Patents by Inventor Benjamin Vaughan CUNNING

Benjamin Vaughan CUNNING has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Process for forming graphene layers on silicon carbide
    Patent number: 9771665
    Abstract: A process for forming graphene, includes: depositing at least a first and a second metal onto a surface of silicon carbide (SiC), and heating the SiC and the first and second metals under conditions that cause the first metal to react with silicon of the silicon carbide to form carbon and at least one stable silicide. The corresponding solubilities of the carbon in the stable silicide and in the second metal are sufficiently low that the carbon produced by the silicide reaction forms a graphene layer on the SiC.
    Type: Grant
    Filed: September 8, 2014
    Date of Patent: September 26, 2017
    Assignee: GRIFFITH UNIVERSITY
    Inventors: Francesca Iacopi, Mohsin Ahmed, Benjamin Vaughan Cunning
  • PROCESS FOR FORMING GRAPHENE LAYERS ON SILICON CARBIDE
    Publication number: 20160230304
    Abstract: A process for forming graphene, includes: depositing at least a first and a second metal onto a surface of silicon carbide (SiC), and heating the SiC and the first and second metals under conditions that cause the first metal to react with silicon of the silicon carbide to form carbon and at least one stable silicide. The corresponding solubilities of the carbon in the stable silicide and in the second metal are sufficiently low that the carbon produced by the silicide reaction forms a graphene layer on the SiC.
    Type: Application
    Filed: September 8, 2014
    Publication date: August 11, 2016
    Inventors: Francesca IACOPI, Mohsin AHMED, Benjamin Vaughan CUNNING