Patents by Inventor Benjamin Schmiege

Benjamin Schmiege has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20200148712
    Abstract: Metal coordination complexes comprising a metal atom coordinated to at least one diazabutadiene ligand having a structure represented by: where each R is independently a C1-C13 alkyl or aryl group and each R? is independently H, C1-C10 alkyl or aryl group are described. Processing methods using the metal coordination complexes are also described.
    Type: Application
    Filed: January 20, 2020
    Publication date: May 14, 2020
    Applicant: Applied Materials, Inc.
    Inventors: Benjamin Schmiege, Jeffrey W. Anthis, David Thompson
  • Patent number: 10643838
    Abstract: Methods of forming a lanthanide-containing film comprising exposing a substrate surface to a lanthanide-containing precursor, a metal halide and a nitrogen precursor are described. The lanthanide-containing precursor has the general formula (CpRx)2Ln(N,N-dialkylamidinate) where Cp is a cyclopentadienyl or 6, 7 or 8 membered ring, R is H, C1-C4 alkyl, x=1 to number of C in Cp, alkyl is C1 to C4 alkyl. The metal halide deposits metal halide on the substrate surface and reacts with lanthanide-containing species to convert the lanthanide-containing species to a lanthanide halide. The nitrogen-containing precursor forms a lanthanide-metal-nitride film on the substrate surface.
    Type: Grant
    Filed: June 20, 2018
    Date of Patent: May 5, 2020
    Assignee: Applied Materials, Inc.
    Inventors: Benjamin Schmiege, Jeffrey W. Anthis, David Thompson
  • Patent number: 10643840
    Abstract: Methods of depositing a film selectively onto a first substrate surface relative to a second substrate surface are described. The methods include exposing a substrate to a blocking molecule to selectively deposit a blocking layer on the first surface. A layer is selectively formed on the second surface and defects of the layer are formed on the blocking layer. The defects are removed from the blocking layer on the first surface.
    Type: Grant
    Filed: September 12, 2018
    Date of Patent: May 5, 2020
    Assignee: Applied Materials, Inc.
    Inventors: Jeffrey W. Anthis, Chang Ke, Pratham Jain, Benjamin Schmiege, Guoqiang Jian, Michael S. Jackson, Lei Zhou, Paul F. Ma, Liqi Wu
  • Patent number: 10633743
    Abstract: A system and method for removing metal from a substrate in a controlled manner is disclosed. The system includes a chamber, with one or more gas inlets to allow the flow of gasses into the chamber, at least one exhaust pump, to exhaust gasses from the chamber, and a heater, capable of modifying the temperature of the chamber. In some embodiments, one or more gasses are introduced into the chamber at a first temperature. The atoms in these gasses chemically react with the metal on the surface of the substrate to form a removable compound. The gasses are then exhausted from the chamber, leaving the removable compound on the surface of the substrate. The temperature of the chamber is then elevated to a second temperature, greater than the sublimation temperature of the removable compound. This increased temperature allows the removable compound to become gaseous and be exhausted from the chamber.
    Type: Grant
    Filed: May 16, 2018
    Date of Patent: April 28, 2020
    Assignee: Varian Semiconductor Equipment Associates, Inc.
    Inventors: Tsung-Liang Chen, Benjamin Schmiege, Jeffrey W. Anthis, Glen Gilchrist
  • Patent number: 10577386
    Abstract: Metal coordination complexes comprising a metal atom coordinated to at least one diazabutadiene ligand having a structure represented by: where each R is independently a C1-C13 alkyl or aryl group and each R? is independently H, C1-C10 alkyl or aryl group are described. Processing methods using the metal coordination complexes are also described.
    Type: Grant
    Filed: December 5, 2017
    Date of Patent: March 3, 2020
    Assignee: Applied Materials, Inc.
    Inventors: Benjamin Schmiege, Jeffrey W. Anthis, David Thompson
  • Publication number: 20190385849
    Abstract: Processing methods comprising selectively orthogonally growing a first material through a mask to provide an expanded first material are described. The mask can be removed leaving the expanded first material extending orthogonally from the surface of the first material. Further processing can create a self-aligned via.
    Type: Application
    Filed: July 25, 2019
    Publication date: December 19, 2019
    Inventors: David Thompson, Benjamin Schmiege, Jeffrey W. Anthis, Abhijit Basu Mallick, Susmit Singha Roy, Ziqing Duan, Yihong Chen, Kelvin Chan, Srinivas Gandikota
  • Patent number: 10465294
    Abstract: Methods are described herein for etching metal films which are difficult to volatize. The methods include exposing a metal film to a chlorine-containing precursor (e.g. Cl2). Chlorine is then removed from the substrate processing region. A carbon-and-nitrogen-containing precursor (e.g. TMEDA) is delivered to the substrate processing region to form volatile metal complexes which desorb from the surface of the metal film. The methods presented remove metal while very slowly removing the other exposed materials. A thin metal oxide layer may be present on the surface of the metal layer, in which case a local plasma from hydrogen may be used to remove the oxygen or amorphize the near surface region, which has been found to increase the overall etch rate.
