Abstract: According to one aspect, the invention relates to an element for quantum photodetection of an incident radiation in a spectral band centered around a central wavelength ?0, having a front surface intended for receiving said radiation, and including: a stack of layers of semiconductor material forming a PN or PIN junction and including at least one layer made of an absorbent semiconductor material having a cut-off wavelength ?0>?0, the stack of layers of semiconductor material forming a resonant optical cavity; and a structure for coupling the incident radiation with the optical cavity such as to form a resonance at the central wavelength ?0 allowing the absorption of more than 80% in the layer of absorbent semiconductor material at said central wavelength, and an absence of resonance at the radiative wavelength ?rad, wherein the radiative wavelength ?rad is the wavelength for which, at operating temperature, the radiative recombination rate is the highest.

Abstract: According to one aspect, the invention relates to an element for quantum photodetection of an incident radiation in a spectral band centred around a central wavelength ?0, having a front surface intended for receiving said radiation, and including: a stack of layers of semiconductor material forming a PN or PIN junction and including at least one layer made of an absorbent semiconductor material having a cut-off wavelength ?0>?0, the stack of layers of semiconductor material forming a resonant optical cavity; and a structure for coupling the incident radiation with the optical cavity such as to form a resonance at the central wavelength ?0 allowing the absorption of more than 80% in the layer of absorbent semiconductor material at said central wavelength, and an absence of resonance at the radiative wavelength ?rad, wherein the radiative wavelength ?rad is the wavelength for which, at operating temperature, the radiative recombination rate is the highest.