Patents by Inventor Benjamin Steuer

Benjamin Steuer has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20200391998
    Abstract: A method for producing a micromechanical device having inclined optical windows, and a corresponding micromechanical device are described. The production method includes: providing a first substrate having a front side and a rear side; forming a plurality of spaced-apart through holes in the first substrate which are arranged along a plurality of spaced-apart rows in the first substrate; forming a respective continuous beveled groove along each of the rows, the grooves defining a seat for the inclined optical windows; and inserting the optical windows into the grooves above the through holes.
    Type: Application
    Filed: March 7, 2019
    Publication date: December 17, 2020
    Inventors: Benjamin Steuer, Stefan Pinter
  • Patent number: 10840107
    Abstract: A method for forming a cavity in a silicon substrate, a surface of the silicon substrate having a tilting angle relative to a first plane of the silicon substrate, and the first plane being a {111} plane of the silicon substrate, and situation of an etching mask on the surface of the silicon substrate. The etching mask has a retarding structure that protrudes into the mask opening, and a first etching projection region. All further edges of the mask opening outside the first etching projection region are situated essentially parallel to {111} planes of the silicon substrate. The method includes an anisotropic etching of the silicon substrate during a defined etching duration. An etching rate in the <111> directions of the silicon substrate is lower than in other spatial directions, and the first retarding structure is undercut in a first undercut direction going out from the first etching projection region.
    Type: Grant
    Filed: July 23, 2019
    Date of Patent: November 17, 2020
    Assignee: Robert Bosch GmbH
    Inventors: Simon Armbruster, Benjamin Steuer, Stefan Pinter, Dietmar Haberer, Jochen Tomaschko
  • Patent number: 10775610
    Abstract: An actuator device and a method for tilting an actuator device. The method includes the steps: conducting electrical current through an electrical conduction device, which is guided via a tilting device of the actuator device, within a first magnetic field that is generated by a permanent magnet device of the actuator device, so that an actuator element of the tilting device is tilted along a first tilting axis as the result of a Lorentz force; and generating a second magnetic field by an electromagnet device of the actuator device in the area of the permanent magnet device, so that the tilting device is tilted along a second tilting axis as the result of magnetic attraction and repulsion.
    Type: Grant
    Filed: July 18, 2016
    Date of Patent: September 15, 2020
    Assignee: Robert Bosch GmbH
    Inventors: Benjamin Steuer, Frederic Njikam Njimonzie, Joerg Muchow, Rainer Straub, Stefan Pinter
  • Publication number: 20190348300
    Abstract: A method for forming a cavity in a silicon substrate, a surface of the silicon substrate having a tilting angle relative to a first plane of the silicon substrate, and the first plane being a {111} plane of the silicon substrate, and situation of an etching mask on the surface of the silicon substrate. The etching mask has a retarding structure that protrudes into the mask opening, and a first etching projection region. All further edges of the mask opening outside the first etching projection region are situated essentially parallel to {111} planes of the silicon substrate. The method includes an anisotropic etching of the silicon substrate during a defined etching duration. An etching rate in the <111> directions of the silicon substrate is lower than in other spatial directions, and the first retarding structure is undercut in a first undercut direction going out from the first etching projection region.
    Type: Application
    Filed: July 23, 2019
    Publication date: November 14, 2019
    Inventors: Simon Armbruster, Benjamin Steuer, Stefan Pinter, Dietmar Haberer, Jochen Tomaschko
  • Patent number: 10431474
    Abstract: A method for forming a cavity in a silicon substrate, a surface of the silicon substrate having a tilting angle relative to a first plane of the silicon substrate, and the first plane being a {111} plane of the silicon substrate, and situation of an etching mask on the surface of the silicon substrate. The etching mask has a retarding structure that protrudes into the mask opening, and a first etching projection region. All further edges of the mask opening outside the first etching projection region are situated essentially parallel to {111} planes of the silicon substrate. The method includes an anisotropic etching of the silicon substrate during a defined etching duration. An etching rate in the <111> directions of the silicon substrate is lower than in other spatial directions, and the first retarding structure is undercut in a first undercut direction going out from the first etching projection region.
    Type: Grant
    Filed: May 29, 2015
    Date of Patent: October 1, 2019
    Assignee: Robert Bosch GmbH
    Inventors: Simon Armbruster, Benjamin Steuer, Stefan Pinter, Dietmar Haberer, Jochen Tomaschko
  • Publication number: 20180257932
    Abstract: A method for manufacturing a micromechanical device includes providing a silicon substrate having a front side and a rear side, where a first normal of the front side deviates by a first angle from the <111> direction of the silicon substrate; forming in the front side first and second trenches that are spaced apart from and essentially parallel to each other, with the first and second trenches extending along a direction of the deviation; forming on the front side a first etching mask that covers the front side except for a first opening area between the first and second trenches; and anisotropically etching the front side using the etching mask, thereby forming in the opening area an oblique surface having a second angle to the first normal, which approximately corresponds to the first angle.
