductivity). For instance, in some embodiments, the electrical resistivity of the cap layer is greater than 10 kilo-ohm meters (K?·m). The SAW filter further includes an oxide overcoat layer on a surface of the cap layer opposite the IDT and the piezoelectric substrate.

Abstract: A frame housing green LEDs can be positioned adjacent to a lens in order to illuminate the lens at a glancing angle. The green light allows better visualization of particulates on a surface of the lens. The particulates can then be removed with a polymer solution applied to the lens. The polymer traps the particulates, and can be removed from the lens to remove the particulates.

Abstract: A surface acoustic wave (SAW) resonator is provided with reduced rattling at frequencies lower than the resonance value. The SAW resonator includes an interdigital transducer (IDT) on a piezoelectric substrate. The IDT includes a first set of interdigital electrodes distributed between and parallel to the first end of the IDT and the second end of the IDT and a second set of interdigital electrodes interleaved with the first plurality of interdigital electrodes. A first resonant cavity is formed a predetermined distance from the first end of the IDT, and a second resonant cavity is formed a predetermined distance from the second end of the IDT. Additionally, a radio frequency (RF) filter is provided that includes multiple SAW resonators that include the resonant cavities formed a predetermined distance from the first and second ends of the IDT. This RF filter may provide increased bandwidth and reduced insertion loss.

Abstract: Embodiments described herein may provide a temperature-compensated surface acoustic wave (TCSAW) device, a method of fabricating a TCSAW device, and a system incorporating a TCSAW device. The TCSAW device may include a pyroelectric substrate, a plurality of electrodes formed on a first surface of the pyroelectric substrate, an amorphous silicon layer formed over the plurality of electrodes, and a temperature compensating layer formed over the amorphous silicon layer.

Abstract: Embodiments described herein may provide a temperature-compensated surface acoustic wave (TCSAW) device, a method of fabricating a TCSAW device, and a system incorporating a TCSAW device. The TCSAW device may include a pyroelectric substrate, a plurality of electrodes formed on a first surface of the pyroelectric substrate, an amorphous silicon layer formed over the plurality of electrodes, and a temperature compensating layer formed over the amorphous silicon layer.

Abstract: In embodiments, a piezoelectric acoustic wave (PBAW) device may include a substrate and a resonator comprising a plurality of electrodes coupled with the surface of the substrate. A dielectric overcoat may be disposed over the substrate and the resonator. In embodiments, and electrode in the resonator electrode may have a width that is based at least in part on a period of the resonator. By selecting the width of the electrode based at least in part on the period of the resonator, a spurious-mode of the passband of the PBAW device may be suppressed.

Abstract: In embodiments, a piezoelectric acoustic wave (PBAW) device may include a substrate and a resonator comprising a plurality of electrodes coupled with the surface of the substrate. A dielectric overcoat may be disposed over the substrate and the resonator. In embodiments, and electrode in the resonator electrode may have a width that is based at least in part on a period of the resonator. By selecting the width of the electrode based at least in part on the period of the resonator, a spurious-mode of the passband of the PBAW device may be suppressed.

Abstract: Disclosed embodiments include a surface acoustic wave device having electrode period, electrode width, and/or ratio of electrode width to electrode period varied in a prescribed manner.

Abstract: Disclosed embodiments include a surface acoustic wave device having electrode period, electrode width, and/or ratio of electrode width to electrode period varied in a prescribed manner.

Abstract: A SAW resonator with improved temperature characteristics includes a single crystal piezoelectric substrate of symmetry 3 m, providing propagation of leaky waves with quasi-shear horizontal polarization and squared electromechanical coupling coefficient exceeding 5%. A SiOx overlay having a flattened surface covers the electrode pattern. Electrode thicknesses range from about 0.1% to about 10% of an acoustic wavelength and the SiOx thickness ranges between zero and 30% of an acoustic wavelength of a surface acoustic wave excited on the surface of the substrate. The piezoelectric substrate has an orientation defined by Euler angles (0±3°, ?, 0±3°), with angle ?=90°??? and rotation angle ??, which depends on material of a piezoelectric substrate and thicknesses of electrodes and SiOx overlay. Such orientations simultaneously combined with optimized thicknesses of electrodes and SiOx overlay provide for improved performance in RF applications with improved temperature characteristics.

Abstract: A surface acoustic wave device with improved temperature characteristics includes a piezoelectric substrate of a single crystal of symmetry 3m, providing propagation of a SAW having an electromechanical coupling factor exceeding 5%, an electrode pattern on a substrate surface forming a resonator, and a SiOx overlay covering the electrode pattern. An optimized thickness of the electrodes combined with an SiOx overlay provide improved performance in RF applications with improved temperature characteristics. To suppress spurious responses the SiOx thickness is varied depending upon the relative thickness and period of the electrodes. The electrode pattern forms resonators with the silicon oxide thickness over the electrodes inversely related to the period of the electrodes of the resonators.

Abstract: An acoustic wave device operable as a piston mode wave guide includes electrodes forming an interdigital transducer on a surface of the piezoelectric substrate, wherein each of the plurality of electrodes is defined as having a transversely extending center region and transversely opposing edge regions for guiding an acoustic wave longitudinally through the transducer. A Silicon Oxide overcoat covers the transducer and a Silicon Nitride layer covers the Silicon Oxide overcoat within only the center and edge regions. The thickness of the Silicon Nitride layer is sufficient for providing a frequency modification to the acoustic wave within the center region and is optimized with a positioning of a Titanium strip within each of the opposing edge regions. The Titanium strip reduces the acoustic wave velocity within the edge regions with the velocity in the edge regions being less than the wave velocity within the transducer center region.

Abstract: An acoustic wave device operable as a piston mode wave guide includes electrodes forming an interdigital transducer on a surface of the piezoelectric substrate, wherein each of the plurality of electrodes is defined as having a transversely extending center region and transversely opposing edge regions for guiding an acoustic wave longitudinally through the transducer. A Silicon Oxide overcoat covers the transducer and a Silicon Nitride layer covers the Silicon Oxide overcoat within only the center and edge regions. The thickness of the Silicon Nitride layer is sufficient for providing a frequency modification to the acoustic wave within the center region and is optimized with a positioning of a Titanium strip within each of the opposing edge regions. The Titanium strip reduces the acoustic wave velocity within the edge regions with the velocity in the edge regions being less than the wave velocity within the transducer center region.

Abstract: A piezoelectric boundary acoustic wave (PBAW) device includes a slotted dielectric body disposed over one surface of a piezoelectric body and electrodes forming an IDT at the interface between the piezoelectric body and the dielectric body. The thickness of the electrode is set so that the acoustic velocity of the boundary acoustic waves is less than acoustic waves propagating in the piezoelectric body.