Patents by Inventor Benoit Amstatt
Benoit Amstatt has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11894413Abstract: A method for manufacturing an optoelectronic device including the steps of forming a substrate having a support face; forming a first series of first areas adapted to the formation of all or part of light-emitting diodes, forming a second series of second areas on the support face, adapted to the formation of light confinement wall elements capable of forming a light confinement wall, the second areas defining therebetween sub-pixel areas; forming, from the first areas, light-emitting diodes; forming, by the same technique as in the previous step, from the second areas, light confinement wall elements, concomitantly with all or part of the light-emitting diodes which are formed in the previous step.Type: GrantFiled: October 17, 2019Date of Patent: February 6, 2024Assignee: ALEDIAInventors: Pierre Tchoulfian, Benoît Amstatt
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Publication number: 20230268460Abstract: A method for manufacturing an optoelectronic device having a substrate and, on a first face of the substrate, at least one stack, in a longitudinal direction, of at least one injection layer of a first type of carriers and an active layer. The method including formation of a growth mask on the first face of the substrate, the growth mask having an opening in the longitudinal direction through which the first face is exposed, formation, from the exposed zone of the substrate, of the injection layer of the first type of carriers within the opening, formation of the active layer on the injection layer, within the opening, such that the active layer is confined in the opening and does not extend outside of the opening. One or more embodiment also relates to an optoelectronic device having an active layer confined in an opening of a growth mask.Type: ApplicationFiled: June 29, 2021Publication date: August 24, 2023Inventors: Benoit AMSTATT, Pierre TCHOULFIAN, Jerome NAPIERALA
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Patent number: 11563147Abstract: An optoelectronic device including: a three-dimensional semiconductor element mostly made of a first chemical element and of a second chemical element; an active area at least partially covering the lateral walls of the three-dimensional semiconductor element and including a stack of at least a first layer mostly made of the first and second chemical elements, and of at least a second layer mostly made of the first and second chemical elements and of a third chemical element; a third layer covering the active area, the third layer being mostly made of the first, second, and third chemical elements and of a fourth chemical element, the mass proportion of the third and fourth chemical elements of the third layer increasing or decreasing as the distance to the substrate increases; and a fourth layer, mostly made of the first and second chemical elements, covering the third layer.Type: GrantFiled: December 6, 2018Date of Patent: January 24, 2023Assignee: AlediaInventors: Pierre Tchoulfian, Benoît Amstatt, Philippe Gilet
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Publication number: 20220223646Abstract: An optoelectronic device includes a substrate and wire-shaped light-emitting diodes the wire shape of which is elongate along a longitudinal axis. Each light-emitting diode has a doped first region including, over all or some of its height measured along the longitudinal axis, of a central first segment that is substantially elongate along the longitudinal axis, this segment being based on gallium nitride, and of an external second segment, this segment being based on aluminium and gallium nitride. The second segment includes an external first portion arranged laterally around the first segment (121), all or some of the first portion having a first average atomic concentration of aluminium, and of a lower second portion arranged at least between the first portion of the second segment and the substrate, the second portion having a second average atomic concentration of aluminium being electrically insulating.Type: ApplicationFiled: April 29, 2020Publication date: July 14, 2022Inventors: Pierre TCHOULFIAN, Benoît AMSTATT
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Publication number: 20210384253Abstract: A method for manufacturing an optoelectronic device including the steps of forming a substrate having a support face; forming a first series of first areas adapted to the formation of all or part of light-emitting diodes, forming a second series of second areas on the support face, adapted to the formation of light confinement wall elements capable of forming a light confinement wall, the second areas defining therebetween sub-pixel areas; forming, from the first areas, light-emitting diodes; forming, by the same technique as in the previous step, from the second areas, light confinement wall elements, concomitantly with all or part of the light-emitting diodes which are formed in the previous step.Type: ApplicationFiled: October 17, 2019Publication date: December 9, 2021Inventors: Pierre TCHOULFIAN, Benoît AMSTATT
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Patent number: 10886427Abstract: An optoelectronic device including a support having a rear surface and a front surface opposite each other, a plurality of nucleation conductive strips forming first polarization electrodes, an intermediate insulating layer covering the nucleation conductive strips, a plurality of diodes, each of which having a first, three-dimensional doped region and a second doped region, and a plurality of top conductive strips forming second polarization electrodes and resting on the intermediate insulating layer, each top conductive strip being disposed in such a way as to be in contact with the second doped regions of a set of diodes of which the first doped regions are in contact with different nucleation conductive strips.Type: GrantFiled: June 26, 2017Date of Patent: January 5, 2021Assignees: ALEDIA, COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVESInventors: Florian Dupont, Benoit Amstatt, Vincent Beix, Thomas Lacave, Philippe Gilet, Ewen Henaff, Berangere Hyot, Hubert Bono
