Abstract: A patient support includes a bladder layer with a plurality of bladders, a pneumatic supply system, and a plurality of tubes in fluid communication with pneumatic supply system. The tubes are coupled to and guided by the bladder layer so that the tubes and bladder layer may remain in close registry when being handled, for example, either during the assembly process or cleaning process.

Abstract: A process for fabricating a wafer of thickness, including at least (i) providing a monolithic substrate made of p-doped silicon; (ii) forming crystal defects in predefined portions of at least one of the sides of the substrate; (iii) subjecting the subject to a thermal anneal; (iv) bringing all or some of one of the sides of the substrate into contact with hydrogen; (v) if necessary, promoting the diffusion of the hydrogen; and (vi) subjecting the substrate to a heat treatment.

Abstract: A patient support includes a bladder layer with a plurality of bladders, a pneumatic supply system, and a plurality of tubes in fluid communication with pneumatic supply system. The tubes are coupled to and guided by the bladder layer so that the tubes and bladder layer may remain in close registry when being handled, for example, either during the assembly process or cleaning process.

Abstract: A patient support for supporting a patient includes an inflatable mattress having at least one bladder forming at least part of a patient support surface, a pneumatic system for inflating the inflatable mattress, and a control system. The control system including at least one sensor, which includes an emitter and a receiver, with the emitter directing light into the bladder. The receiver receives a reflection from the light directed into the bladder, and the control system detects the immersion of a patient into the mattress based on the reflection received by the receiver.

Abstract: The concentrations of three acceptor and donor dopants of a semiconductor sample are determined by solving a system of three equations. A first equation is obtained by measuring the free charge carrier concentration of the sample at low temperature, and in then confronting these measurements with a mathematical model suitable for these temperatures. A second equation is obtained by measuring a mobility of the majority charge carriers and comparing it with its mathematical expression. A third equation between the dopant concentrations is established knowing the activation energy of the shallower majority dopant in the bandgap of the semiconductor material. When the activation energy of this majority dopant is equal to its maximum value, this third equation is derived from the electro-neutrality of the silicon at ambient temperature. When, the activation energy differs from its maximum value, the concentration of this majority dopant can be deduced directly from its activation energy.