Abstract: A ditch forming apparatus having: a frame; a primary ditch forming assembly having: a) a first subassembly for penetrating and separating subjacent ground material; and b) a second subassembly for directing separated ground material away from a ditch being formed; and a ground treatment assembly to facilitate delivery of ground material to the second subassembly and having a ground engaging component that is turned around a first axis. At least one of: a) a vertical height of the first axis relative to the frame; b) a variable vertical force generated between the at least one ground engaging component and frame; c) a fore and aft position of the first axis relative to the frame; d) a speed of turning of the at least one ground engaging component around the first axis; and e) a direction of turning of the at least one ground engaging component around the first axis, can be changed.

Abstract: A ditch forming apparatus having: a frame; a primary ditch forming assembly having: a) a first subassembly for penetrating and separating subjacent ground material; and b) a second subassembly for directing separated ground material away from a ditch being formed; and a ground treatment assembly to facilitate delivery of ground material to the second subassembly and having a ground engaging component that is turned around a first axis. At least one of: a) a vertical height of the first axis relative to the frame; b) a variable vertical force generated between the at least one ground engaging component and frame; c) a fore and aft position of the first axis relative to the frame; d) a speed of turning of the at least one ground engaging component around the first axis; and e) a direction of turning of the at least one ground engaging component around the first axis, can be changed.

Abstract: Growth of Group IV nanowires with a substrate and a Group IV metalloid is performed using resistive or inductive heating of the substrate. A roll-to-roll process enables a metal surface to move through a reaction environment while reacting with a stream or bath of precursor to form the nanowire-metal complex. The Group IV nanowires on a surface of the substrate can have a surface loading greater than 10 mg/cm2.