Abstract: A method for producing a micromechanical device having inclined optical windows, and a corresponding micromechanical device are described. The production method includes: providing a first substrate having a front side and a rear side; forming a plurality of spaced-apart through holes in the first substrate which are arranged along a plurality of spaced-apart rows in the first substrate; forming a respective continuous beveled groove along each of the rows, the grooves defining a seat for the inclined optical windows; and inserting the optical windows into the grooves above the through holes.

Abstract: A method for producing a micromechanical device having inclined optical windows, and a corresponding micromechanical device are described. The production method includes: providing a first substrate having a front side and a rear side; forming a plurality of spaced-apart through holes in the first substrate which are arranged along a plurality of spaced-apart rows in the first substrate; forming a respective continuous beveled groove along each of the rows, the grooves defining a seat for the inclined optical windows; and inserting the optical windows into the grooves above the through holes.

Abstract: A method for forming a cavity in a silicon substrate, a surface of the silicon substrate having a tilting angle relative to a first plane of the silicon substrate, and the first plane being a {111} plane of the silicon substrate, and situation of an etching mask on the surface of the silicon substrate. The etching mask has a retarding structure that protrudes into the mask opening, and a first etching projection region. All further edges of the mask opening outside the first etching projection region are situated essentially parallel to {111} planes of the silicon substrate. The method includes an anisotropic etching of the silicon substrate during a defined etching duration. An etching rate in the <111> directions of the silicon substrate is lower than in other spatial directions, and the first retarding structure is undercut in a first undercut direction going out from the first etching projection region.

Abstract: An actuator device and a method for tilting an actuator device. The method includes the steps: conducting electrical current through an electrical conduction device, which is guided via a tilting device of the actuator device, within a first magnetic field that is generated by a permanent magnet device of the actuator device, so that an actuator element of the tilting device is tilted along a first tilting axis as the result of a Lorentz force; and generating a second magnetic field by an electromagnet device of the actuator device in the area of the permanent magnet device, so that the tilting device is tilted along a second tilting axis as the result of magnetic attraction and repulsion.

Abstract: A method for forming a cavity in a silicon substrate, a surface of the silicon substrate having a tilting angle relative to a first plane of the silicon substrate, and the first plane being a {111} plane of the silicon substrate, and situation of an etching mask on the surface of the silicon substrate. The etching mask has a retarding structure that protrudes into the mask opening, and a first etching projection region. All further edges of the mask opening outside the first etching projection region are situated essentially parallel to {111} planes of the silicon substrate. The method includes an anisotropic etching of the silicon substrate during a defined etching duration. An etching rate in the <111> directions of the silicon substrate is lower than in other spatial directions, and the first retarding structure is undercut in a first undercut direction going out from the first etching projection region.

Abstract: A method for forming a cavity in a silicon substrate, a surface of the silicon substrate having a tilting angle relative to a first plane of the silicon substrate, and the first plane being a {111} plane of the silicon substrate, and situation of an etching mask on the surface of the silicon substrate. The etching mask has a retarding structure that protrudes into the mask opening, and a first etching projection region. All further edges of the mask opening outside the first etching projection region are situated essentially parallel to {111} planes of the silicon substrate. The method includes an anisotropic etching of the silicon substrate during a defined etching duration. An etching rate in the <111> directions of the silicon substrate is lower than in other spatial directions, and the first retarding structure is undercut in a first undercut direction going out from the first etching projection region.

Abstract: A method for manufacturing a micromechanical device includes providing a silicon substrate having a front side and a rear side, where a first normal of the front side deviates by a first angle from the <111> direction of the silicon substrate; forming in the front side first and second trenches that are spaced apart from and essentially parallel to each other, with the first and second trenches extending along a direction of the deviation; forming on the front side a first etching mask that covers the front side except for a first opening area between the first and second trenches; and anisotropically etching the front side using the etching mask, thereby forming in the opening area an oblique surface having a second angle to the first normal, which approximately corresponds to the first angle.

Abstract: An actuator device and a method for tilting an actuator device. The method includes the steps: conducting electrical current through an electrical conduction device, which is guided via a tilting device of the actuator device, within a first magnetic field that is generated by a permanent magnet device of the actuator device, so that an actuator element of the tilting device is tilted along a first tilting axis as the result of a Lorentz force; and generating a second magnetic field by an electromagnet device of the actuator device in the area of the permanent magnet device, so that the tilting device is tilted along a second tilting axis as the result of magnetic attraction and repulsion.

Abstract: A manufacturing method for a micromechanical device including an inclined optical window and a corresponding micromechanical device. The method includes: providing a first substrate having front and back sides and a recess; applying a second substrate on the front side, the second substrate being thermally deformable and having a first through hole above the recess which has a smaller lateral extension than the recess; forming a flap area on the second substrate above/below the first through hole which is situated in a first position with respect to the first substrate; thermally deforming the second substrate, the flap area being moved into a second position within the recess which is inclined with respect to the first position and optionally subsided into the recess; removing the flap area from the second substrate; and attaching the optical window on the second substrate above/below the first through hole in the second inclined position.

Abstract: A production method for a wafer equipped with transparent plates includes: formation of a row of through-holes in a wafer; formation of at least one strip-shaped recess in a wafer surface, each of the through-holes of the same row intersecting partly with the respectively associated strip-shaped recess; an uninterrupted groove being formed in each intermediate region between two adjacent through-holes of the same row, the floor surface of the groove being oriented so as to be inclined relative to the wafer surface by an angle of inclination greater than 0° and less than 90°; and covering at least one through-hole with at least one transparent plate made of at least one material transparent to at least a sub-spectrum of electromagnetic radiation.

Abstract: A method for forming a cavity in a silicon substrate, a surface of the silicon substrate having a tilting angle relative to a first plane of the silicon substrate, and the first plane being a {111} plane of the silicon substrate, and situation of an etching mask on the surface of the silicon substrate. The etching mask has a retarding structure that protrudes into the mask opening, and a first etching projection region. All further edges of the mask opening outside the first etching projection region are situated essentially parallel to {111} planes of the silicon substrate. The method includes an anisotropic etching of the silicon substrate during a defined etching duration. An etching rate in the <111> directions of the silicon substrate is lower than in other spatial directions, and the first retarding structure is undercut in a first undercut direction going out from the first etching projection region.

Abstract: A production method for a wafer equipped with transparent plates includes: formation of a row of through-holes in a wafer; formation of at least one strip-shaped recess in a wafer surface, each of the through-holes of the same row intersecting partly with the respectively associated strip-shaped recess; an uninterrupted groove being formed in each intermediate region between two adjacent through-holes of the same row, the floor surface of the groove being oriented so as to be inclined relative to the wafer surface by an angle of inclination greater than 0° and less than 90°; and covering at least one through-hole with at least one transparent plate made of at least one material transparent to at least a sub-spectrum of electromagnetic radiation.