Abstract: An image device has an array of pixels, each pixel having a photosensitive area, a first storage node and a second storage node. A pixel is illuminated for a first period of time, and charge accumulated on the photosensitive area of the pixel during the first period of time is stored on the first storage node of the pixel. The pixel of the array is illuminated for a second period of time, and charge accumulated on the photosensitive area during the second period of time is stored on the second storage node of the pixel. A first signal is generated based on the charge stored on the first storage node, and a second signal is generated based on the charge stored on the second storage node. The first and second signals are combined using at least one subtraction operation having the first and second signals as operands.

Abstract: An image device has an array of pixels, each pixel of the array having a photosensitive area, a first storage node and a second storage node. A pixel of the array is illuminated for a first period of time, and charge accumulated on the photosensitive area of the pixel during the first period of time is stored on the first storage node of the pixel. The pixel of the array is illuminated for a second period of time, and charge accumulated on the photosensitive area during the second period of time is stored on the second storage node of the pixel. A first signal is generated based on the charge stored on the first storage node, and a second signal is generated based on the charge stored on the second storage node. The first and second signals are combined using at least one subtraction operation having the first and second signals as operands.

Abstract: An electronic device disclosed herein includes a photodiode, and a plurality of storage components each configured to independently sample and hold charges from the photodiode during each of a plurality of integration periods without discharging the held charge between successive integration periods of the plurality thereof. Each storage component accumulates the charges from the photodiode for a given time window during each integration period, with the given time window for each storage component being different than the given time window for each other storage component. Readout circuitry is configured to transfer the charges from each storage component to a readout node in a respective read period for that storage component. The photodiodes and storage components are not configured to be reset between successive time windows during each integration period.

Abstract: The present disclosure relates to an image sensor including: a plurality of pixels, each including a first photodiode coupled to a first capacitive charge storage node by a first transistor, and a second photodiode coupled to a second capacitive charge storage node by a second transistor; and a control circuit configured so as to, during a phase of acquisition of a value representative of the illumination level of a pixel: acquire a first output value representative of the illumination level received by the first photodiode during a first uninterrupted integration period; and acquire a second output value representative of the illumination level received by the second photodiode during a second integration period divided into a plurality of separate sub-periods.

Abstract: An imaging device includes at least one photosite formed in a semiconducting substrate and fitted with a filtering device for filtering at least one undesired radiation. The filtering device is buried in the semiconducting substrate at a depth depending on the wavelength of the undesired radiation.

Abstract: An electronic device disclosed herein includes a photodiode, and a plurality of storage components each configured to independently sample and hold charges from the photodiode during each of a plurality of integration periods without discharging the held charge between successive integration periods of the plurality thereof. Each storage component accumulates the charges from the photodiode for a given time window during each integration period, with the given time window for each storage component being different than the given time window for each other storage component. Readout circuitry is configured to transfer the charges from each storage component to a readout node in a respective read period for that storage component. The photodiodes and storage components are not configured to be reset between successive time windows during each integration period.

Abstract: The present disclosure relates to an image sensor including: a plurality of pixels, each including a first photodiode coupled to a first capacitive charge storage node by a first transistor, and a second photodiode coupled to a second capacitive charge storage node by a second transistor; and a control circuit configured so as to, during a phase of acquisition of a value representative of the illumination level of a pixel: acquire a first output value representative of the illumination level received by the first photodiode during a first uninterrupted integration period; and acquire a second output value representative of the illumination level received by the second photodiode during a second integration period divided into a plurality of separate sub-periods.

Abstract: The disclosure relates to a process of controlling a pixel cell of an image sensor of the CMOS type, comprising the steps of: initializing a sense node and a read node of the pixel cell; partially transferring electrical charges accumulated at the sense node to the read node; completely evacuating electrical charges accumulated at the read node; partially transferring electrical charges accumulated at the sense node to the read node; measuring the electrical charges accumulated at the read node to obtain a pixel signal corresponding to a quantity of electrical charges accumulated during a short integration period; completely transferring electrical charges accumulated at the sense node to the read node, without a prior initialization of the read node, and measuring the electrical charges at the read node to obtain a pixel voltage corresponding thus to the sum of the electrical charges accumulated during the short and long integration periods.

Abstract: A bit for drilling wells has a front face with radial blades having cutting elements distributed around the front face. A space for forming a core is situated at the center of the front face. A cavity is provided for evacuating the core towards a periphery of the bit. At least a portion of the cavity is situated between adjacent blades. The cavity is delimited by two lateral surfaces and a clearance surface set back with respect to the front face, and the cavity is open in a direction opposite the clearance surface. The bit may be used in methods for drilling wells and makes it possible to rapidly drill wells of great depth in all types of rock without the risk of clogging.

