Abstract: A process for producing a substrate with electrode for an organic electroluminescent device comprising a low-refractive index layer, a functional layer, and a transparent electrode that are laminated in this order, the substrate being for an organic electroluminescent device wherein the refractive index n1 of the electrode, the refractive index n2 of the functional layer, and the refractive index n3 of the low-refractive index layer satisfy the following formula (1): { 0.3 ? ( n ? ? 1 - n ? ? 2 ) ? 0 n ? ? 1 ? n ? ? 2 > n ? ? 3 ( 1 ) , the process comprising the step of forming the low-refractive index layer by forming raised and depressed portions on the surface of the low-refractive index layer by means of imprinting that uses a mold wherein multiple particles having an average particle size of 1.

Abstract: A method of forming an array of selectively shaped optical elements on a substrate, the method including the steps of providing the substrate, the substrate having an optical layer placed thereon; placing a layer of particles on the optical layer; performing an etching cycle. The cycle includes the steps of: etching the layer of particles, using a first etching process so as to reduce the size of the particles within the layer, then; simultaneously etching the optical layer and the layer of particles, using a second etching process, the further reducing particles forming a mask over areas of the optical layer to create discrete optical elements from the optical layer.

Abstract: A method of forming an array of selectively shaped optical elements on a substrate, the method including the steps of providing the substrate, the substrate having an optical layer placed thereon; placing a layer of particles on the optical layer; performing an etching cycle. The cycle includes the steps of: etching the layer of particles, using a first etching process so as to reduce the size of the particles within the layer, then; simultaneously etching the optical layer and the layer of particles, using a second etching process, the further reducing particles forming a mask over areas of the optical layer to create discrete optical elements from the optical layer.

Abstract: A method of forming an array of selectively shaped optical elements on a substrate, the method including the steps of providing the substrate, the substrate having an optical layer placed thereon; placing a layer of particles on the optical layer; performing an etching cycle. The cycle includes the steps of: etching the layer of particles, using a first etching process so as to reduce the size of the particles within the layer, then; simultaneously etching the optical layer and the layer of particles, using a second etching process, the further reducing particles forming a mask over areas of the optical layer to create discrete optical elements from the optical layer.

Abstract: A method for fabricating an array of semiconductor devices comprising the steps of providing a non-metallic substrate, placing a layer of spheres on said substrate, reducing diameter of the spheres, encapsulating the spheres in a matrix of rigid material, finishing an upper surface of said matrix to expose a portion of said spheres, removing the spheres to form an array of cavities within said matrix, and forming features in said cavities in contact with said substrate so as to form the device.

Abstract: A method for fabricating an array of semiconductor devices comprising the steps of providing a non-metallic substrate, placing a layer of spheres on said substrate, reducing diameter of the spheres, encapsulating the spheres in a matrix of rigid material, finishing an upper surface of said matrix to expose a portion of said spheres, removing the spheres to form an array of cavities within said matrix, and forming features in said cavities in contact with said substrate so as to form the device.

Abstract: A method of fabricating a two dimensional nano-structure array of features comprising the steps of providing a substrate (10); forming an intermediate layer on said substrate (20), said intermediate layer having at least two selectively located regions (21, 22) of different uniform thickness; placing at least one layer of elements (30) over said intermediate layer, said elements placed in a close-packed arrangement forming an array of voids (33) between said elements; etching the intermediate layer through said voids, and so forming the array of features (51, 52) in said intermediate layer corresponding to the voids.

Abstract: A method of forming an array of selectively shaped optical elements on a substrate, the method including the steps of providing the substrate, the substrate having an optical layer placed thereon; placing a layer of particles on the optical layer; performing an etching cycle. The cycle includes the steps of: etching the layer of particles, using a first etching process so as to reduce the size of the particles within the layer, then; simultaneously etching the optical layer and the layer of particles, using a second etching process, the further reducing particles forming a mask over areas of the optical layer to create discrete optical elements from the optical layer.

Abstract: A method of fabricating a two dimensional nano-structure array of features comprising the steps of providing a substrate (10); forming an intermediate layer on said substrate (20), said intermediate layer having at least two selectively located regions (21, 22) of different uniform thickness; placing at least one layer of elements (30) over said intermediate layer, said elements placed in a close-packed arrangement forming an array of voids (33) between said elements; etching the intermediate layer through said voids, and so forming the array of features (51, 52) in said intermediate layer corresponding to the voids.

Abstract: A method for the production of a semiconductor structure having self-organized quantum wires is described. The process includes the formation of multi-atomic steps on a (001) oriented semiconductor substrate inclined at an angle toward the [110] direction. Quantum wires are then spontaneously formed in situ along edges of the multi-atomic steps during epitaxial growth of a semiconductor with a larger or smaller lattice constant than the substrate but with a band gap narrower than that of the underlying material. Further deposition of a layer of semiconductor with a lattice constant within 1% of the substrate but with a band gap wider than that of the wire material then buries the quantum wires between this layer and the substrate layers. These layers are free of defects.

Abstract: A method for the production of a semiconductor structure having self-organized quantum wires is described. The process includes the formation of multi-atomic steps on a (001) oriented semiconductor substrate inclined at an angle toward the [110] direction. Quantum wires are then spontaneously formed in situ along edges of the multi-atomic steps during epitaxial growth of a semiconductor with a larger or smaller lattice constant than the substrate but with a band gap narrower than that of the underlying material. Further deposition of a layer of semiconductor with a lattice constant within 1% of the substrate but with a band gap wider than that of the wire material then buries the quantum wires between this layer and the substrate layers. These layers are free of defects.