Patents by Inventor Benoit Corraze

Benoit Corraze has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Electrochemical cells based on intercalation and deintercalation of chalcogen anions
    Publication number: 20240055601
    Abstract: An electroactive material suitable for electrochemical cell electrode wherein the electroactive material includes a chalcogen oligomer that can reversibly deintercalate/reintercalate an anion of the chalcogen, such as La2O2S2, and the electrochemical electrodes and cells containing the electroactive material.
    Type: Application
    Filed: December 24, 2021
    Publication date: February 15, 2024
    Inventors: Laurent CARIO, Shunsuke SASAKI, Stéphane JOBIC, Maria Teresa CALDES, Etienne JANOD, Benoît CORRAZE, Isabelle BRAEMS-ABBASPOUR, Louis-Béni MVELE, Catherine DEUDON
  • Single-component artificial neuron based on Mott insulators, network of artificial neurons and corresponding manufacturing method
    Patent number: 10867237
    Abstract: An artificial neuron includes a single-component electric dipole including a single material which belongs to the class of Mott insulators and is connected to first and second electric electrodes.
    Type: Grant
    Filed: April 24, 2015
    Date of Patent: December 15, 2020
    Assignees: CENTRE NATIONAL DE LA RECHERCHE SCIENTIFIQUE—CNRS, UNIVERSITE DE NANTES, UNIVERSITE PARIS-SUD XI
    Inventors: Laurent Cario, Benoit Corraze, Pablo Stoliar, Julien Tranchant, Etienne Janod, Marie-Paule Besland, Marcelo Rozenberg
  • Use of centrosymmetric Mott insulators in a resistive switched memory for storing data
    Patent number: 9837607
    Abstract: A material belonging to the family of centrosymmetric Mott insulators is used as an active material in a resistively switched memory for storing data. The material is placed between two electrical electrodes, by virtue of which an electric field of a preset value is applied in order to form, by way of an electron avalanche effect, an elementary information cell that has at least two logic states.
    Type: Grant
    Filed: April 10, 2013
    Date of Patent: December 5, 2017
    Assignees: CNRS—CENTRE NATIONAL DE LA RECHERCHE SCIENTIFIQUE, UNIVERSITE DE NANTES
    Inventors: Laurent Cario, Etienne Janod, Benoit Corraze, Marie-Paule Besland, Vincent Guiot
  • SINGLE-COMPONENT ARTIFICIAL NEURON BASED ON MOTT INSULATORS, NETWORK OF ARTIFICIAL NEURONS AND CORRESPONDING MANUFACTURING METHOD
    Publication number: 20170124449
    Abstract: An artificial neuron includes a single-component electric dipole including a single material which belongs to the class of Mott insulators and is connected to first and second electric electrodes.
    Type: Application
    Filed: April 24, 2015
    Publication date: May 4, 2017
    Applicant: Centre National de la Recherche Scientifique- CNRS
    Inventors: Laurent Cario, Benoit Corraze, Pablo Stoliar, Julien Tranchant, Etienne Janod, Marie-Paule Besland, Marcelo Rozenberg
  • Method for preparing a thin film of thiospinels
    Patent number: 9249495
    Abstract: The invention relates to a method for preparing a thin film of at least one compound of formula AM4X8, where: A is Ga or Ge; M is V, Nb, Ta or Mo; and X is S or Se. Said method includes the following steps: i) a step of forming a thin film of at least one compound of formula AM4X8 by the magnetron spraying of a target including at least one compound of said formula AM4X8, in an atmosphere including at least one inert gas; and ii) a step of annealing the thin film formed during step i) by heat treating; wherein step i) and/or step ii) are carried out in the presence of sulphur when X is S or in the presence of selenium when X is Se.
    Type: Grant
    Filed: March 17, 2010
    Date of Patent: February 2, 2016
    Assignee: CENTRE NATIONAL DE LA RECHERCHE SCIENTIFIQUE
    Inventors: Marie-Paule Besland, Emeline Souchier, Laurent Carlo, Benoit Corraze, Etienne Janod, Julie Martial
  • Use of Centrosymmetric Mott Insulators in a Resistive Switched Memory for Storing Data
    Publication number: 20150255714
    Abstract: A material belonging to the family of centrosymmetric Mott insulators is used as an active material in a resistively switched memory for storing data. The material is placed between two electrical electrodes, by virtue of which an electric field of a preset value is applied in order to form, by way of an electron avalanche effect, an elementary information cell that has at least two logic states.
    Type: Application
    Filed: April 10, 2013
    Publication date: September 10, 2015
    Inventors: Laurent Cario, Etienne Janod, Benoit Corraze, Marie-Paule Besland, Vincent Guiot
  • Use of lacunar spinels with tetrahedral aggregates of a transition element of the AMxtype with an electronic data rewritable non volatile memory, and corresponding material
    Patent number: 8305794
    Abstract: The invention relates to the use of a material that belongs to the class of lacunar spinels with tetrahedral aggregates of an AM4X8 transition element as the active material for an electronic data non-volatile memory, in which: A includes at least one of the following elements: Ga, Ge, Zn; M includes at least one of the following elements: V, Nb, Ta, Mo; and X includes at least one of the following elements: S, Se.
    Type: Grant
    Filed: March 12, 2008
    Date of Patent: November 6, 2012
    Assignee: Universite De Nantes
    Inventors: Laurent Cario, Benoit Corraze, Etienne Janod, George Christian Vaju, Marie-Paule Besland
  • METHOD FOR PREPARING A THIN FILM OF THIOSPINELS
    Publication number: 20120058283
    Abstract: The invention relates to a method for preparing a thin film of at least one compound of formula AM4X8, where: A is Ga or Ge; M is V, Nb, Ta or Mo; and X is S or Se. Said method includes the following steps: i) a step of forming a thin film of at least one compound of formula AM4X8 by the magnetron spraying of a target including at least one compound of said formula AM4X8, in an atmosphere including at least one inert gas; and ii) a step of annealing the thin film formed during step i) by heat treating; wherein step i) and/or step ii) are carried out in the presence of sulphur when X is S or in the presence of selenium when X is Se.
    Type: Application
    Filed: March 17, 2010
    Publication date: March 8, 2012
    Inventors: Marie-Paule Besland, Emeline Souchier, Laurent Cario, Benoit Corraze, Etienne Janod, Julie Martial
  • USE OF LACUNAR SPINELS WITH TETRAHEDRAL AGGREGATES OF A TRANSITION ELEMENT OF THE AM4X8 TYPE WITH AN ELECTRONIC DATA REWRITABLE NON VOLATILE MEMORY, AND CORRESPONDING MATERIAL
    Publication number: 20100133494
    Abstract: The invention relates to the use of a material that belongs to the class of lacunar spinels with tetrahedral aggregates of an AM4X8 transition element as the active material for an electronic data non-volatile memory, in which: A comprises at least one of the following elements: Ga, Ge, Zn; M comprises at least one of the following elements: V, Nb, Ta, Mo; and X comprises at least one of the following elements: S, Se.
    Type: Application
    Filed: March 12, 2008
    Publication date: June 3, 2010
    Inventors: Laurent Cario, Benoit Corraze, Etienne Janod, George Christian Valu, Marie-Paule Besland