Patents by Inventor Bennett W. Olson

Bennett W. Olson has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Mask patterns for use in multiple-exposure lithography
    Patent number: 8082524
    Abstract: A method for determining mask patterns to be used on photo-masks in a multiple-exposure photolithographic process is described. During the method, an initial mask pattern, which is intended for use in a single-exposure photolithographic process, and a target pattern that is to be printed are used to determine a first mask pattern and a second mask pattern, which are intended for use in the multiple-exposure photolithographic process. In particular, the first mask pattern includes a first feature and the second mask pattern includes a second feature, and the first feature and the second feature overlap an intersection between features in the initial mask pattern. Moreover, the first mask pattern and the second mask pattern have at least one decreased spatial frequency relative to the initial mask pattern along at least one direction in the initial mask pattern.
    Type: Grant
    Filed: April 14, 2009
    Date of Patent: December 20, 2011
    Assignee: Luminescent Technologies, Inc.
    Inventors: Robert P. Gleason, Timothy Lin, Andrew J. Moore, Bennett W. Olson, Paul Rissman
  • Mask Patterns for Use in Multiple-Exposure Lithography
    Publication number: 20090319978
    Abstract: A method for determining mask patterns to be used on photo-masks in a multiple-exposure photolithographic process is described. During the method, an initial mask pattern, which is intended for use in a single-exposure photolithographic process, and a target pattern that is to be printed are used to determine a first mask pattern and a second mask pattern, which are intended for use in the multiple-exposure photolithographic process. In particular, the first mask pattern includes a first feature and the second mask pattern includes a second feature, and the first feature and the second feature overlap an intersection between features in the initial mask pattern. Moreover, the first mask pattern and the second mask pattern have at least one decreased spatial frequency relative to the initial mask pattern along at least one direction in the initial mask pattern.
    Type: Application
    Filed: April 14, 2009
    Publication date: December 24, 2009
    Inventors: Robert P. Gleason, Timothy Lin, Andrew J. Moore, Bennett W. Olson, Paul Rissman