Patents by Inventor Beom Ki Shin

Beom Ki Shin has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Method for manufacturing anti-reflective coating for solar cell having moth-eye structure and solar cell incliding the same
    Patent number: 9653625
    Abstract: A method of manufacturing antireflective coating for solar cell having a moth-eye structure and a solar cell including the same are provided to greatly reduce reflectivity by forming an antireflective coating layer having a moth-eye structure on an upper electrode layer of the solar cell using a bottom-up method. A bottom electrode layer is formed on a substrate. A photoreactive layer is formed on the bottom electrode layer. The photoreactive layer is made of CIS (Copper, Indium, Selenide) materials. A buffer layer is formed on the photoreactive layer. A ZnO layer is formed on the buffer layer. A top electrode layer is formed on the ZnO layer.
    Type: Grant
    Filed: December 15, 2011
    Date of Patent: May 16, 2017
    Assignee: INDUSTRY-ACADEMIC COOPERATION FOUNDATION, YONSEI UNIVERSITY
    Inventors: Jae Min Myoung, Beom Ki Shin, Tae Il Lee
  • METHOD FOR MANUFACTURING ANTI-REFLECTIVE COATING FOR SOLAR CELL HAVING MOTH-EYE STRUCTURE AND SOLAR CELL INCLIDING THE SAME
    Publication number: 20140166101
    Abstract: A method of manufacturing antireflective coating for solar cell having a moth-eye structure and a solar cell including the same are provided to greatly reduce reflectivity by forming an antireflective coating layer having a moth-eye structure on an upper electrode layer of the solar cell using a bottom-up method. A bottom electrode layer is formed on a substrate. A photoreactive layer is formed on the bottom electrode layer. The photoreactive layer is made of CIS (Copper, Indium, Selenide) materials. A buffer layer is formed on the photoreactive layer. A ZnO layer is formed on the buffer layer. A top electrode layer is formed on the ZnO layer.
    Type: Application
    Filed: December 15, 2011
    Publication date: June 19, 2014
    Applicant: Industry-Academic Corporation Foundation, Yonsei University
    Inventors: Jae Min Myoung, Beom Ki Shin, Tae II Lee