Abstract: An embodiment of the invention relates to an optical component (10, 300) for processing optical signals comprising a rhombic prism (20) having a first surface (SF1), a second surface (SF2) that is parallel to the first surface (SF1), a third surface (SF3) that is angled relative to the first and second surfaces (SF1, SF2) and connects the first and second surfaces (SF1, SF2), and a fourth surface (SF4) that is parallel to the third surface (SF3) and connects the first and second surfaces (SF1, SF2), wherein the third surface (SF3) is covered by a polarization dependent layer (PDL) capable of transmitting radiation having a first polarization and capable of reflecting radiation having a second polarization, said first and second polarizations being perpendicular to each other.

Abstract: A method of producing a device with a movable portion spaced apart from a support wafer comprises a step of providing the support wafer having a structured surface and a further step of providing a device wafer with a backing layer and a device layer disposed thereon. Further, the method comprises the step of generating a first planarization layer from a first starting material on the support wafer with a first method to fill in the structures of the structured surface of the support wafer, whereby a surface with a first degree of planarization is obtained. Further, the method comprises a step of generating a second planarization layer from a second starting material on the planarized surface of the support wafer with a second method to obtain a surface with a second degree of planarization, which is higher than the first degree of planarization, wherein the first and second planarization layers can be removed together.

Abstract: A method of producing a device with a movable portion spaced apart from a support wafer comprises a step of providing the support wafer having a structured surface and a further step of providing a device wafer with a backing layer and a device layer disposed thereon. Further, the method comprises the step of generating a first planarization layer from a first starting material on the support wafer with a first method to fill in the structures of the structured surface of the support wafer, whereby a surface with a first degree of planarization is obtained. Further, the method comprises a step of generating a second planarization layer from a second starting material on the planarized surface of the support wafer with a second method to obtain a surface with a second degree of planarization, which is higher than the first degree of planarization, wherein the first and second planarization layers can be removed together.