Patents by Inventor Benoit Ramadout

Benoit Ramadout has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 8193479
    Abstract: An image sensor formed in a semiconductor stack of a lower region of a first conductivity type and of an upper region of a second conductivity type, including: a photodiode formed of a first portion of the stack; a read area formed of a second portion of the stack; a trench with insulated walls filled with a conductive material, the trench surrounding the photodiode and the read area and being interrupted, all along its height, on a portion facing the photodiode and the read area; and first connection mechanism associated with the conductive material of the trench and capable of being connected to a reference bias voltage.
    Type: Grant
    Filed: April 24, 2009
    Date of Patent: June 5, 2012
    Assignee: STMicroelectronics (Crolles 2) SAS
    Inventors: François Roy, Benoît Ramadout
  • Publication number: 20090266973
    Abstract: An image sensor formed in a semiconductor stack of a lower region of a first conductivity type and of an upper region of a second conductivity type, including: a photodiode formed of a first portion of the stack; a read area formed of a second portion of the stack; a trench with insulated walls filled with a conductive material, the trench surrounding the photodiode and the read area and being interrupted, all along its height, on a portion facing the photodiode and the read area; and first connection mechanism associated with the conductive material of the trench and capable of being connected to a reference bias voltage.
    Type: Application
    Filed: April 24, 2009
    Publication date: October 29, 2009
    Applicant: STMicroelectronics Crolles 2 SAS
    Inventors: Francois Roy, Benoit Ramadout