Patents by Inventor BENJIAN LIU

BENJIAN LIU has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Direct growth methods for preparing diamond-assisted heat-dissipation silicon carbide substrates of GaN-HEMTs
    Patent number: 11139176
    Abstract: Direct growth methods for preparing diamond-assisted heat-dissipation silicon carbide substrates of GaN-HEMTs are disclosed. In an embodiment, the direct growth method includes the following steps: (1) etching holes in a surface of a silicon carbide substrate to produce a silicon carbide wafer; (2) ultrasonic cleaning the produced silicon carbide wafer; (3) establishing an auxiliary nucleation point on a surface of the silicon carbide wafer; (4) depositing a diamond layer; (5) removing the portion of the diamond layer on the upper surface while retaining the portion of the diamond layer in the holes; (6) ultrasonic cleaning; and (7) depositing diamond in the holes on the silicon carbide wafer until the holes are fully filled.
    Type: Grant
    Filed: February 25, 2020
    Date of Patent: October 5, 2021
    Assignee: Harbin Institute of Technology
    Inventors: Bing Dai, Jiwen Zhao, Jiaqi Zhu, Lei Yang, Wenxin Cao, Kang Liu, Jiecai Han, Guoyang Shu, Ge Gao, Kaili Yao, Benjian Liu
  • DIRECT GROWTH METHODS FOR PREPARING DIAMOND-ASSISTED HEAT-DISSIPATION SILICON CARBIDE SUBSTRATES OF GAN-HEMTS
    Publication number: 20200273717
    Abstract: Direct growth methods for preparing diamond-assisted heat-dissipation silicon carbide substrates of GaN-HEMTs are disclosed. In an embodiment, the direct growth method includes the following steps: (1) etching holes in a surface of a silicon carbide substrate to produce a silicon carbide wafer; (2) ultrasonic cleaning the produced silicon carbide wafer; (3) establishing an auxiliary nucleation point on a surface of the silicon carbide wafer; (4) depositing a diamond layer; (5) removing the portion of the diamond layer on the upper surface while retaining the portion of the diamond layer in the holes; (6) ultrasonic cleaning; and (7) depositing diamond in the holes on the silicon carbide wafer until the holes are fully filled.
    Type: Application
    Filed: February 25, 2020
    Publication date: August 27, 2020
    Inventors: BING DAI, JIWEN ZHAO, JIAQI ZHU, LEI YANG, WENXIN CAO, KANG LIU, JIECAI HAN, GUOYANG SHU, GE GAO, KAILI YAO, BENJIAN LIU