Abstract: A semiconductor device includes a layer of a semiconductor material in which is formed an active zone; a plurality of first gates forming a plurality of lines substantially parallel to each other and covering in part the active zone; a plurality of second gates forming a plurality of columns; at least one third gate, designated measurement gate, extending along an axis substantially parallel to the lines of the plurality of lines and in a direction opposite to the lines of the plurality of lines with respect to the active zone, and a first electrode and a second electrode situated on either side of the plurality of measurement gates in the active zone.

Abstract: A quantum device including an active zone extending along a longitudinal direction, and QD gates extending along a transverse direction, the QD gates being disposed on either side of the active zone, opposite one another, to control a quantum dot. The device includes transverse gates, each disposed on a pair of QD gates opposite one another, and separated from the QD gates and from the active zone by a gate dielectric. Each transverse gate is configured to control a transverse tunnel barrier between the QD gates.

Abstract: A quantum device formed from a substrate, the substrate being covered with a semiconductor region forming a quantum dot, and a detection structure with a Coulomb blockade for detecting a state of charge of the quantum dot, the detection structure with the Coulomb blockade including a detection island disposed above and facing the quantum dot and coupled to the quantum dot by electrostatic coupling, the detection structure further including a first tunnel junction between the detection island and a first gate block, the first gate block being juxtaposed with the detection island.

Abstract: A method for manipulating a group of quantum dots of a quantum dots matrix, called target group, each target group including a quantum dot and containing a charged particle, the matrix being connected to a reservoir of charged particles, each target group being defined by a potential barrier, each charged particle being a carrier of a charge and spin, the method including, for each target group, a total isolation procedure of the target group relative to the other quantum dots, the potential barrier separating the target group of quantum dots of the matrix adjacent to the target group being configured so that the charged particle(s) contained in the target group cannot cross the potential barrier in order to be moved to the adjacent quantum dots or to the reservoir even when such a transition is authorised from an energy standpoint; and maintaining the target group in the completely isolated regime.

Abstract: A structure for cooling a component of a quantum device by circulating a given current between a first contact element with the component and a second contact element with the component, the first contact element comprising at least one given superconducting metal material, in particular at a given temperature less than 2K, and being in contact by a first end with a first semiconductor portion of said component so as to form with the first semiconductor portion at least one cooling tunnel junction.

Abstract: A quantum device has a plurality of quantum dots arranged in a two-dimensional matrix, a first gate level surmounting the plurality of quantum dots, a second gate level surmounting the first gate level, and a plurality of charge detectors capacitively coupled to the quantum dots. The plurality of charge detectors is integrated in one from among the first and second gate levels, each charge detector comprising a portion located between the gates of the gate level considered. The invention also relates to a method for producing such a quantum device.

Abstract: An elementary cell for a two-dimensional array of quantum dots, said elementary cell extending along a main plane and including: a plurality of sites occupied by quantum dots capable of confining at least one spin qubit and including at least: a first quantum dot, a second quantum dot adjacent to the first quantum dot in a first direction of the main plane, and a third quantum dot adjacent to the first quantum dot in a second direction of the main plane; and a first blocking site adjacent to the second and third quantum dots, towards which a spin qubit cannot be displaced.

Abstract: A method for manufacturing a quantum electronic circuit includes etching a semiconducting layer so as to obtain: a plurality of pillars; and a qubit layer; oxidising the flank of each pillar; forming coupling rows and coupling columns; and depositing separation layers leaving a contact surface protrude from each pillar.

Abstract: A quantum device includes a semiconductor layer adapted to form a two-dimensional array of quantum dots, the semiconductor layer having a front face, a dielectric, disposed on the front face of the semiconductor layer, first gates and second gates to control the quantum dots, the first gates and the second gates extending directly over the dielectric, each second gate intersecting the first gates, charge detectors, each charge detector including a conductive island, a source and a drain, the conductive island of each charge detector being formed between two adjacent first gates and directly over the dielectric.

Abstract: A quantum device includes a semiconductor layer adapted to form a two-dimensional array of quantum dots, the semiconductor layer having a front face, a dielectric, disposed on the front face of the semiconductor layer, first gates and second gates to control the quantum dots, the first gates and the second gates extending directly over the dielectric, each second gate intersecting the first gates, charge detectors, each charge detector including a conductive island, and a charge reservoir, the conductive island of each charge detector being formed between two adjacent first gates and directly over the dielectric.

Abstract: Quantum device formed from a substrate, the substrate being covered: with at least one semiconductor region forming a quantum dot, a detection structure with Coulomb blockade for detecting a state of charge of the quantum dot, said detection structure with Coulomb blockade including a detection island disposed above and facing the quantum dot and able to be coupled to the quantum dot by electrostatic coupling, said detection structure furthermore including at least one first tunnel junction between said detection island and a first gate block, the first gate block being juxtaposed with said detection island.