    Type: Grant
    Filed: April 11, 2016
    Date of Patent: November 5, 2019
    Assignee: Applied Materials, Inc.
    Inventors: Xikun Wang, Jie Liu, Anchuan Wang, Nitin K. Ingle, Jeffrey W. Anthis, Benjamin Schmiege
  • Patent number: 10410865
    Abstract: Processing methods comprising selectively orthogonally growing a first material through a mask to provide an expanded first material are described. The mask can be removed leaving the expanded first material extending orthogonally from the surface of the first material. Further processing can create a self-aligned via.
    Type: Grant
    Filed: September 12, 2018
    Date of Patent: September 10, 2019
    Assignee: Applied Materials, Inc.
    Inventors: David Thompson, Benjamin Schmiege, Jeffrey W. Anthis, Abhijit Basu Mallick, Susmit Singha Roy, Ziqing Duan, Yihong Chen, Kelvin Chan, Srinivas Gandikota
  • Patent number: 10323054
    Abstract: Metal coordination complexes comprising a metal atom coordinated to at least one aza-allyl ligand having the structure represented by: where each R1-R4 are independently selected from the group consisting of H, branched or unbranched C1-C6 alkyl, branched or unbranched C1-C6 alkenyl, branched or unbranched C1-C6 alkynyl, cycloalkyl groups having in the range of 1 to 6 carbon atoms, silyl groups and halogens. Methods of depositing a film using the metal coordination complex and a suitable reactant are also described.
    Type: Grant
    Filed: November 28, 2017
    Date of Patent: June 18, 2019
    Assignee: Applied Materials, Inc.
    Inventors: Benjamin Schmiege, Jeffrey W. Anthis, David Thompson
  • Patent number: 10297462
    Abstract: Provided are methods for etching films comprising transition metals. Certain methods involve activating a substrate surface comprising at least one transition metal, wherein activation of the substrate surface comprises exposing the substrate surface to heat, a plasma, an oxidizing environment, or a halide transfer agent to provide an activated substrate surface; and exposing the activated substrate surface to a reagent comprising a Lewis base or pi acid to provide a vapor phase coordination complex comprising one or more atoms of the transition metal coordinated to one or more ligands from the reagent. Certain other methods provide selective etching from a multi-layer substrate comprising two or more of a layer of Co, a layer of Cu and a layer of Ni.
    Type: Grant
    Filed: October 20, 2017
    Date of Patent: May 21, 2019
    Assignee: Applied Materials Inc.
    Inventors: Jeffrey W. Anthis, Benjamin Schmiege, David Thompson
  • Patent number: 10242885
    Abstract: A process to selectively etch a substrate surface comprising multiple metal oxides comprising exposing the substrate surface to a halogenation agent, and then exposing the substrate surface to a ligand transfer agent. The etch rate of the metals in the multiple metal oxides is substantially uniform.
    Type: Grant
    Filed: May 26, 2017
    Date of Patent: March 26, 2019
    Assignee: Applied Materials, Inc.
    Inventors: Jeffrey W. Anthis, David Thompson, Benjamin Schmiege
  • Patent number: 10233547
    Abstract: Provided are methods for etching films comprising transition metals which help to minimize higher etch rates at the grain boundaries of polycrystalline materials. Certain methods pertain to amorphization of the polycrystalline material, other pertain to plasma treatments, and yet other pertain to the use of small doses of halide transfer agents in the etch process.
    Type: Grant
    Filed: February 19, 2018
    Date of Patent: March 19, 2019
    Assignee: Applied Materials, Inc.
    Inventors: Benjamin Schmiege, Nitin K. Ingle, Srinivas D. Nemani, Jeffrey W. Anthis, Xikun Wang, Jie Liu, David Benjaminson
  • Publication number: 20190080904
    Abstract: Methods of depositing a film selectively onto a first substrate surface relative to a second substrate surface are described. The methods include exposing a substrate to a blocking molecule to selectively deposit a blocking layer on the first surface. A layer is selectively formed on the second surface and defects of the layer are formed on the blocking layer. The defects are removed from the blocking layer on the first surface.
