Abstract: An optoelectronic device with a very low series resistance has a III-V substrate, a lower, n-doped III-V material semiconducting confinement layer placed on the substrate, an active zone having at least one active, not intentionally doped III-V material semiconducting layer placed on the lower confinement layer, an upper, p-doped III-V material semiconducting confinement layer covering said active zone, the forbidden energy band of the active layer being lower than that of the confinement layers. Two metal coatings are placed on two opposite faces of the device and there is a highly n-doped, quaternary III-V material semiconducting layer for stopping the diffusion of doping ions from the upper confinement layer and placed between the active layer and the upper confinement layer, said stopping layer having a thickness smaller than that of the active layer and also forming part of the active zone.