Abstract: The invention relates to the production of a stacked structure of planes of islands of a first semiconducting material encapsulated in a second semiconducting material on a substrate, comprising alternate deposition of planes of islands of a first semiconducting material and encapsulation layers of a second semiconducting material, the planes of islands of the first semiconducting material being made at an optimum growth temperature and at an optimum precursor gas partial pressure to result in a stacked structure for which the optical properties enable production of optoelectronic components to optically interconnect integrated circuits.

Abstract: A silicon-based single-crystal portion is produced on a substrate selectively in a zone where a single-crystal material is initially exposed. The portion is produced outside other surface zones where the surface of the substrate is made of insulating material. The single-crystal portion is formed from a gas mixture including a silicon precursor of the non-chlorinated hydride type, hydrogen chloride and a carrier gas. The process makes it possible to reduce the temperature at which the substrate has to be heated in order to form the single-crystal portion by selective epitaxial growth.

Abstract: The invention relates to the product ion of a stacked structure of planes of islands of a first semiconducting material encapsulated in a second semiconducting material on a substrate, comprising alternate deposition of planes of islands of a first semiconducting material and encapsulation layers of a second semiconducting material, the planes of islands of the first semiconducting material being made at an optimum growth temperature and at an optimum precursor gas partial pressure to result in a stacked structure for which the optical properties enable production of optoelectronic components to optically interconnect integrated circuits.