Abstract: Methods for removing impurities from precursors and related systems are provided. A method comprises at least one thermal cycle. The at least one thermal cycle comprises one or more of the following steps: heating a vessel comprising a precursor and at least one impurity to a temperature for a duration sufficient to vaporize at least a portion of the at least one impurity; measuring a vapor pressure within the vessel to obtain a measured vapor pressure and comparing the measured vapor pressure to a set point vapor pressure; and when the measured vapor pressure is above or within the set point vapor pressure, removing, from the vessel, at least a portion of a vapor comprising the at least one impurity. Other methods and systems are provided herein.

Abstract: Diffuser plates in vaporizers, and related systems and methods, are provided. A vaporizer comprises a vessel having an outlet. The vessel contains or is configured to contain a vaporizable precursor that, when vaporized, produces a precursor vapor. The vessel discharges or is configured to discharge the precursor vapor through the outlet. The vaporizer includes a diffuser located within the vessel, between the vaporizable precursor and the outlet. The diffuser has a first surface, a second surface opposite the first surface, and a plurality of holes extending from the first surface of the diffuser through to the second surface of the diffuser.

Abstract: High purity molybdenum-containing precursors and related systems and methods are provided. A precursor delivery system comprises a vaporizer vessel that is configured to contain a vaporizable precursor that, when vaporized, produces a precursor vapor. The precursor delivery system comprises at least one protective surface treatment. The at least one protective surface treatment covers a sufficient amount of at least one gas-exposed surface of the precursor delivery system to reduce an amount of at least one contaminant in the precursor vapor as compared to a precursor vapor produced by a precursor delivery system without the at least one protective surface treatment.

Abstract: A precursor vessel comprises a hafnium halide precursor. The hafnium halide precursor comprises less than 1 ppm of at least one impurity. The at least one impurity comprises at least one of a titanium contaminant, a chromium contaminant, an aluminum contaminant, an iron contaminant, or any combination thereof. Related systems and related methods are also provided, including, for example and without limitation, systems for delivery of vapor precursors, methods for purifying a precursor, and the like.

Abstract: Molybdenum precursors with high purity and methods for purifying molybdenum precursors are provided. A method comprises obtaining a first vessel comprising a solid reagent; vaporizing at least a portion of the solid reagent to produce a vapor comprising a MoCl5 vapor and a molybdenum impurity vapor; flowing at least a portion of the MoCl5 vapor and at least a portion of the molybdenum impurity vapor to a second vessel; condensing at least a portion of the MoCl5 vapor in the second vessel to separate the MoCl5 from the molybdenum impurity; and removing at least a portion of the molybdenum impurity vapor from the second vessel to obtain a MoCl5 precursor.

Abstract: A system including a vessel for containing a fill material and a vibration source connected to the vessel. The vibration source can increase a bulk density of the fill material. A fill material ratio can be defined as a particle density of the fill material divided by the bulk density of the fill material after vibration. After the vibration source increases the bulk density of the fill material, the fill material ratio can range from about 0.15 to about 0.75.

Abstract: A system including a chemical supply cabinet (e.g., such as a chemical supply cabinet configured to contain an ampoule), a module configured to modify a surface, and a control unit connected to the module, wherein the control unit is configured to direct the modifying of the surface.

Abstract: Systems and methods for controlling precursor delivery. The systems and methods may comprise a precursor delivery vessel in fluid communication with a gas flow line. The precursor delivery vessel may comprise at least one tray containing a vaporizable precursor. An amount of thermal energy may be supplied to the at least one tray in an amount sufficient to vaporize the vaporizable precursor. The vaporized precursor may be dispensed from the precursor delivery vessel to the gas flow line. The amount of thermal energy supplied to the at least one tray may be adjusted sufficient to maintain a pressure of the vaporized precursor, in the gas flow line, within a pressure range.

Abstract: A device which can be exposed to chemical vapors, such as a molybdenum vapor, a tungsten vapor, or any combination thereof, which has a coating covering at least a portion thereof. The coating reduces or inhibits mass change at an outer surface of the device from exposure to the vapor. In certain situations, the mass change is a mass gain, and the coating reduces or inhibits the mass gain of equal to or less than 1×10?5 g mm?2.

Abstract: The invention provides certain molybdenum-containing compounds which are believed to be useful in the vapor deposition of molybdenum-containing films onto the surface of various microelectronic device substrates. In one aspect, the invention provides a process for depositing a molybdenum-containing film onto a microelectronic device substrate, which comprises exposing the substrate, in a reaction zone, to a compound of Formula (I) as described herein, under vapor deposition conditions.