Abstract: An electronic device including: a support; a semiconductor fin arranged on the support, in which quantum dots are intended to be formed; a plurality of separate first control gates, arranged on the side of a first lateral surface of the fin, one above the other and defining different gate levels, configured to each control the electrostatic potential of one of the quantum dots; at least one second control gate arranged on the side of a second lateral surface of the fin, and configured to control the electrostatic potential of a coupling region between the quantum dots; wherein the second control gate is offset, along a direction perpendicular to the upper surface of the support, with respect to the first control gates.

Abstract: A quantum device, includes a semiconductor portion comprising several first quantum dot regions each disposed between at least two second tunnel barrier regions and placed next to the two second regions; first gates each comprising a first conductive portion; and second gates each comprising at least a second conductive portion and a second dielectric disposed between the second conductive portion and the first conductive portion of one of the first gates, such that each of the first gates is disposed between the semi-conductor portion and one of the second gates. The first and second gates are disposed above the first regions or above the second regions, the second gates being solely located in a vertical extension of the first gates.

Abstract: A quantum device configured to be able to form an array of quantum dots, the device including for this: an active layer made of a semiconductor material; a plurality of first gates disposed along a plurality of rows; a plurality of second gates disposed along a plurality of columns perpendicular to the rows of the plurality of rows; a plurality of third gates, each third gate of the plurality of third gates being disposed at the intersection of one row of the plurality of rows and one column of the plurality of columns, each third gate being separated from the nearest third gates, on a row by a first gate and on a column by a second gate; a plurality of fourth gates, each fourth gate being disposed between two second gates along the rows and between two first gates along the columns.

Abstract: A quantum device configured to be able to form an array of quantum dots, the device including for this: an active layer made of a semiconductor material; a plurality of first gates disposed along a plurality of rows; a plurality of second gates disposed along a plurality of columns perpendicular to the rows of the plurality of rows; a plurality of third gates, each third gate of the plurality of third gates being disposed at the intersection of one row of the plurality of rows and one column of the plurality of columns, each third gate being separated from the nearest third gates, on a row by a first gate and on a column by a second gate; the active layer including apertures over the entire thickness of the active layer disposed between the rows of the plurality of rows and the columns of the plurality of columns.

Abstract: One aspect of the invention relates to an electronic circuit (1) comprising: a semiconductor layer (2), referred to as “qubit layer”; a separation layer (42) extending in contact with the qubit layer (2); first conductive electrodes (61), referred to as “coupling rows”, extending in parallel to the qubit layer (2); second conductive electrodes (62), referred to as “coupling columns”, extending in parallel to the qubit layer (2); third conductive electrodes (71), referred to as “control rows”, extending over the spacer (42); and conductive vias (72), referred to as “control vias”, extending perpendicularly to the face of the qubit layer (2) from the spacer (42) and having one end disposed in proximity to the qubit layer (2).

Abstract: A quantum electronic device comprising: a substrate coated with at least one semiconductor block, insulation zones on either side of the semiconductor block, front gate electrodes on regions of the semiconductor block each forming a quantum dot, one or more exchange electrodes arranged around and at a distance from the semiconductor block, at least one first exchange electrode among the exchange electrodes being provided so as to allow to modulate a tunnel barrier between a first quantum dot and a second quantum dot, this first exchange electrode being formed by a first conductive pad passing through an insulating layer covering the semiconductor block, the insulation zones and the gate electrodes, the first conductive pad having a “lower” end disposed in contact with the first insulation zone.

Abstract: A method is provided for producing a back gate under a semiconductive device surrounded by isolation trenches. The method includes a partial etching of the isolation trenches forming an opening to the sacrificial layer, a selective removal of the sacrificial layer forming a cavity under the device, and a filling of the cavity with a conductive material so as to form the back gate. Advantageously, the formation of the isolation trenches comprises a formation of a sacrificial coating layer at the flanks of the trenches, in contact with the sacrificial layer, before filling with an isolating material, and the partial etching of the trenches comprises a removal of this sacrificial coating layer selectively at the isolating material.

Abstract: An elementary cell for a two-dimensional array of quantum dots, said elementary cell extending along a main plane and including: a plurality of sites occupied by quantum dots capable of confining at least one spin qubit and including at least: a first quantum dot, a second quantum dot adjacent to the first quantum dot in a first direction of the main plane, and a third quantum dot adjacent to the first quantum dot in a second direction of the main plane; and a first blocking site adjacent to the second and third quantum dots, towards which a spin qubit cannot be displaced.

Abstract: A method for manufacturing a quantum electronic circuit includes etching a semiconducting layer so as to obtain: a plurality of pillars; and a qubit layer; oxidising the flank of each pillar; forming coupling rows and coupling columns; and depositing separation layers leaving a contact surface protrude from each pillar.