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Publication number: 20200365762Abstract: An optoelectronic device including: a three-dimensional semiconductor element mostly made of a first chemical element and of a second chemical element; an active area at least partially covering the lateral walls of the three-dimensional semiconductor element and including a stack of at least a first layer mostly made of the first and second chemical elements, and of at least a second layer mostly made of the first and second chemical elements and of a third chemical element; a third layer covering the active area, the third layer being mostly made of the first, second, and third chemical elements and of a fourth chemical element, the mass proportion of the third and fourth chemical elements of the third layer increasing or decreasing as the distance to the substrate increases; and a fourth layer, mostly made of the first and second chemical elements, covering the third layer.Type: ApplicationFiled: December 6, 2018Publication date: November 19, 2020Applicant: AlediaInventors: Pierre Tchoulfian, Benoît Amstatt, Philippe Gilet
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Patent number: 10801129Abstract: A nucleation structure for the epitaxial growth of three-dimensional semiconductor elements, including a substrate including a monocrystalline material forming a growth surface, a plurality of intermediate portions made of an intermediate crystalline material epitaxied from the growth surface and defining an upper intermediate surface, and a plurality of nucleation portions, made of a material including a transition metal forming a nucleation crystalline material, each epitaxied from the upper intermediate surface, and defining a nucleation surface suitable for the epitaxial growth of a three-dimensional semiconductor element.Type: GrantFiled: June 26, 2017Date of Patent: October 13, 2020Assignees: COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES, ALEDIAInventors: Benoit Amstatt, Florian Dupont, Ewen Henaff, Berangere Hyot
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Patent number: 10651341Abstract: An optoelectronic device including first and second active regions suitable for emitting or detecting electromagnetic radiation and containing a first semiconductor material that predominantly contains a first compound selected from Compounds III-V, Compounds II-VI, and mixtures of same. The first active regions have a first polarity, and the second active regions have a second polarity different from the first polarity.Type: GrantFiled: August 12, 2019Date of Patent: May 12, 2020Assignees: Aledia, Centre National de la Recherche ScientifiqueInventors: Benoît Amstatt, Sylvia Scaringella, Jesus Zuniga-Perez
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Patent number: 10636653Abstract: The process for growing at least one semiconductor nanowire (3), said growth process comprising a step of forming, on a substrate (1), a nucleation layer (2) for the growth of the nanowire (3) and a step of growth of the nanowire (3). The step of formation of the nucleation layer (2) comprises the following steps: deposition onto the substrate (1) of a layer of a transition metal (4) chosen from Ti, V, Cr, Zr, Nb, Mo, Hf, Ta; nitridation of at least a part (2) of the transition metal layer so as to form a transition metal nitride layer having a surface intended for growing the nanowire (3).Type: GrantFiled: October 25, 2013Date of Patent: April 28, 2020Assignees: COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES, ALEDIAInventors: Bérangère Hyot, Benoit Amstatt, Marie-Françoise Armand, Florian Dupont
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Publication number: 20190363219Abstract: An optoelectronic device including first and second active regions suitable for emitting or detecting electromagnetic radiation and containing a first semiconductor material that predominantly contains a first compound selected from Compounds III-V, Compounds II-VI, and mixtures of same. The first active regions have a first polarity, and the second active regions have a second polarity different from the first polarity.Type: ApplicationFiled: August 12, 2019Publication date: November 28, 2019Applicants: Aledia, Centre National de la Recherche ScientifiqueInventors: Benoît Amstatt, Sylvia Scaringella, Jesus Zuniga-Perez
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Patent number: 10424692Abstract: An optoelectronic device including first, and second active regions suitable for emitting or detecting electromagnetic radiation and containing a first semiconductor material that predominantly contains a first compound selected from Compounds III-V, Compounds II-VI, and mixtures of same. The first active regions have a first polarity, and the second active regions have a second polarity different from the first polarity.Type: GrantFiled: January 20, 2016Date of Patent: September 24, 2019Assignees: Aledia, Centre National de la Recherche ScientifiqueInventors: Benoît Amstatt, Sylvia Scaringella, Jesus Zuniga-Perez
