Abstract: Consistent with an example embodiment, there is a method for sawing a wafer substrate, the wafer substrate having a front-side surface containing active devices separated by saw lanes and a back-side surface having undergone back grinding, the saw lanes having process control monitor (PCM) devices present therein. The method comprises: with a blade of a first kerf, sawing the back-side surface in tracks corresponding to the saw lanes, to a first depth; laser grooving (LG) the saw lanes, to an LG depth, on the front-side surface of the wafer substrate until PCM devices are substantially removed, the LG having a preset beam diameter; and with a blade of a second kerf, the second kerf less than the first kerf, sawing the front-side surface of the wafer substrate about the center of the saw lanes until the active devices are separated from one another.