    Type: Application
    Filed: September 12, 2018
    Publication date: March 14, 2019
    Inventors: Jeffrey W. Anthis, Chang Ke, Pratham Jain, Benjamin Schmiege, Guoqiang Jian, Michael S. Jackson, Lei Zhou, Paul F. Ma, Liqi Wu
  • Publication number: 20190062916
    Abstract: Methods for depositing a film comprising exposing a substrate surface to a bis-amidinate metal precursor and a co-reactant to form a metal containing film are described. The bis-amidinate metal precursor comprises a metal atom comprising one or more lanthanide.
    Type: Application
    Filed: August 28, 2018
    Publication date: February 28, 2019
    Inventors: Benjamin Schmiege, Jeffrey W. Anthis
  • Publication number: 20190017171
    Abstract: Methods for depositing a yttrium-containing film through an atomic layer deposition process are described. Some embodiments of the disclosure utilize a plasma-enhanced atomic layer deposition process. Also described is an apparatus for performing the atomic layer deposition of the yttrium containing films.
    Type: Application
    Filed: July 13, 2017
    Publication date: January 17, 2019
    Inventors: Lakmal C. Kalutarage, Mark Saly, Thomas Knisley, Benjamin Schmiege, David Thompson
  • Publication number: 20190013202
    Abstract: Processing methods comprising selectively orthogonally growing a first material through a mask to provide an expanded first material are described. The mask can be removed leaving the expanded first material extending orthogonally from the surface of the first material. Further processing can create a self-aligned via.
    Type: Application
    Filed: September 12, 2018
    Publication date: January 10, 2019
    Inventors: David Thompson, Benjamin Schmiege, Jeffrey W. Anthis, Abhijit Basu Mallick, Susmit Singha Roy, Ziqing Duan
  • Publication number: 20180366322
    Abstract: Methods of forming a lanthanide-containing film comprising exposing a substrate surface to a lanthanide-containing precursor, a metal halide and a nitrogen precursor are described. The lanthanide-containing precursor has the general formula (CpRx)2Ln(N,N-dialkylamidinate) where Cp is a cyclopentadienyl or 6, 7 or 8 membered ring, R is H, C1-C4 alkyl, x=1 to number of C in Cp, alkyl is C1 to C4 alkyl. The metal halide deposits metal halide on the substrate surface and reacts with lanthanide-containing species to convert the lanthanide-containing species to a lanthanide halide. The nitrogen-containing precursor forms a lanthanide-metal-nitride film on the substrate surface.
    Type: Application
    Filed: June 20, 2018
    Publication date: December 20, 2018
    Inventors: Benjamin Schmiege, Jeffrey W. Anthis, David Thompson
  • Publication number: 20180342403
    Abstract: A process to selectively etch a substrate surface comprising multiple metal oxides comprising exposing the substrate surface to a halogenation agent, and then exposing the substrate surface to a ligand transfer agent. The etch rate of the metals in the multiple metal oxides is substantially uniform.
    Type: Application
    Filed: May 26, 2017
    Publication date: November 29, 2018
    Inventors: Jeffrey W. Anthis, David Thompson, Benjamin Schmiege
  • Patent number: 10083834
    Abstract: Processing methods comprising selectively orthogonally growing a first material through a mask to provide an expanded first material are described. The mask can be removed leaving the expanded first material extending orthogonally from the surface of the first material. Further processing can create a self-aligned via.
    Type: Grant
    Filed: September 28, 2017
    Date of Patent: September 25, 2018
    Assignee: APPLIED MATERIALS, INC.
    Inventors: David Thompson, Benjamin Schmiege, Jeffrey W. Anthis, Abhijit Basu Mallick, Susmit Singha Roy, Ziqing Duan
  • Publication number: 20180265988
    Abstract: A system and method for removing metal from a substrate in a controlled manner is disclosed. The system includes a chamber, with one or more gas inlets to allow the flow of gasses into the chamber, at least one exhaust pump, to exhaust gasses from the chamber, and a heater, capable of modifying the temperature of the chamber. In some embodiments, one or more gasses are introduced into the chamber at a first temperature. The atoms in these gasses chemically react with the metal on the surface of the substrate to form a removable compound. The gasses are then exhausted from the chamber, leaving the removable compound on the surface of the substrate. The temperature of the chamber is then elevated to a second temperature, greater than the sublimation temperature of the removable compound. This increased temperature allows the removable compound to become gaseous and be exhausted from the chamber.
    Type: Application
    Filed: May 16, 2018
    Publication date: September 20, 2018
    Inventors: Tsung-Liang Chen, Benjamin Schmiege, Jeffrey W. Anthis, Glen Gilchrist