Abstract: An integrated circuit (IC) device includes: a fin-type active area protruding from a substrate and extending in a first horizontal direction; a first nanosheet disposed above an upper surface of the fin-type active area with a first separation space therebetween; a second nanosheet disposed above the first nanosheet with a second separation space therebetween; a gate line extending on the substrate in a second horizontal direction intersecting the first horizontal direction, at least a portion of the gate line being disposed in the second separation space; and a bottom insulation structure disposed in the first separation space.

Abstract: The present invention provides a hybrid gasification system which simultaneously has the advantages of an entrained-flow gasifier using pulverized fuel and a fluidized-bed gasifier utilized for gasifying fuel with relatively various properties. The present intention provides a hybrid gasification system employing a structure in which a second reaction chamber operated at a temperature of 700 to 900 is surrounded by a first reaction chamber operated at temperature, thereby obtaining an insulation effect, performing additional heat exchange, and minimizing a heat loss. Furthermore, the present invention provides a hybrid gasification system having a structure in which unreacted substances and tar within synthetic gas generated from a first reaction chamber reacts within a second reaction chamber, thereby increasing the entire gasification efficiency.

Abstract: The present invention provides a hybrid gasification system which simultaneously has the advantages of an entrained-flow gasifier using pulverized fuel and a fluidized-bed gasifier utilized for gasifying fuel with relatively various properties. The present intention provides a hybrid gasification system employing a structure in which a second reaction chamber operated at a temperature of 700 to 900 is surrounded by a first reaction chamber operated at temperature, thereby obtaining an insulation effect, performing additional heat exchange, and minimizing a heat loss. Furthermore, the present invention provides a hybrid gasification system having a structure in which unreacted substances and tar within synthetic gas generated from a first reaction chamber reacts within a second reaction chamber, thereby increasing the entire gasification efficiency.

Abstract: Provided are methods of fabricating capacitors of semiconductor devices, the methods including: forming a lower electrode on a semiconductor substrate, performing a pre-process operation on the lower electrode for suppressing deterioration of the lower electrode during a process, forming a dielectric layer on the lower electrode using a source gas and an ozone gas, and forming an upper electrode on the dielectric layer, wherein the pre-process operation and the forming of the dielectric layer may be performed in one device capable of atomic layer deposition.

Abstract: Provided are methods of fabricating capacitors of semiconductor devices, the methods including: forming a lower electrode on a semiconductor substrate, performing a pre-process operation on the lower electrode for suppressing deterioration of the lower electrode during a process, forming a dielectric layer on the lower electrode using a source gas and an ozone gas, and forming an upper electrode on the dielectric layer, wherein the pre-process operation and the forming of the dielectric layer may be performed in one device capable of atomic layer deposition.