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Patent number: 10340138Abstract: The electronic device comprises a substrate (1), at least one semiconductor wire element (2) formed by a nitride of a group III material and an electroconductive layer (3) interposed between the substrate (1) and said at least one semiconductor wire element (2). Said at least one semiconductor wire element (2) extends from said electroconductive layer (3), and the electroconductive layer (3) comprises a carbide of zirconium or a carbide of hafnium.Type: GrantFiled: December 4, 2015Date of Patent: July 2, 2019Assignees: COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES, ALEDIAInventors: Florian Dupont, Benoit Amstatt, Bérangère Hyot
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Publication number: 20190172970Abstract: An optoelectronic device including a support having a rear surface and a front surface opposite each other, a plurality of nucleation conductive strips forming first polarization electrodes, an intermediate insulating layer covering the nucleation conductive strips, a plurality of diodes, each of which having a first, three-dimensional doped region and a second doped region, and a plurality of top conductive strips forming second polarization electrodes and resting on the intermediate insulating layer, each top conductive strip being disposed in such a way as to be in contact with the second doped regions of a set of diodes of which the first doped regions are in contact with different nucleation conductive strips.Type: ApplicationFiled: June 26, 2017Publication date: June 6, 2019Applicants: ALEDIA, COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVESInventors: Florian DUPONT, Benoit AMSTATT, Vincent BEIX, Thomas LACAVE, Philippe GILET, Ewen HENAFF, Berangere HYOT, Hubert BONO
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Publication number: 20190153619Abstract: A nucleation structure for the epitaxial growth of three-dimensional semiconductor elements, including a substrate including a monocrystalline material forming a growth surface, a plurality of intermediate portions made of an intermediate crystalline material epitaxied from the growth surface and defining an upper intermediate surface, and a plurality of nucleation portions, made of a material including a transition metal forming a nucleation crystalline material, each epitaxied from the upper intermediate surface, and defining a nucleation surface suitable for the epitaxial growth of a three-dimensional semiconductor element.Type: ApplicationFiled: June 26, 2017Publication date: May 23, 2019Applicants: COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES, ALEDIAInventors: Benoit AMSTATT, Florian DUPONT, Ewen HENAFF, Berangere HYOT
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Patent number: 10153399Abstract: An optoelectronic device including semiconductor elements, each semiconductor element resting on a carrier through an aperture formed in a portion at least one first part of which is insulating and covers at least partially the carrier, the height of the aperture being larger than or equal to 100 nm and smaller than or equal to 3000 nm and the ratio of the height to the smallest diameter of the aperture being higher than or equal to 0.5 and lower than or equal to 10.Type: GrantFiled: December 23, 2014Date of Patent: December 11, 2018Assignee: AlediaInventors: Erwan Dornel, Benoît Amstatt, Philippe Gilet
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Publication number: 20180277717Abstract: An optoelectronic device including first and second active regions suitable for emitting or detecting electromagnetic radiation and containing a first semiconductor material that predominantly contains a first compound selected from Compounds III-V, Compounds II-VI, and mixtures of same.Type: ApplicationFiled: January 20, 2016Publication date: September 27, 2018Applicants: Aledia, Centre National de la Recherche ScientifiqueInventors: Benoît AMSTATT, Sylvia SCARINGELLA, Jesus ZUNIGA-PEREZ
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Patent number: 10026870Abstract: An optoelectronic device including a substrate having a surface, openings which extend in the substrate from the surface, and semiconductor elements, each semiconductor element partially extending into one of the openings and partially outside said opening, the height of each opening being at least 25 nm and at most 5 ?m and the ratio of the height to the smallest diameter of each opening being at least 0.5 and at most 15.Type: GrantFiled: June 22, 2015Date of Patent: July 17, 2018Assignee: AlediaInventors: Nathalie Dechoux, Thomas Lacave, Benoît Amstatt, Philippe Gibert
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Patent number: 9991342Abstract: The electronic device comprises a substrate (1), at least one semiconductor nanowire (2) and a buffer layer (3) interposed between the substrate (1) and said nanowire (2). The buffer layer (3) is at least partly formed by a transition metal nitride layer (9) from which extends the nanowire (2), said transition metal nitride being chosen from: vanadium nitride, chromium nitride, zirconium nitride, niobium nitride, molybdenum nitride, hafnium nitride or tantalum nitride.Type: GrantFiled: October 25, 2013Date of Patent: June 5, 2018Assignees: COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES, ALEDIAInventors: Bérangère Hyot, Benoit Amstatt, Marie-Françoise Armand, Florian Dupont
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Patent number: 9899566Abstract: The invention relates to an optoelectronic device comprising microwires or nanowires, each having at least one active portion (34, 39) between two insulated portions (32, 36, 40), the active portion having inclined flanks or having a diameter different from the diameter of at least one of the two insulated portions.Type: GrantFiled: December 27, 2013Date of Patent: February 20, 2018Assignee: ALEDIAInventor: Benoît Amstatt