Abstract: A method for controlling a pixel including at least one photodiode capable of being connected to a sense node, the method including the steps of: a) at the beginning and at the end of a first integration period included within a second integration period, controlling the pixel to transfer the charges stored in the photodiode above a first threshold onto the sense node; and b) at an intermediate time between the beginning of the second period and the beginning of the first period, controlling the pixel to transfer the charges stored in the photodiode above the first threshold onto the sense node.

Abstract: An imaging device includes at least one photosite formed in a semiconducting substrate and fitted with a filtering device for filtering at least one undesired radiation. The filtering device is buried in the semiconducting substrate at a depth depending on the wavelength of the undesired radiation.

Abstract: A bit for drilling wells has a front face with radial blades having cutting elements distributed around the front face. A space for forming a core is situated at the center of the front face. A cavity is provided for evacuating the core towards a periphery of the bit. At least a portion of the cavity is situated between adjacent blades. The cavity is delimited by two lateral surfaces and a clearance surface set back with respect to the front face, and the cavity is open in a direction opposite the clearance surface. The bit may be used in methods for drilling wells and makes it possible to rapidly drill wells of great depth in all types of rock without the risk of clogging.

Abstract: An imaging device includes at least one photosite formed in a semiconducting substrate and fitted with a filtering device for filtering at least one undesired radiation. The filtering device is buried in the semiconducting substrate at a depth depending on the wavelength of the undesired radiation.

Abstract: An imaging device includes a fixed focus lens, an image sensor having an image matrix of a plurality of pixels arranged on a semiconductor substrate and supplying image data, and an electronic circuit for reading the image matrix. The image sensor also includes at least two ambient light sensors arranged on the semiconductor substrate on opposite sides of the image matrix, and configured to capture an ambient light intensity through the fixed lens, and the electronic circuit is also configured to read the two ambient light sensors and to supply ambient light data and the image data.

Abstract: Two-centre rotary boring bit for boring wells, comprising, on the one hand, a pilot tool (1) comprising a body of revolution with an axial core (3) and radial blades (4) bearing cutting elements (5) and, on the other hand, an enlarging tool (2) fitted behind the pilot tool and laterally offset therefrom, the pilot tool having, on its front face, a central region (11) that has no cutting elements in order to allow the creation of a core sample (12), said central region being in communication with a cavity (13) situated between two blades (4) of the pilot tool (1) and serving to remove the core sample toward the periphery of the boring bit.

Abstract: A method of analog to digital voltage conversion including: generating a quadratic signal based on an analog time varying reference signal; generating a ramp signal based on the quadratic signal; and converting an analog input voltage to a digital output value based on a time duration determined by a comparison of the analog input voltage with the ramp signal.

Abstract: A method for controlling a pixel including at least one photodiode capable of being connected to a sense node, the method including the steps of: a) at the beginning and at the end of a first integration period included within a second integration period, controlling the pixel to transfer the charges stored in the photodiode above a first threshold onto the sense node; and b) at an intermediate time between the beginning of the second period and the beginning of the first period, controlling the pixel to transfer the charges stored in the photodiode above the first threshold onto the sense node.

Abstract: A method of reading voltages from an image sensor having an array of pixels, each pixel having at least one photodiode connectable to a storage node, the method having: controlling each pixel in a row of pixels to transfer charge accumulated in the photodiode above a first threshold to the storage node at the start and end of a first integration period and reading a first voltage at the storage node of each pixel in the row at the end of the first integration period; controlling of the pixels in the row to transfer charge accumulated in the photodiode above a second threshold to the storage node at the start and end of a second integration period longer than the first integration period, and reading a second voltage value at the storage node of each pixel in the row at the end of the second integration period; controlling each pixel in a row of pixels to transfer charge accumulated in the photodiode to the storage node at the end of a third integration period longer than the first and second integration perio

Abstract: An imaging device includes a fixed focused lens, an image sensor having a image matrix of a plurality of pixels arranged on a semiconductor substrate and supplying image data, and electronic means for reading the image matrix. The image sensor also comprises at least two ambient light sensors arranged on the semiconductor substrate on opposite sides of the image matrix, and configured to capture an ambient light intensity through the fixed lens, and the electronic means is also configured to read the two ambient light sensors and to supply ambient light data and the image data.

Abstract: A method for acquiring images using at least one CMOS-type sensor with four transistors including an acquisition node and a read node, where the read node can receive a compression signal, including a step of reading a reference state of the sensor; a reset step; an integration step, during which the sensor is exposed and during part of which the compression signal is applied to the read node; and a step of reading the data acquired during the integration step; the read node being, during the integration step, isolated from the acquisition node, except immediately before the application of the compression signal, at which time the acquisition node is connected to the read node long enough to enable a transfer of the charges present at the acquisition node to the read node.