Abstract: A magnetic storage device includes a network of planar magnetic cells in a vortex state, each cell's vortex core having a magnetization with either a first and second equilibrium position in opposite direction and perpendicular to the cellular plane, each of the two positions representing binary information. The device includes conductive lines for writing binary information stored in the cells, including conductive lines for selectively applying, in the vicinity of each cell, a first bias static magnetic field roughly perpendicular to the cellular plane and a linearly polarized radio frequency magnetic field roughly parallel to the device. The described device also includes conductive lines for reading preferably resonantly the polarity using a selective transport measurement between two intersecting electrodes by guiding the current lines through the region around the vortex core by means of a point contact.

Abstract: A magnetic storage device includes a network of planar magnetic cells in a vortex state, each cell's vortex core having a magnetization with either a first and second equilibrium position in opposite direction and perpendicular to the cellular plane, each of the two positions representing binary information. The device includes means for writing binary information stored in the cells, including means for selectively applying, in the vicinity of each cell, a first bias static magnetic field roughly perpendicular to the cellular plane and a linearly polarized radio frequency magnetic field roughly parallel to the device. The described device also includes means for reading preferably resonantly the polarity using a selective transport measurement between two intersecting electrodes by guiding the current lines through the region around the vortex core by means of a point contact.