Abstract: One example includes an integrated circulator system comprising a junction. The junction includes a first port, a second port, and a third port. The junction also includes a substrate material layer on which the first, second, and third ports are provided. The junction also includes a magnetic material layer coupled to the substrate layer. The junction further includes a resonator coupled to the first, second, and third ports to provide signal transmission from the first port to the second port and from the second port to the third port based on a magnetic field provided by the magnetic material layer.

Abstract: An apparatus for nano-imprinting using a high-pressure crystal phase transformation, includes: a stamp configured to perform nano-imprinting, the stamp comprising a pedestal and a base, wherein the pedestal is shaped to match an intended shape of a device to be fabricated; a tool chuck physically connected to the stamp, the tool chuck configured to allow a user to apply one or more of pressure and temperature to the film; a substrate upon which the device can be fabricated; a thin film physically connected to the substrate; and a tool stage physically connected to the substrate, the tool stage configured to allow a user to apply one or more of pressure and temperature to the film.

Abstract: An exemplary electronic assembly includes a planar semiconductor substrate having a front side with semiconductor components and a back side that includes one recess extending inwardly. One of an isolator and circulator is formed as part of the planar semiconductor substrate and includes one magnetic ferrite disk mounted within the one recess within the thickness of the planar semiconductor substrate. The one of an isolator and circulator has at least input and output ports. The input port is disposed to receive a radio frequency signal to be coupled with low insertion loss to the output port while providing high insertion loss to other radio frequency signals attempting to propagate from the output port to the input port.

Abstract: An exemplary electronic assembly includes a planar semiconductor substrate having a front side with semiconductor components and a back side that includes one recess extending inwardly. One of an isolator and circulator is formed as part of the planar semiconductor substrate and includes one magnetic ferrite disk mounted within the one recess within the thickness of the planar semiconductor substrate. The one of an isolator and circulator has at least input and output ports. The input port is disposed to receive a radio frequency signal to be coupled with low insertion loss to the output port while providing high insertion loss to other radio frequency signals attempting to propagate from the output port to the input port.

Abstract: A GaN high electron mobility transistor (HEMT) device having a silicon carbide substrate including a top surface and a bottom surface, where the substrate further includes a via formed through the bottom surface and into the substrate. The device includes a plurality of epitaxial layers provided on the top surface of the substrate, a plurality of device layers provided on the epitaxial layers, and a diamond layer provided within the via.

Abstract: A GaN high electron mobility transistor (HEMT) device having a silicon carbide substrate including a top surface and a bottom surface, where the substrate further includes a via formed through the bottom surface and into the substrate. The device includes a plurality of epitaxial layers provided on the top surface of the substrate, a plurality of device layers provided on the epitaxial layers, and a diamond layer provided within the via.