Patents by Inventor BENJAMIN W. BUFORD

BENJAMIN W. BUFORD has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Magnetic memory device with ruthenium diffusion barrier
    Patent number: 11626451
    Abstract: A magnetic memory device comprising a plurality of memory cells is disclosed. The memory device includes an array of memory cells where each memory cell includes a first material layer having a ferromagnetic material, a second material layer having ruthenium, and a third material layer having bismuth and/or antimony. The second material layer is sandwiched between the first material layer and the third material in a stacked configuration.
    Type: Grant
    Filed: June 17, 2019
    Date of Patent: April 11, 2023
    Assignee: Intel Corporation
    Inventors: Emily Walker, Carl H. Naylor, Kaan Oguz, Kevin L. Lin, Tanay Gosavi, Christopher J. Jezewski, Chia-Ching Lin, Benjamin W. Buford, Dmitri E. Nikonov, John J. Plombon, Ian A. Young, Noriyuki Sato
  • MAGNETIC MEMORY DEVICE WITH RUTHENIUM DIFFUSION BARRIER
    Publication number: 20200395406
    Abstract: A magnetic memory device comprising a plurality of memory cells is disclosed. The memory device includes an array of memory cells where each memory cell includes a first material layer having a ferromagnetic material, a second material layer having ruthenium, and a third material layer having bismuth and/or antimony. The second material layer is sandwiched between the first material layer and the third material in a stacked configuration.
    Type: Application
    Filed: June 17, 2019
    Publication date: December 17, 2020
    Applicant: INTEL CORPORATION
    Inventors: EMILY WALKER, CARL H. NAYLOR, KAAN OGUZ, KEVIN L. LIN, TANAY GOSAVI, CHRISTOPHER J. JEZEWSKI, CHIA-CHING LIN, BENJAMIN W. BUFORD, DMITRI E. NIKONOV, JOHN J. PLOMBON, IAN A. YOUNG, NORIYUKI SATO