Abstract: Disclosed is an interdigitated back contact photovoltaic device that includes a first patterned silicon layer situated on an intrinsic layer, and having the same type of doping as the one of the substrate. First charge collection portions are deposited on predetermined areas of the intrinsic layer, and include each an amorphous layer portion situated between the predetermined areas and the at least partially nano-crystalline layer portions. The amorphous layer portions have a larger width than the width of the nano-crystalline layer portions. On top if the first patterned silicon layer, a second nano-crystalline silicon layer is deposited that has a doping of a second type being the other of the p-type doping or the n-type doping with respect to the doping-type of the first patterned silicon layer.

Abstract: The present invention is directed to solar cell strings (1) for photovoltaic modules comprising (i) a string of solar cells (2a, 2b, 2c) facing each other in opposite polarity and shingled in string direction with or without partial overlap of solar cells (2a, 2b, 2c); (ii) at least one elongated electrically conducting interconnect (3a, 3b) extending in string direction from one side of one solar cell to the opposite side of the next solar cell (2a, 2b, 2c) for mechanically and electrically connecting the positive and negative electrodes of the shingled solar cells (2a, 2b, 2c) in string direction on the alternating top and bottom sides of the solar cells, and (iii) at least two adhesives, optionally thermoadhesive foils (4a, 4b) covering the at least one elongated interconnect (3a, 3b) and at least part of the top or bottom side of each solar cell that comprises the elongated interconnect, with the proviso that (a) there is no horizontal gap between shingled solar cells, (b) the adhesives (4a, 4b) do not co

Abstract: Disclosed is an interdigitated back contact photovoltaic device that includes a first patterned silicon layer situated on an intrinsic layer, and having the same type of doping as the one of the substrate. First charge collection portions are deposited on predetermined areas of the intrinsic layer, and include each an amorphous layer portion situated between the predetermined areas and the at least partially nano-crystalline layer portions. The amorphous layer portions have a larger width than the width of the nano-crystalline layer portions. On top if the first patterned silicon layer, a second nano-crystalline silicon layer is deposited that has a doping of a second type being the other of the p-type doping or the n-type doping with respect to the doping-type of the first patterned silicon layer.

Abstract: The present invention is directed to solar cell strings comprising (i) a string of solar cells shingled in string direction, resulting in positive and negative electrode overlap, (ii) an interconnect for electrically connecting the positive and negative electrodes of the shingled solar cells, and (iii) an adhesive foil spanning at least part of the string and positioned on (a) the top (sun facing) sides of the at least two shingled solar cells, and/or (b) the bottom (far) sides of the at least two shingled solar cells, or on (c) the top side of one solar cell and on the bottom side of the overlapping solar cell, in which case the adhesive foil comprises the interconnect and connects the overlap in order to mechanically connect and position the shingled solar cells. In addition, the present invention relates to a method for producing such solar cell strings.

Abstract: A solar cell includes a front side for light incidence, an opposite back side, a crystalline semiconductor substrate of a first or second conductivity type, a front side passivating region with a passivating layer and a conductive layer of the first type, a back side passivating region with a passivating layer and a conductive layer of the second type, a front side contact with one front side conductive material and front side electrical contacts on the front side conductive material, a front side light coupling layer on the front side, a back side contact opposite the front side contact and formed by back side conductive material and a back side electrical contact thereon. The front side has lower light absorption and better antireflective property. The front side conductive material is thinner in regions between and/or besides front side electrical contacts than in regions below front side electrical contacts.

Abstract: A capacitive-coupled parallel plate plasma enhanced chemical vapor deposition reactor includes a gas distribution unit that is integrated in an RF electrode and is formed with a gas outlet. The parallel plate reactor is configured so that layers with high thickness homogeneity and quality can be produced. The capacitively coupled parallel plate plasma enhanced vapor deposition reactor has gas distribution unit with a multiple-stage showerhead constructed in such a way that it provides an independent adjustment of gas distribution and gas emission profile of the gas distribution unit.

Abstract: A capacitive-coupled parallel plate plasma enhanced chemical vapor deposition reactor includes a gas distribution unit that is integrated in an RF electrode and is formed with a gas outlet. The parallel plate reactor is configured so that layers with high thickness homogeneity and quality can be produced. The capacitively coupled parallel plate plasma enhanced vapor deposition reactor has gas distribution unit with a multiple-stage showerhead constructed in such a way that it provides an independent adjustment of gas distribution and gas emission profile of the gas distribution unit.