Abstract: An all-optical spin device is based on spin multistability of trapped microactivity polaritons.

Abstract: Microcavity comprising two reflectors, at least one semiconductor layer separating said reflectors and a semiconductor quantum well wherein at least one of said reflectors and of said at least one semiconductor layer comprises a structure which is adjusted to localize a polariton in said microcavity.

Abstract: Optical parametric oscillator including a semiconductor microcavity being configured to spatially localize polaritons of at least three quantized polariton energy levels to effect an optical parametric oscillation.

Abstract: An optical device for amplifying or emitting an optical beam of given wavelength comprises an optical source (20) in combination with a primary optical device (10) which is a semiconductor optical amplifier (SOA), a gain-clamped semiconductor optical amplifier (GCSOA), a sub-threshold gain-clamped semiconductor optical amplifier (SGCSOA), a laser diode (LD) or a superluminescent LED (SLED). The primary optical device (10) delivers an output signal of given wavelength called the signal beam and optionally receives an input beam at the same wavelength as the signal beam. Operation of the primary optical device (10) is assisted by a holding beam supplied by the optical source (20). The holding beam is of smaller wavelength than the signal beam, the holding beam wavelength being tuned close to the transparency wavelength of the primary optical device to provide a holding beam at transparency (HBAT) mode.

Abstract: Optical parametric oscillator including a semiconductor microcavity being configured to spatially localize polaritons of at least three quantized polariton energy levels to effect an optical parametric oscillation.

Abstract: Microcavity comprising two reflectors, at least one semiconductor layer separating said reflectors and a semiconductor quantum well wherein at least one of said reflectors and of said at least one semiconductor layer comprises a structure which is adjusted to localize a polariton in said microcavity.

Abstract: A photorefractive device intended to be exposed to a marking radiation which is provided so as to create a grating of interference fringes in the device and to a reading radiation diffracted by the created grating. The device includes an electro-optical material having a quantum well structure (24) and formed in an intrinsic semi-conductor matrix (22, 24) and, on both sides of the material in the semi-conductor matrix, suitable means (28, 30) to trap, both parallel to the axis of the structure and perpendicular to this axis, free carriers generated by the marking radiation.

Abstract: An optical operator designed to be subjected to write radiation for processing read radiation that it receives, the operator comprising an electro-optical material (Q2), first and second materials (Q1, Q3) distributed on either side of the electro-optical material (Q2), said first and second materials (Q1, Q3) being collection quantum wells. Quantum barrier forming materials (6, 8) are interposed between said two materials (Q1, Q3) and the electro-optical material (Q2), with one of the quantum barrier forming materials (6) constituting a filter such that charges of a certain sign photoexcited by the write radiation in a material (4, Q1) on one side of said filter pass through it in the absence of an external electric field to relax in the collection quantum well (Q3) situated on the other side of the filter (6), while charges of opposite sign are blocked by the filter (6) in the other collection well (Q1).

Abstract: Photoelectric detector presenting a multiple quantum well structure, each quantum well comprising a first barrier made from a first semiconductor material, a well made from a second semiconductor material, and a second barrier made from a third semiconductor material, each semiconductor material being defined by its chemical composition, and the electric conductibility in the detector being ensured by propagation, from the first barrier to the second barrier, of given charge carriers in a given electronic band, presenting an energy extremum in each of the said materials.

Abstract: The amplifier according to the invention comprises a shallow, narrow well (P1) in which amplification takes place and a deep, wide well (P2) for collecting the carriers at the end of excitation, said well being emptied by the laser effect.Application to optical telecommunications.