Abstract: An assembly and adhesive layer for semiconductor components is arranged between a silicon support (submount) and an electronic functional element for the formation of an electrically-conducting connection between the silicon support and the functional element. The assembly and adhesive layer are arranged on the support. The assembly and adhesive layer are made from a Ti/TiN layer (6), applied to an aluminum contact surface (5) of the silicon support (1), by means of a deposition method. The aluminum contact surface (5) is located on a landing pad (2) on the silicon support (1).

Abstract: An optical transmitting and/or receiving device has a semiconductor component with a first contact for connecting to a reference voltage and a second contact for obtaining or supplying a high-frequency electrical signal. There is also an electrically conducting carrier substrate with a first surface and a second surface. The semiconductor component is configured on the first surface of the carrier substrate. The second surface of the carrier substrate has a metallization that can be connected to a reference voltage applied by an electrical path through the carrier substrate to a first contacting region of the first surface of the carrier substrate. The first contact of the semiconductor component is electrically connected to the first contacting region.

Abstract: An assembly and adhesive layer for semiconductor components is arranged between a silicon support (submount) and an electronic functional element for the formation of an electrically-conducting connection between the silicon support and the functional element. The assembly and adhesive layer are arranged on the support. The assembly and adhesive layer are made from a Ti/TiN layer (6), applied to an aluminum contact surface (5) of the silicon support (1), by means of a deposition method. The aluminum contact surface (5) is located on a landing pad (2) on the silicon support (1).

Abstract: The invention relates to an optical transmitting and/or receiving device, having: a semiconductor component with a first contact for connection with a reference voltage and a second contact for applying or leading away a high-frequency electrical signal; an electrically conducting carrier substrate with a first surface and a second surface, the semiconductor component being arranged on the first surface of the carrier substrate, the second surface of the carrier substrate having a metallization which can be connected to the reference voltage, and the reference voltage being applied by an electrical path through the carrier substrate to a first contacting region of the first surface of the carrier substrate, and the first contact of the semiconductor component being electrically connected to the first contacting region.