    Type: Application
    Filed: March 7, 2018
    Publication date: September 13, 2018
    Inventors: Benjamin Steuer, Christoph Schelling, Daniel Pantel, Stefan Pinter
  • Publication number: 20180252912
    Abstract: An actuator device and a method for tilting an actuator device. The method includes the steps: conducting electrical current through an electrical conduction device, which is guided via a tilting device of the actuator device, within a first magnetic field that is generated by a permanent magnet device of the actuator device, so that an actuator element of the tilting device is tilted along a first tilting axis as the result of a Lorentz force; and generating a second magnetic field by an electromagnet device of the actuator device in the area of the permanent magnet device, so that the tilting device is tilted along a second tilting axis as the result of magnetic attraction and repulsion.
    Type: Application
    Filed: July 18, 2016
    Publication date: September 6, 2018
    Inventors: Benjamin Steuer, Frederic Njikam Njimonzie, Joerg Muchow, Rainer Straub, Stefan Pinter
  • Publication number: 20180065845
    Abstract: A manufacturing method for a micromechanical device including an inclined optical window and a corresponding micromechanical device. The method includes: providing a first substrate having front and back sides and a recess; applying a second substrate on the front side, the second substrate being thermally deformable and having a first through hole above the recess which has a smaller lateral extension than the recess; forming a flap area on the second substrate above/below the first through hole which is situated in a first position with respect to the first substrate; thermally deforming the second substrate, the flap area being moved into a second position within the recess which is inclined with respect to the first position and optionally subsided into the recess; removing the flap area from the second substrate; and attaching the optical window on the second substrate above/below the first through hole in the second inclined position.
    Type: Application
    Filed: September 1, 2017
    Publication date: March 8, 2018
    Inventors: Benjamin Steuer, Stefan Pinter
  • Patent number: 9663351
    Abstract: A production method for a wafer equipped with transparent plates includes: formation of a row of through-holes in a wafer; formation of at least one strip-shaped recess in a wafer surface, each of the through-holes of the same row intersecting partly with the respectively associated strip-shaped recess; an uninterrupted groove being formed in each intermediate region between two adjacent through-holes of the same row, the floor surface of the groove being oriented so as to be inclined relative to the wafer surface by an angle of inclination greater than 0° and less than 90°; and covering at least one through-hole with at least one transparent plate made of at least one material transparent to at least a sub-spectrum of electromagnetic radiation.
    Type: Grant
    Filed: January 30, 2015
    Date of Patent: May 30, 2017
    Assignee: ROBERT BOSCH GMBH
    Inventors: Simon Armbruster, Dietmar Haberer, Stefan Pinter, Jochen Tomaschko, Benjamin Steuer
  • Publication number: 20170140943
    Abstract: A method for forming a cavity in a silicon substrate, a surface of the silicon substrate having a tilting angle relative to a first plane of the silicon substrate, and the first plane being a {111} plane of the silicon substrate, and situation of an etching mask on the surface of the silicon substrate. The etching mask has a retarding structure that protrudes into the mask opening, and a first etching projection region. All further edges of the mask opening outside the first etching projection region are situated essentially parallel to {111} planes of the silicon substrate. The method includes an anisotropic etching of the silicon substrate during a defined etching duration. An etching rate in the <111> directions of the silicon substrate is lower than in other spatial directions, and the first retarding structure is undercut in a first undercut direction going out from the first etching projection region.
    Type: Application
    Filed: May 29, 2015
    Publication date: May 18, 2017
    Inventors: Simon Armbruster, Benjamin Steuer, Stefan Pinter, Dietmar Haberer, Jochen Tomaschko
  • Publication number: 20150232328
    Abstract: A production method for a wafer equipped with transparent plates includes: formation of a row of through-holes in a wafer; formation of at least one strip-shaped recess in a wafer surface, each of the through-holes of the same row intersecting partly with the respectively associated strip-shaped recess; an uninterrupted groove being formed in each intermediate region between two adjacent through-holes of the same row, the floor surface of the groove being oriented so as to be inclined relative to the wafer surface by an angle of inclination greater than 0° and less than 90°; and covering at least one through-hole with at least one transparent plate made of at least one material transparent to at least a sub-spectrum of electromagnetic radiation.
    Type: Application
    Filed: January 30, 2015
    Publication date: August 20, 2015
    Inventors: Simon ARMBRUSTER, Dietmar Haberer, Stefan Pinter, Jochen Tomaschko, Benjamin Steuer